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Methods of forming an epitaxial layer on a group iv semiconductor substrate

A technology of semiconductor and epitaxial layer, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve expensive and high-cost problems

Inactive Publication Date: 2010-02-10
INNOVALIGHT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, current epitaxy techniques also tend to be expensive because high-cost equipment such as chemical vapor deposition (CVD), vapor phase epitaxy (VPE), molecular beam epitaxy (MBE) and liquid phase epitaxy (LPE) must be used

Method used

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  • Methods of forming an epitaxial layer on a group iv semiconductor substrate

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] now as Figure 1A As shown in , a porous compact or green film 38 is shown deposited on a native Group IV semiconductor substrate 30 with atomic periodic spacing representative of a crystalline material.

[0034] now as Figure 1B As shown in , a first epitaxial crystal thin film is shown. First, crystalline silicon nanoparticles between about 1 nm and about 15 nm are deposited on a silicon wafer substrate to form a porous compact. Next, the porous compact is heated to a temperature between about 400° C. and about 1100° C. for about 15 minutes to about 1 hour to form an epitaxial crystalline film that is substantially indistinguishable from the substrate 30 .

[0035] now as Figure 1C As shown in , a second epitaxial crystal film is shown. First, amorphous silicon nanoparticles between about 1 nm and about 15 nm are deposited on a silicon wafer substrate to form a porous compact. Next, the porous compact is heated to a temperature between about 300° C. and about 8...

Embodiment 2

[0038] A 1" x 1" x 0.2" silicon substrate was first doped with arsenic with a resistivity of approximately 0.005 ohm·cm and then cleaned by a concentrated hydrofluoric acid vapor treatment for 2 minutes.

[0039] In addition, silicon nanoparticle inks were prepared using approximately 8.0 nm + / - 0.5 nm silicon nanoparticles in a 20 mg / ml chloroform / chlorobenzene (4:1 v / v) solution in an inert environment and using an ultrasonic horn at 35% power Sonicate for 15 minutes.

[0040] Alternatively, the inventors believe that other solvents may be used, such as C4-C8 branched alcohols, cyclic alcohols, aldehydes and ketones, such as t-butanol, isobutanol, cyclohexanol, methylcyclohexanol, n-butanol Aldehydes, isobutyraldehyde, cyclohexanone and organosiloxanes.

[0041] A sufficient amount of silicon nanoparticle ink was applied to substantially cover the wafer surface, and a silicon nanoparticle porous compact was formed using spin casting at 700 rpm for 60 seconds.

[0042] Afte...

Embodiment 3

[0043] In the TEM image, it is shown that epitaxial layers can be formed from silicon nanoparticles on a silicon substrate at 765°C, which is significantly lower than the melting point of bulk silicon of about 1420°C.

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Abstract

A method of forming an epitaxial layer in a chamber is disclosed. The method includes positioning a Group IV semiconductor substrate in the chamber; and depositing a nanoparticle ink, the nanoparticleink including a set of Group IV nanoparticles and a solvent, wherein a porous compact is formed. The method also includes heating the porous compact to a temperature of between about 100 DEG C and about 1100 DEG C, and for a time period of between about 5 minutes to about 60 minutes with a heating apparatus, wherein the epitaxial layer is formed.

Description

[0001] Cross References to Related Applications [0001] This application claims the priority of U.S. Pat. App No. 60 / 874,873 published on December 13, 2006 entitled "Preparation of Epitaxial Thin Films Using Group IV Semiconductor Nanoparticles on Natural Group IV Semiconductor Substrates", and incorporated by reference into this application. technical field [0002] The present invention generally relates broadly to methods of fabricating Group IV semiconductors, and more particularly to methods of forming epitaxial layers on Group IV semiconductor substrates. Background technique [0003] Epitaxy is often the only practical method for high crystal-quality growth of many semiconductor materials, including process-important materials such as silicon-germanium, gallium nitride, gallium arsenide, and indium phosphide. Epitaxy is generally an interface between a thin film and a substrate, and generally describes the growth of ordered crystals on a single crystal substrate. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/208H01L21/20
CPCH01L21/02532H01L21/02601H01L21/02628H01L21/02535H01L21/02686H01L21/02381H01L21/02667
Inventor D·波普拉夫斯基F·莱米M·克尔曼A·梅泽
Owner INNOVALIGHT