Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Production technology of high purity silicon carbide

A high-purity silicon carbide and production process technology, applied in the chemical and metallurgical fields, can solve the problems of no production capacity, high market price and high technical requirements, and achieve the effects of low production cost, easy industrial production and short process flow

Inactive Publication Date: 2010-05-12
杨大锦
View PDF0 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the high preparation cost, complex process and high technical requirements of high-purity silicon carbide, there is no independent production capacity in China at present, and the technology of industrial production is monopolized by large foreign companies, so the market price is also relatively high. Therefore, it is necessary to develop low-cost silicon carbide. High-purity silicon carbide has broad market prospects for its application in high-end technology fields, and is of great significance to breaking foreign technology monopoly

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Production technology of high purity silicon carbide

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0009] Embodiment 1: the impurity content that grinds is that 0.05% silicon dioxide and the carbon black of impurity content<0.09% pass through 0.0043mm sieve respectively, after mixing with mass ratio 1: 1.2, adjust with the sulfuric acid solution that concentration is 60g / L Slurry, the liquid-solid ratio is 4:1, and then placed in a pressurized autoclave, the pressure inside the autoclave is controlled to 1.2MPa, the temperature is 200 ° C, stirred for 1 hour, the slag liquid after sulfuric acid leaching is filtered to obtain mixed slag, washed with water until neutral ; Granulate the mixed slag with a particle size of 3 cm, put it into an electric furnace for roasting at a temperature of 1600 degrees, break the obtained silicon carbide, wash with a sulfuric acid solution with a concentration of 80 g / L for 4 hours, filter, and dry High-purity silicon carbide with an impurity content of less than <0.001% is obtained.

Embodiment 2

[0010] Embodiment 2: The impurity content that will grind is that 0.05% silicon dioxide and the carbon black of impurity content<0.09% pass through 0.0043mm sieve respectively, after mixing with mass ratio 1: 1.2, adjust with the sulfuric acid solution that concentration is 60g / L Slurry, the liquid-solid ratio is 4:1, and then placed in a pressurized autoclave, the pressure inside the autoclave is controlled to 1.2MPa, the temperature is 200 ° C, stirred for 1 hour, the slag liquid after sulfuric acid leaching is filtered to obtain mixed slag, washed with water until neutral ; Granulate the mixed slag with a particle size of about 3 cm, put it into an electric furnace for roasting at a temperature of 1600 degrees, break the obtained silicon carbide, wash with a sulfuric acid solution with a concentration of 80 g / L for 4 hours, filter, and dry Dry to obtain high-purity silicon carbide with an impurity content of less than <0.001%.

Embodiment 3

[0011] Embodiment 3: the impurity content of grinding is 0.03% silicon dioxide and the carbon black of impurity content<0.05% pass through 0.0043mm sieve respectively, after mixing with mass ratio 1: 1.2, adjust with the sulfuric acid solution that concentration is 60g / L Slurry, the liquid-solid ratio is 4:1, and then placed in a pressurized autoclave, the pressure inside the autoclave is controlled to 1.2MPa, the temperature is 200°C, and stirred for 2 hours, the slag liquid after sulfuric acid leaching is filtered to obtain mixed slag, which is washed with water until neutral ; Granulate the mixed slag with a particle size of 3 cm, put it into an electric furnace for roasting at a temperature of 1700 degrees, break the obtained silicon carbide, wash with a sulfuric acid solution with a concentration of 100 g / L for 5 hours, filter, and dry High-purity silicon carbide with an impurity content of less than <0.001% is obtained.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
densityaaaaaaaaaa
concentrationaaaaaaaaaa
Mohs hardnessaaaaaaaaaa
Login to View More

Abstract

The invention provides a production technology of high purity silicon carbide, comprising the following steps of: mixing silicon dioxide and carbon black with the weight ratio of 1:1.2; preparing pulp from the mixture and sulfuric acid solution with the concentration of 60-80g / l according to the solid-liquid ratio of 1:4; putting the pulp in a pressurizing reactor; controlling the pressure in the reactor; stirring for 1-3h,and filtering to obtain mixing slag; washing the mixing slag to neutral; pelletizing the mixing slag, putting particles into an electric furnace; roasting the particles with the temperature of 1600 DEG C to 1800 DEG C; separating liquid and solid; cooling; crushing obtained silicon carbide; washing the crushed silicon carbide by sulfuric acid with the concentration of 80-120g / L; filtering, and drying to obtain the high purity silicon carbide with the impurity content less than 0.001 percent. The invention belongs to a smelting method for preparing the high purity silicon carbide by the silicon dioxide and the carbon black. After carrying out pressurization and acid leaching on the silicon dioxide and graphite, the electric furnace is utilized to roast, and the silicon dioxide and the graphite are separated, then the sulfuric acid is used to wash the silicon dioxide and the graphite to obtain the high purity silicon carbide. The invention has the advantages of simple equipment, short technological process, low production cost and environment protection.

Description

technical field [0001] The invention relates to the fields of metallurgy and chemical industry, in particular to a process for producing high-purity silicon carbide from silicon dioxide and carbon black. Background technique [0002] The molecular formula of silicon carbide is SiC. Silicon carbide is a typical covalently bonded compound with a decomposition temperature of 2400°C at one atmospheric pressure and no melting point. The density of SiC is 3.18g / cm 3 , its Mohs hardness is between 9.2 and 9.3, and its microhardness is 3300kg / cm 2 . Silicon carbide is resistant to high temperatures, does not react with strong acids and alkalis, has good electrical and thermal conductivity, and has strong radiation resistance. Due to its fine particle size, narrow distribution and uniform quality, high-purity silicon carbide has the characteristics of large specific surface area, high surface activity, fast chemical reaction, high solubility, low sintering temperature, high sinter...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/36
Inventor 杨大锦赵群谢刚陈加希李怀仁李永佳李永刚廖元双王子龙
Owner 杨大锦
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com