Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Exposure mask using gray-tone pattern, manufacturing method of tft substrate using the same and liquid crystal display device having the tft substrate

A technology of gray tone mask and manufacturing method, which is applied in the direction of photolithography exposure device, microlithography exposure equipment, originals for photomechanical processing, etc., and can solve the problem of different methods and effects, distorted resist pattern shape, The narrowing of the width and other issues can achieve the effects of reducing display defects, improving the half-thickness uniformity of the resist, and improving the manufacturing yield

Inactive Publication Date: 2010-01-06
NEC LCD TECH CORP
View PDF5 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, in order to improve the uniformity of the half film thickness, the resist film is applied multiple times, resulting in an increase in the number of steps, which is not good
[0020] On the other hand, in Patent Document 4 (JP-A-2000-066371), in order to prevent distortion of the shape of the formed resist pattern, the width is narrowed toward the center of the light-transmitting portion pattern.
However, this is to obtain a designed rectangular resist pattern by correcting the amount of deformation caused by the expansion and contraction of the resist film in advance, and to obtain a resist pattern with an intermediate film thickness by using a fine pattern below the exposure critical resolution. The purpose, method and effect of the gray tone mask are different
In Patent Document 4, the distortion is corrected for the rectangularization of the contact hole in the planar direction formed over the entire film thickness, and the film thickness variation of the half-thick resist cannot be eliminated.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Exposure mask using gray-tone pattern, manufacturing method of tft substrate using the same and liquid crystal display device having the tft substrate
  • Exposure mask using gray-tone pattern, manufacturing method of tft substrate using the same and liquid crystal display device having the tft substrate
  • Exposure mask using gray-tone pattern, manufacturing method of tft substrate using the same and liquid crystal display device having the tft substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0090] First, on a transparent glass substrate, metal such as Cr, Mo, Al, and their alloys are formed into a film by sputtering, and the gate wiring 1, the gate electrode 1a, and the gate terminal are formed in the first photolithography step. sub (not shown) ( figure 1 (a)). Next, if Figure 3A As shown in the cross-sectional view of the gate electrode 11, the SiNx film 12 constituting the gate insulating film, the a-Si layer 13 constituting the semiconductor layer, and the n-Si layer constituting the ohmic contact layer are stacked on the gate electrode 11 by the CVD method and the sputtering method respectively. + a-Si layer 14, metal layer 15 such as Cr, Mo, Al and their alloys. Next, in a second photolithography step using a gray tone mask, a source electrode, a drain electrode, a drain wiring, a drain terminal (not shown), and an island are sequentially formed.

[0091] This second photolithography step will be described in further detail. In the second photolithogra...

Embodiment approach 2

[0099] The liquid crystal display device is constituted by sandwiching a liquid crystal layer between an active matrix substrate 101 on which a plurality of pixel electrodes are formed and a counter substrate 102 on which counter electrodes are formed. Such as Figure 11 As shown, on the active matrix substrate 101, a plurality of scanning lines 103 (G1 to G9, ...) and a plurality of data lines 104 (D1 to D9, ...) are arranged to cross each other. A plurality of pixel electrodes 105 are arranged in an area surrounded by the line 103 and the plurality of data lines 104 . The scanning line 103 and the data line 104 are connected to the pixel electrode 105 through the pixel Tr as shown in Embodiment Mode 1.

[0100] Further, on the peripheral region P of the active matrix substrate 101, wiring patterns for driving ICs mounted in the COG format or the COF format are arranged. This wiring pattern is a control signal wiring and / or a power supply wiring for the driving IC. The wir...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Disclosed are an exposure mask capable of improving uniformity of a resist film thickness of a half film thickness part and reducing a display defect to increase a manufacturing yield, a method of manufacturing a TFT substrate using the exposure mask and a liquid crystal display comprising the TFT substrate manufactured by the method and having no display defect. The exposure mask includes a light-shielding pattern on a transparent substrate in which a gray-tone area is provided to at least a part of the light-shielding pattern, the gray-tone area having an oblong light-shielding pattern having a width of a submarginal resolution of an exposure apparatus and sandwiched between oblong slit-type transmissive patterns having a width of the submarginal resolution, and a light-shielding rate of the gray-tone area is gradually reduced toward a center of the oblong light-shielding pattern from longitudinal ends thereof.

Description

technical field [0001] The present invention relates to a mask for gray tone exposure, a method of manufacturing an array substrate (TFT substrate) for a liquid crystal display device using the mask, and a liquid crystal display device having a TFT substrate manufactured by the manufacturing method. Among them, in the manufacturing method of an array substrate for a liquid crystal display device in which a source electrode, a drain electrode wiring pattern, and an island pattern of an active region are formed in one photolithography step by using a mask for gray tone exposure, the transistor (hereinafter referred to as "Tr") in the channel region (the region between the source electrode and the drain electrode), the film thickness uniformity of the half-thickness resist improves the manufacturing yield. Background technique [0002] In recent years, liquid crystal display devices have been widely used as high-resolution displays. In a liquid crystal display device, a liquid...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/08G03F1/14H01L21/82G03F1/00G03F1/68G03F7/20H01L21/336H01L29/786
CPCH01L27/1214H01L27/1288G03F1/36G03F1/144G03F1/50
Inventor 樱井洋
Owner NEC LCD TECH CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products