CdS buffer layer of film solar battery and preparation method

A thin-film solar cell and buffer layer technology, applied in the field of solar cells

Inactive Publication Date: 2010-02-10
SHENZHEN DANBANG INVESTMENT GROUP
View PDF0 Cites 14 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] Aiming at the existing problems of using single CdS as buffer layer of CIGS thin-...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] The drugs used are analytically pure reagents prepared with deionized water. CdSO with deionized water 4 Prepare 0.02mol / L solution; prepare 1.0mol / L thiourea solution with deionized water; ZnSO 4 Prepared into a 0.02mol / L solution. First mix 100mL of cadmium sulfate solution and 100mL of ammonia water in the reactor, then place the reactor in a water bath and heat it to 70°C, then add 50mL of thiourea solution and mix, adjust the pH value to about 8.5-8.8, and put 50mL of ZnSO 4 The solution was added to the reaction system. The reaction process saw that the solution first turned yellow-green, gradually turned yellow, and finally turned orange. The reaction time is 0.5h. The deposited samples were taken out, washed with deionized water, and then dried with nitrogen to obtain Zn-doped Cd 0.5 Zn 0.5 S thin film with a thickness of about 70nm and a band gap of 3.1eV.

Embodiment 2

[0024] The drugs used are analytically pure reagents prepared with deionized water. CdSO with deionized water 4 Prepare a 0.02mol / L solution; prepare a 1.0mol / L thiourea solution with deionized water, and mix PbSO 4 Prepared into a 0.02mol / L solution. First mix 100mL of cadmium sulfate solution and 100mL of ammonia water in the reactor, then place the reactor in a water bath and heat it to 70°C, then add 50mL of thiourea solution and mix, adjust the pH value to about 9.5-9.5, and add 10mL of PbSO 4 The solution was added to the reaction system. The reaction process saw that the solution first turned yellow-green, gradually turned yellow, and finally turned orange. The reaction time is 0.5h. The deposited samples were taken out, rinsed with deionized water, and dried with nitrogen to obtain Pb-doped Cd 0.9 Pb 0.1 S thin film with a thickness of about 60nm and a band gap of 2.3eV.

Embodiment 3

[0026] The drugs used are analytically pure reagents prepared with deionized water. CdCl with deionized water 2 Prepare a 0.03mol / L solution; prepare a 1.0mol / L thiourea solution with deionized water, and ZnCl 2 Prepared into a 0.03mol / L solution. First mix 100mL of cadmium chloride solution and 100mL of ammonia water in the reactor, then place the reactor in a water bath and heat it to 70°C, then add 20mL of thiourea solution to adjust the pH value to about 8.0-8.2, and dissolve 50mL of ZnCl 2 The solution was added to the reaction system. The reaction process saw that the solution first turned yellow-green, gradually turned yellow, and finally turned orange. The reaction time is 0.6h. The deposited samples were taken out, washed with deionized water, and then dried with nitrogen to obtain Zn-doped Cd 0.7 Zn 0.3 S thin film with a thickness of about 80nm and a band gap of 2.9eV.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Bandgapaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention relates to a CdS buffer layer of a film solar battery and a preparation method. A cadmium-containing compound and a sulfur-containing compound carry out a chemical reaction, a compound or a solution containing metal ions is added into the reaction, the metal ions are doped, and a CdxM[1-x]S film is prepared and is used as the buffer layer material of a copper-indium-gallium-selenium(CIGS) series film solar battery. On the one hand, the invention reduces the use quantity of Cd in the material, reduces the problem of metal pollution of cadmium and is beneficial to environmental protection; on the other hand, the invention can effectively regulate the bandgap of the buffer layer material by doping, thereby enhancing the photoelectric conversion efficiency of the copper-indium-gallium-selenium series film solar battery.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a CdS buffer layer of a thin film solar cell and a preparation method thereof. Background technique [0002] In today's global energy crisis and increasing environmental pollution, solar energy has attracted more and more attention due to its advantages of no pollution, zero emissions, the widest distribution, and inexhaustible supply. Solar cells are one of the effective means to solve the increasingly serious energy crisis and environmental pollution. People are paying more and more attention to them. All countries in the world put the development of solar cell technology at the top of renewable energy. Among them, solar cell materials have become one of the most dynamic and attracting research fields. [0003] The first-generation solar cells based on crystalline silicon (monocrystalline silicon and polycrystalline silicon and their thin films) are currently in a dominant position ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L31/0216H01L31/18H01L31/032
CPCY02P70/50
Inventor 刘萍赖延清
Owner SHENZHEN DANBANG INVESTMENT GROUP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap