Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Memory cell of nitridation titanium/zinc oxide resistor type stochastic memory and preparation method

A zinc oxide resistor, random access memory technology, used in static memory, digital memory information, semiconductor/solid-state device manufacturing, etc., can solve the problems of poor durability, high operating voltage, slow speed, etc., and achieve excellent transformation and memory characteristics, Excellent effect

Inactive Publication Date: 2008-04-16
PEKING UNIV
View PDF0 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, today's mainstream non-volatile memory - flash memory (flash) has problems such as high operating voltage, slow speed, and poor endurance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Memory cell of nitridation titanium/zinc oxide resistor type stochastic memory and preparation method
  • Memory cell of nitridation titanium/zinc oxide resistor type stochastic memory and preparation method
  • Memory cell of nitridation titanium/zinc oxide resistor type stochastic memory and preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] The preferred embodiment of the present invention is described in more detail below with reference to the accompanying drawings of the present invention.

[0028] Referring to Figure 1, SiO was deposited by thermal oxidation and chemical vapor deposition (CVD) 2 The isolation dielectric layer 4 is grown on the single crystal silicon 5 as the substrate, and Pt / Ti (100nm / 20nm) is prepared by the sputtering method as the bottom electrode 3, and then the ZnO thin film 2 is prepared on the bottom electrode by the reactive sputtering method, with a thickness of range (20-40nm), the film is annealed at 450°C, and the annealing is performed in an atmosphere with a nitrogen-to-oxygen ratio of 4 / 1. The structure of the thin film was determined by X-ray diffraction method, and it was found that the ZnO thin film exhibited a hexagonal plumbsite structure and (002) crystal orientation. The TiN top electrode 1 is fabricated on the ZnO thin film by means of sputtering, photolithograp...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

The present invention provides a storage location of a resistance type random access memory and a method for preparing the same, and belongs to the micro-electronics semiconductor technical field. The storage location comprises a substrate and a metal-insulator-metal (MIM) structure resistor; the top electrode of the MIM structure resistor is made of titanium nitride; the insulator is a zinc oxide film. As the invention adopts the titanium nitride / zinc oxide composite structure, the invention appears excellent conversion between a high resistance state and a low resistance state and the memory property in the continuous scanning drive. The invention also further provides the method for preparing the storage location, comprising the following procedures: silicon dioxide or silicon is chose as the substrate material; a bottom electrode is prepared on the substrate by the sputtering method; a zinc oxide film is prepared on the bottom electrode; a titanium nitride film is prepared on the zinc oxide film by the sputtering method; the titanium nitride film is prepared into an electrode pattern by the photoetching and etching method; finally a part structure is prepared by the wet etching method or the dry etching method on the basis of the structure achieved in the previous procedure.

Description

technical field [0001] The invention relates to the technical field of non-volatile memory, in particular to a resistive RAM storage unit with excellent bistable resistance transition and memory characteristics and a preparation method thereof. Background technique [0002] Non-volatile memory has the advantage of maintaining data information even when there is no power supply. It plays a very important role in the field of information storage and is also one of the current research hotspots in information storage technology. However, today's mainstream non-volatile memory - flash memory (flash) has problems such as high operating voltage, slow speed, and poor endurance. RRAM (Resistive Random Access Memory) has shown the advantages of fast working speed, high storage density, long data retention time and strong durability, and is a strong candidate for the next generation of semiconductor memory. The basic memory cell of RRAM consists of a metal-insulator-metal (MIM) struc...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L45/00H01L27/24H01L21/82G11C11/56
Inventor 康晋锋许诺刘力锋孙啸刘晓彦韩德栋王漪韩汝琦王阳元
Owner PEKING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com