Method for preparing Bi2S3 quantum dot sensitized TiO2 membrane electrodes

A technology of quantum dot sensitization and thin film electrode, applied in photosensitive devices, capacitor electrodes, circuits, etc., can solve problems such as easy explosion and human body poisoning, and achieve the effect of not easy to explode, non-toxic explosion

Inactive Publication Date: 2009-08-26
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The present invention prepares Bi in order to solve prior art 2 S 3 Quantum dot sensitized TiO 2 Thin film electrodes are used in the process of H 2 S gas, which is poisonous to the human body and prone to explosion, provides a Bi 2 S 3 Quantum dot sensitized TiO 2 Preparation method of thin film electrode

Method used

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specific Embodiment approach 1

[0009] Specific implementation mode one: this implementation mode Bi 2 S 3 Quantum dot sensitized TiO 2 The preparation method of thin film electrode is realized according to the following steps: One, adopt sol-gel method to prepare porous TiO 2 Thin film electrode; Two, the porous TiO obtained in step one 2 Thin film electrode is immersed in the ethanol solution of 1~10g mercaptoacetic acid for 10~60min; 3 ) 3 In the solution for 1-10 minutes, rinse with distilled water after taking it out, and then immerse in Na 2 S solution for 1 to 10 minutes, then rinse with distilled water after taking it out; 4. Repeat step 3 5 times to get Bi 2 S 3 Quantum dot sensitized TiO 2 Thin film electrode; wherein in the ethanol solution of mercaptoacetic acid in step 2, the volume ratio of mercaptoacetic acid and ethanol is 1: 10~70; Bi(NO 3 ) 3 The solution consists of 1~20g Bi(NO 3 ) 3 ·5H 2 O and 10~100ml nitric acid solution are formulated, and the volume ratio of nitric acid a...

specific Embodiment approach 2

[0012] Specific embodiment 2: The difference between this embodiment and specific embodiment 1 is that the porous TiO in step 2 2 The film electrode is immersed in the ethanol solution of 2-8g mercaptoacetic acid. Others are the same as in the first embodiment.

specific Embodiment approach 3

[0013] Specific embodiment three: the difference between this embodiment and specific embodiment one is that the porous TiO in step two 2 The thin-film electrode was immersed in a solution of 1 g of mercaptoacetic acid in ethanol. Others are the same as in the first embodiment.

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Abstract

A method for preparing Bi2S3 quantum dot sensitized TiO2 membrane electrodes relates to a method for preparing quantum dot sensitized TiO2 membrane electrodes The invention solves the problem that the H2S gas which is adopted during the process for preparing the Bi2S3 quantum dot sensitized TiO2 membrane electrodes is explosive and harmful to human bodies in the prior art. The method comprises the following steps: preparing a porous TiO2 membrane electrode; soaking the porous membrane electrode into the ethanol solution of ethyl thioglycollic acid; and alternately soaking the porous membrane electrode in Bi(NO3)3 solution and Na2S solution to obtain the TiO2 membrane electrodes. The TiO2 membrane electrodes prepared by the method of the invention has the advantages that the Bi2S3 quantum dots compounded on the surface thereof are numerous and evenly distributed, and the photoelectric conversion efficiency is as high as 1.10% to 1.22%; the preparation process of the method dispenses with the H2S gas, the method is not harmful to human bodies or not easy to explode, thereby ensuring the environment friendliness; furthermore, the method of the invention is easy to operate.

Description

technical field [0001] The invention relates to a quantum dot sensitized TiO 2 Preparation method of thin film electrode. Background technique [0002] TiO 2 The thin-film electrode has a wide band gap (Eg=3.2eV), and can only show photochemical activity in the ultraviolet region (λ≤380nm), so the utilization of solar energy is less than 10%. In order to improve the TiO 2 To improve the photoelectric efficiency of thin film electrodes, it is often modified by noble metal surface deposition, semiconductor coupling and metal ion doping and other modification methods. Among them, semiconductor coupling is to improve the TiO 2 One of the effective means of photoelectric conversion efficiency of thin film electrodes. When the semiconductor grain size is about 10nm, it is called quantum dot. The semiconductor quantum dot structure has a strong three-dimensional quantum confinement effect on the carriers (such as electrons, holes, and excitons). Controlling the geometry and s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G9/04H01G9/20H01M14/00H01L51/48
CPCY02E10/50Y02E10/549
Inventor 吴晓宏秦伟韩璐
Owner HARBIN INST OF TECH
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