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Memory cell of resistive random access memory (RRAM) and preparation method thereof

A technology of random access memory and storage unit, applied in electrical components, ion implantation plating, coating and other directions, can solve the problem of less research on resistive random access memory, and achieve the effect of excellent transformation and memory characteristics and good stability

Active Publication Date: 2009-12-09
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Application Information

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Problems solved by technology

There is still less research on other resistive random access memory (RRAM) with resistance switching materials as the intermediate layer.

Method used

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  • Memory cell of resistive random access memory (RRAM) and preparation method thereof
  • Memory cell of resistive random access memory (RRAM) and preparation method thereof
  • Memory cell of resistive random access memory (RRAM) and preparation method thereof

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Embodiment Construction

[0025] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments.

[0026] Such as figure 1 The storage unit of the resistive random access memory shown includes an insulating substrate, the insulating substrate is composed of single crystal silicon and a silicon dioxide isolation dielectric layer grown on the surface of the single crystal silicon, and the first electrode is arranged on the silicon dioxide isolation dielectric layer , the first electrode is made up of platinum with a thickness of 200nm and titanium with a thickness of 50nm; an intermediate layer of a diamond-like carbon film doped with chromium is set on the surface of the first electrode, and the atomic percentage of chromium in the diamond-like carbon film is 1.3%. The thickness of the layer is 130 nm, and a second electrode made of copper is arranged on the surface of the intermediate layer, and the thickness of the second electrode is 200 ...

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Abstract

The invention relates to a memory cell of a resistive random access memory (RRAM) and a preparation method thereof. The memory cell comprises an insulating substrate; a first electrode is arranged on the surface of the insulating substrate; the surface of the first electrode is provided with an intermediate layer manufactured by the materials with resistance switching properties and the surface of the intermediate layer is provided with a second electrode. The memory cell is characterized in that the intermediate layer is formed by diamond-like carbon films. Compared with the prior art, the invention has the advantages that the intermediate layer does not adopt oxide materials but diamond-like carbon films; the RRAM of such a structure shows excellent property of switching from high resistance state to low resistance state and memory property under continuous sweep driving of DC voltage; the difference between the high and low resistance states can be more than 10 times; in the process of continuous 100 times cycling of high and low resistance states, the resistance values of the high and low resistance states show good stability; set voltage and reset voltage show good stability; the properties show that the invention has potential application value in the field of non-volatile memory devices.

Description

technical field [0001] The invention relates to the technical field of non-volatile memory, in particular to a storage unit of a resistance random access memory and a preparation method thereof. Background technique [0002] The current rapid development of digital high-tech has put forward higher requirements for the performance of existing information storage products, such as: high speed, high density, long life, low cost and low power consumption, etc. technical deficiencies. One of the weaknesses of dynamic and static memory is its volatility: information is lost in the event of a power outage, and it is susceptible to interference from electromagnetic radiation. Flash memory has technical obstacles such as slow read and write speeds and low recording density. Therefore, breakthroughs in storage materials and technologies are urgently needed to develop new-generation memory technologies. [0003] In 2000, the University of Houston in the United States discovered in t...

Claims

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Application Information

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IPC IPC(8): H01L45/00C23C14/46C23C14/06
Inventor 李润伟诸葛飞何聪丽汪爱英代伟
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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