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Material filming device, preparation method and organic electroluminescence component prepared by same

A film-forming device and luminescent technology, applied in the direction of electroluminescent light source, electric light source, electrical components, etc., can solve the problems of affecting production efficiency, unsolvable problems, slow evaporation rate, etc., to increase the bonding force of the film layer, Improve device yield and improve damage effect

Active Publication Date: 2009-12-02
SUZHOU QUINGYUE OPTOELECTRONICS TECH CO LTD +1
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if only one of the above two processes is used, some problems cannot be solved due to some characteristics of the process.
A single electron beam process will produce some large metal particles during the preparation of the cathode film of OLED devices, resulting in performance defects of OLED devices and waste products
The single resistance heating process will affect the production efficiency because of its slow evaporation rate, and the bonding force of the film layer is not good

Method used

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  • Material filming device, preparation method and organic electroluminescence component prepared by same
  • Material filming device, preparation method and organic electroluminescence component prepared by same
  • Material filming device, preparation method and organic electroluminescence component prepared by same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] refer to figure 1 , 2 , 3.

[0047] This embodiment is to prepare organic electroluminescence device, and its device structure is:

[0048] Glass substrate / ITO / NPB(50nm) / Alq 3 (70nm) / Al(300nm)

[0049] (1) Preparation of organic light-emitting layer

[0050] Place the pretreated glass substrate 11 in the vacuum chamber 1, and evacuate to 1×10 -3 Pa, the evaporation hole transport material NPB, the evaporation rate of the material film is 0.1nm / s, and the film thickness is 50nm; on the hole transport layer 22, evaporate 70nm thick Alq 3 As the light-emitting layer and electron transport layer 23 of the device;

[0051] Wherein the glass substrate 11 is composed of an ITO 21 (indium tin oxide) film and a substrate, the sheet resistance of the ITO film 21 is 50Ω, and the film thickness is 150nm.

[0052] (2) Preparation of cathode layer

[0053]The evaporation chamber 1 used to prepare this layer is the aforementioned chamber, and the cathode 25 with a film thickne...

Embodiment 2

[0070] refer to figure 1 , 2 , 3.

[0071] This embodiment is to prepare organic electroluminescent devices with different cathode materials, and its device structure is:

[0072] Glass substrate / ITO / NPB(50nm) / Alq 3 (70nm) / Mg(50nm) / Al(250nm)

[0073] (1) Preparation of organic light-emitting layer

[0074] Place the pretreated glass substrate 11 in the vacuum chamber 1, and evacuate to 1×10 -3 Pa, the evaporation hole transport material NPB, the evaporation rate of the material film is 0.1nm / s, and the film thickness is 50nm; on the hole transport layer 22, evaporate 70nm thick Alq 3 As the light-emitting layer and electron transport layer 23 of the device;

[0075] Wherein the glass substrate 11 is composed of an ITO 21 (indium tin oxide) film and a substrate, the sheet resistance of the ITO film 21 is 50Ω, and the film thickness is 150nm.

[0076] (2) Preparation of cathode layer

[0077] The evaporation chamber 1 used to prepare this layer is the aforementioned cham...

Embodiment 3

[0081] refer to figure 2 , 3 , 4.

[0082] This embodiment is to prepare organic electroluminescence device, and its device structure is:

[0083] Glass substrate / ITO / NPB(50nm) / Alq 3 (70nm) / Al(300nm)

[0084] The difference between the preparation device of this embodiment and the evaporation equipment used in Examples 1 and 2 is that a magnetron sputtering source 7-3 is also provided in the evaporation chamber, and two types of the three types of coating sources are used in the cathode of this embodiment— — Resistance heating evaporation source 7-1 and magnetron sputtering source 7-3.

[0085] (1) Preparation of organic light-emitting layer

[0086] Place the pretreated glass substrate 11 in the vacuum chamber 1, and evacuate to 1×10 -3 Pa, the evaporation hole transport material NPB, the evaporation rate of the material film is 0.1nm / s, and the film thickness is 50nm; on the hole transport layer 22, evaporate 70nm thick Alq 3 As the light-emitting layer and electron ...

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Abstract

The invention discloses a preparation method of thin film by using a material filming device which comprising a vapour plating cavity chamber, wherein, at least two vapour plating sources and a vapour plating base body placement mechanism are arranged in the vapour plating cavity chamber; and at least one of the vapour plating sources is a resistance heating vapour plating source, and at least another one of the vapour plating sources is an electron beam heating vapour plating source. The invention changes the vapour plating sources with single form in the vapour plating cavity chamber into a plurality of vapour plating forms to realize vapour plating together, overcomes the defect of single vapour plating source in the prior art, effectively improves the destroy to an organic layer in the subsequent film layer preparation, especially in the film layer preparation of an organic electroluminescence component, and greatly enhances the qualified rate of the component; and simultaneously, compared with a mode of singly adopting resistance heating vapour plating, the rate is enhanced, and the bonding force of a film layer is increased.

Description

technical field [0001] The invention relates to a material film forming device and a film forming method, in particular to an evaporation material film forming device, a method for preparing a thin film by using the device, and an organic electroluminescent device prepared by using the method. Background technique [0002] As an important means of thin film preparation, vacuum coating technology occupies a special important position in modern microelectronic technology and micro device preparation. This technology refers to the process of depositing substances on the surface of the carrier by physical or chemical means in a vacuum a craft. Vacuum coating technology is generally divided into two categories: one is physical vapor deposition, called PVD; the other is chemical vapor deposition, called CVD. Among them, "Physical Vapor Deposition" is to use physical processes to deposit substances on the surface of a certain carrier. There are many methods, the simplest and most ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/26C23C14/14H05B33/26
Inventor 邱勇张嵩洪瑞高裕弟
Owner SUZHOU QUINGYUE OPTOELECTRONICS TECH CO LTD
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