Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method of preparing (001) high orientation diamond film using H cation etching diamond nuclear

A technology of diamond film and ion etching, which is applied in metal material coating process, gaseous chemical plating, coating, etc., can solve the problem of high grain boundary density and impurity concentration, low nuclear density, and reduced adhesion between film and substrate problems such as low grain boundary density and impurity concentration, smooth surface, and the effect of promoting the reduction of grain boundary density

Inactive Publication Date: 2006-08-02
INST OF PHYSICS - CHINESE ACAD OF SCI
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the disadvantages of this technology are as follows: first, due to the lattice mismatch between diamond and silicon substrate, the nucleation density of diamond on silicon substrate is very low, and the density of nuclei in (001) orientation is even lower
Although bias nucleation helps to improve the diamond nucleation density and the density of (001)-oriented nuclei, the density of non-(001)-oriented nuclei is usually significantly higher than that of (001)-oriented nuclei, so the grown diamond film ( 001) orientation degree is not high, there is a high grain boundary density and defect concentration, and the quality is poor; second, the diamond shows a three-dimensional island structure in the early stage of growth, due to the low density of (001) orientation nuclei, when When the film is very thin, the non-(001) oriented nuclei have not been covered by the (001) oriented nuclei, the (001) oriented film has not yet formed, and the grain boundary density and impurity concentration in the film are relatively high
Therefore prepare oriented film with this method, only when reaching certain film thickness (usually film thickness is 5-10 micron), just can form (001) oriented film, and the increase of film thickness causes the high stress in the film, makes Reduced adhesion of the film to the substrate, limiting its wide application

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method of preparing (001) high orientation diamond film using H cation etching diamond nuclear
  • Method of preparing (001) high orientation diamond film using H cation etching diamond nuclear

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] Example 1 Using microwave plasma chemical vapor deposition equipment to prepare (001) high-orientation diamond thin films is as follows: the monocrystalline silicon wafer as the substrate substrate is mirror-polished using a polishing technique commonly used in the semiconductor industry, and the surface of the monocrystalline silicon wafer The roughness is less than 2nm, and then ultrasonically cleaned in ethanol, acetone and deionized water for 10 minutes each, and dried the surface of the substrate with dried and purified nitrogen, and placed it in a 1.5KW microwave chemical vapor deposition device from ASTEX Corporation in the United States. + Method for preparing (001) highly oriented diamond film by ion etching diamond core. The specific process is as follows: Nucleation conditions: Plasma is formed, the pressure is controlled at 20 mbar, the substrate temperature is 1000 ℃, and CH is introduced. 4 And H 2 , H 2 Flow rate is 200sccm, CH 4 And H 2 The volume ratio is 7...

Embodiment 2

[0016]Embodiment 2 Another condition for preparing the (001) highly oriented film with microwave equipment is that the microwave equipment and the substrate processing are the same as in Embodiment 1. The pressure is controlled at 30mbar, the substrate temperature is 700℃, and CH is passed through 4 And H 2 , H 2 Flow rate is 100sccm, CH 4 And H 2 The volume ratio is 3%, and the microwave power is 700W. After the above parameters are stable, apply a DC bias voltage of -100V, control the nucleation time to 25 minutes, and make the diamond nucleation density 10 9 / cm 2 about. Then, turn off the bias voltage, CH 4 And H 2 , Evacuated to 10 -2 mbar, remove residual CH 4 , And then fill it with 300sccm of H 2 , Keep the pressure at about 30mbar, the substrate temperature at 700℃, and the microwave power at 700W. After the above parameters are stabilized, apply a bias voltage of -60V, and use the formed H + The ion etches the diamond core on the surface of the substrate, and the etching...

Embodiment 3

[0017] Embodiment 3 Another condition for preparing a (001) highly oriented film with microwave equipment is that the microwave equipment and the substrate processing are the same as in Embodiment 1. The pressure is controlled at 23mbar, the substrate temperature is 800℃, and CH is passed through 4 And H 2 , H 2 The flow rate is 150sccm, CH 4 And H 2 The volume ratio is 5%, and the microwave power is 900W. After the above parameters are stable, apply a DC bias voltage of -140V, control the nucleation time to 20 minutes, and make the diamond nucleation density 10 9 / cm 2 about. Then, turn off the bias voltage, CH 4 And H 2 , Evacuated to 10 -2 mbar, remove residual CH 4 , And then fill with 500sccm of H 2 , Keep the pressure at about 23mbar, the substrate temperature at 800°C, and the microwave power at 900W. After the above parameters are stabilized, apply a bias voltage of -120V, and use the formed H + The ions etch the diamond core on the surface of the substrate, and the etchin...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
surface roughnessaaaaaaaaaa
Login to View More

Abstract

A process for preparing high-orientation (001) diamond film by H-ion etching to diamond nuclear includes such steps as applying negative DC bias to the moncrystal silicon substrate, providing methane and H2 as raw gas, bias nucleating, bias etching and texture growing to obtain diamond film. Its advantages are thin thickness (less than 2 microns), low crystal interface density and impurity concentration, smooth surface, high orientation, low stress and high adhesion.

Description

Technical field [0001] The invention relates to a method for preparing a diamond film by chemical vapor deposition, in particular to a method that uses H + Ion etching technology is used to grow (001) highly oriented diamond films with high quality characteristics. Background technique [0002] (001) Oriented diamond film means that the crystal grains in the diamond film reveal a square (001) plane. The (001) highly oriented diamond film has the characteristics of low grain boundary density, less impurities and defects, smooth and flat surface, etc. It is widely used in many fields, especially in the field of electronics. [0003] The existing technology for preparing (001) oriented diamond film closest to the present invention is an article published in "Diamond and Related Materials, 2(1993) 1112", entitled "(001) Hetero-epitaxial growth of diamond on silicon "(Heteroepitaxial diamond growth on (001) silicon), the method of preparing diamond film intr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/27
Inventor 顾长志
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com