Method for manufacturing back aluminium diffused N type solar cell

Abstract

The invention relates to a method for manufacturing back aluminium diffused N type solar cell. The method includes technological flows of: 1) carrying out chemical treatment on a N type silicon slice and etching on the front; 2) plating a silicon nitride isolation membrane on the back of the N type silicon slice; 3) carrying out phosphor diffusion on the back of the N type silicon slice to form aN+ layer; 4) carrying out edge etching on the N type silicon slice to remove edge conducting layer; 5) removing the silicon nitride isolation membrane; 6) making a silicon nitride anti-reflection coating on the front of the N type silicon slice; 7) making back aluminium diffused P layer and positive and negative electrodes. The invention includes phosphor diffusion doping and aluminium diffusion doping in the process of utilizing conventional P type solar cell device to make N type solar cell, the silicon nitride membrane is plated on the back before phosphor diffusion, so as to prevent phosphor atom from diffusing to silicon, then phosphorosilicate glass is removed while the silicon nitride isolation membrane is removed, so that the invention can produce N type cell without modifying conventional P type solar cell production line and solves the key problem of collineation production of N type cell and P type cell.

Description

Technical field [0001] The present invention relates to a silicon solar cell, in particular to a method for manufacturing an N-type solar cell with back aluminum diffusion. Background technique [0002] Solar energy is an inexhaustible and inexhaustible renewable energy source for human beings. It is a clean energy source. The use of solar energy can effectively reduce environmental pollution. In recent years, silicon solar cells have developed rapidly, and the annual output in China has exceeded 2000MW, of which P-type solar cells are mainly used. Due to the difference in physical properties, N-type silicon wafers are more suitable for manufacturing solar cells than P-type silicon wafers when doped properly. N-type solar cells have anti-attenuation performance that P-type solar cells do not have. With the continuous shortage of silicon wafer raw materials, the development of N-type batteries has become another way to reduce costs. [0003] At present, typical N-type solar cells ...

AI Technical Summary

Problems solved by technology

If N-type cells are manufactured on the original P-type solar cell production line, front-side phosphorous diffusion will have an impact on back-side aluminum diffusion, resulting in a significant drop in cell efficiency

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