Preparation method of casting polysilicon with large crystal grains in single crystal direction
A technology of polycrystalline silicon and monocrystalline silicon, which is applied in the field of solar photovoltaic power generation, can solve the problems of limited trapping effect and difficulty in improving the photoelectric conversion efficiency of cells, and achieve the effects of improving absorption efficiency, eliminating the reduction of cell efficiency, and reducing grain boundary density
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Embodiment 1
[0021] First spread 50 cuboid (length×width×height: 1cm×1cm×1cm) dislocation-free monocrystalline silicon blocks evenly on the bottom of the crucible, and then place 240kg of silicon raw material on these monocrystalline silicon blocks , doped with 20mg of dopant boron, to achieve furnace loading. The furnace chamber was evacuated, and Ar gas was used as a protective gas. Adjust the position of the heat preservation cover, and gradually heat the silicon raw material to above 1410°C, so that the silicon raw material is melted into a liquid, and the upper half of the monocrystalline silicon block at the bottom of the crucible is melted. Finally, cooling water is introduced into the bottom of the crucible for heat exchange, and the heat preservation cover is lifted at a speed of 1mm / min, so that the silicon melt gradually directional solidifies from the bottom upwards, and the unmelted single crystal silicon laid on the bottom acts as a seed crystal to induce grown, cast to for...
Embodiment 2
[0024] Spread 15 cylinders (diameter 5cm, height 2cm) of dislocation-free single crystal silicon blocks evenly on the bottom of the crucible, then place 240kg of silicon raw material on these single crystal silicon blocks, mix 20mg of dopant boron is used for furnace loading. The furnace chamber was evacuated, and Ar gas was used as a protective gas. Adjust the position of the heat preservation cover, and gradually heat the silicon raw material to above 1410°C, so that the silicon raw material is melted into a liquid, and the upper half of the monocrystalline silicon block at the bottom of the crucible is melted. Finally, cooling water is passed into the bottom of the crucible for heat exchange, and the heat preservation cover is lifted at a speed of 2mm / min, so that the silicon melt gradually directional solidifies from the bottom upwards, and the unmelted single crystal silicon laid on the bottom acts as a seed crystal to induce grown, cast to form a boron concentration of...
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