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Preparation method of pyrochlore-type coating conductor barrier layer

A technology for coating conductors and barrier layers, applied in the field of preparation of pyrochlore-type barrier layers, can solve the problems of complex equipment, increased storage difficulty, and high cost, and achieve large-scale preparation, simplify preparation processes, and improve stability. Effect

Active Publication Date: 2010-03-10
NORTHWEST INSTITUTE FOR NON-FERROUS METAL RESEARCH
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  • Summary
  • Abstract
  • Description
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AI Technical Summary

Problems solved by technology

[0004] At present, the preparation technology of the barrier layer mostly adopts vacuum physical vapor deposition (PVD) and non-vacuum chemical solution deposition (CSD). There are difficulties in practical long strips; the latter is characterized by relatively simple process, precise control of the ratio of metal components, uniform film formation on the surface of complex shapes, low equipment cost, and easy continuous preparation. Among them, metal in CSD technology Organic deposition (MOD) process is widely used
At present, the MOD method is used to prepare La 3 TaO 7 The precursor of the barrier layer is usually the alkoxide of lanthanum and tantalum, but the easy hydrolysis of the metal alkoxide in the air will make the preparation and storage of the precursor more difficult, which is not conducive to the deposition of the barrier layer under normal conditions, so choose Appropriate precursors to prepare a stable precursor solution to prepare c-axis textured La 3 TaO 7 The barrier layer will greatly promote the progress of the preparation technology of coated conductors

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] La(CH 3 COCHCOCH 3 ) 3 ·3H 2 O and Ta(CH 3 CH 2 Oh) 4 (CH 3 COCHCOCH 3 ) according to the molar ratio of 3:1 and mixed, then add a mixed solvent of propionic acid and methanol with a volume ratio of 1:1, heat and stir for 30 minutes to dissolve all the solids, and configure the total molar concentration to be 0.1mol / L Spin-coat the precursor solution at a rate of 4000 rpm for 10 seconds on the NiW substrate that has been ultrasonically cleaned with acetone; place the coated substrate in a tube furnace and heat it from room temperature at 300°C / min Heating rate of heating, in Ar-4%H 2 In the atmosphere, keep the temperature at 1100°C for 0.5 hours, and finally cool down to room temperature at a cooling rate of 2°C / min, that is, La with good c-axis texture and small surface roughness (RMS less than 5nm) is prepared 3 TaO 7 barrier layer.

Embodiment 2

[0016] La(CH 3 COCHCOCH 3 ) 3 ·3H 2 O and Ta(CH 3 CH 2 Oh) 4 (CH 3 COCHCOCH 3 ) according to the molar ratio of 3:1 and mixed, then add a mixed solvent of propionic acid and methanol with a volume ratio of 2:1, heat and stir for 30 minutes to dissolve all the solids, and configure the total molar concentration to be 0.4mol / L Spin-coat the precursor solution at a rate of 2500 rpm for 20 seconds on the NiW substrate that has been ultrasonically cleaned with acetone; place the coated substrate in a tube furnace and heat it from room temperature at 300°C / min Heating rate of heating, in Ar-4%H 2 In the atmosphere, the temperature was kept at 1100°C for 0.75 hours, and finally cooled to room temperature at a cooling rate of 2°C / min, that is, La with good c-axis texture and small surface roughness (RMS less than 5nm) was prepared. 3 TaO 7 barrier layer.

Embodiment 3

[0018] La(CH 3 COCHCOCH 3 ) 3 ·3H 2 O and Ta(CH 3 CH 2 Oh) 4 (CH 3 COCHCOCH 3 ) according to the molar ratio of 3:1 and mixed, then add a mixed solvent of propionic acid and methanol with a volume ratio of 3:2, heat and stir for 30 minutes to dissolve all the solids, and configure the total molar concentration to be 0.2mol / L Spin-coat the precursor solution at a rate of 3000 rpm for 30 seconds on the NiW substrate that has been ultrasonically cleaned with acetone; place the coated substrate in a tube furnace and heat it from room temperature at 300°C / min Heating rate of heating, in Ar-4%H 2 In the atmosphere, keep the temperature at 1100°C for 0.6 hours, and finally cool down to room temperature at a cooling rate of 2°C / min, that is, La with good c-axis texture and small surface roughness (RMS less than 5nm) is prepared 3 TaO 7 barrier layer.

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Abstract

The invention discloses a preparation method of a pyrochlore-type coating conductor barrier layer. The method comprises the following steps: weighting lanthanum acetylacetonate containing three piecesof crystal water and solid acetylacetone tetraethanol tantalum according to a mol ratio of 3:1 before mixing; then, adding a mixed solvent of propionic acid and methanol to prepare a precursor solution; coating the precursor solution in spinning on a substrate ultrasonically cleaned by acetone; arranging the well-coated substrate on a tubular furnace for heat treatment at high temperature in reducing atmosphere; and cooling to a room temperature to obtain an La3TaO7 barrier layer. The invention firstly adopts conventional and simple metal salts to prepare the precursor solution and then adopts a preparation method by one-step rapid heat treatment to prepare an La3TaO7 barrier layer film with favorable c-axis texture and flat surface, thereby effectively improving the stability of the precursor solution, simplifying the preparation conditions of the precursor solution and the preparation process of the barrier layer and realizing the low-cost and large-scale preparation of the La3TaO7barrier layer.

Description

technical field [0001] The invention relates to a preparation method of a pyrochlore-type barrier layer, in particular to a pyrochlore-type barrier layer La in a coated conductor. 3 TaO 7 method of preparation. Background technique [0002] Coated conductors have become the material of choice to replace the first generation of practical high-temperature superconducting materials due to their superior high-field performance. The coated conductor is a multi-layer structure consisting of base band / barrier layer / superconducting layer / protection layer. At present, the research and development of coated conductors in China is far behind the world level in terms of basic research and preparation technology, especially in the barrier layer deposition technology. Therefore, from the practical point of view, there is an urgent need for low-cost deposition technology In order to solve the technical problems of barrier layer preparation in coated conductors. [0003] The barrier lay...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C20/08H01B12/06
CPCY02E40/642Y02E40/60
Inventor 王耀卢亚锋李成山金利华于泽铭
Owner NORTHWEST INSTITUTE FOR NON-FERROUS METAL RESEARCH
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