Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Rare-earth doped bismuth titanate up-conversion luminescence nanometer crystal material

A nanocrystalline material, rare earth doping technology, applied in luminescent materials, chemical instruments and methods, etc., can solve the problem of low luminous intensity, and achieve the effect of high luminous intensity, stable performance and low dielectric constant

Inactive Publication Date: 2010-06-09
HARBIN INST OF TECH
View PDF1 Cites 26 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to solve the problem of low luminous intensity of existing rare earth-doped titanate up-conversion luminescent materials, and the present invention provides a rare-earth-doped bismuth titanate up-conversion luminescent nanocrystal material

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Rare-earth doped bismuth titanate up-conversion luminescence nanometer crystal material
  • Rare-earth doped bismuth titanate up-conversion luminescence nanometer crystal material
  • Rare-earth doped bismuth titanate up-conversion luminescence nanometer crystal material

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment approach 1

[0014] Specific Embodiment 1: In this embodiment, the rare earth-doped bismuth titanate up-conversion luminescent nanocrystalline material is obtained by doping Er into the bismuth titanate matrix through the sol-gel method, and its general formula is (Bi 4(1-x) Er 4x ) Ti 3 o 12 , where x=0.005~0.1.

[0015] The particle size of the rare earth erbium-doped bismuth titanate up-conversion luminescent nanocrystal material in this embodiment is 20-30 nm. The up-conversion luminescent nanocrystalline material of this embodiment emits green light with strong emission intensity under the excitation of a 980nm laser.

[0016] The preparation method of the rare earth erbium-doped bismuth titanate up-conversion luminescent nanocrystalline material of the present embodiment is as follows: 1. Bi(NO 3 ) 3 ·5H 2 O was added to ethylene glycol methyl ether, stirred and dissolved before adding Er(NO 3 ) 3 ·6H 2 O, after stirring and dissolving, drop into tetrabutyl titanate to obtai...

specific Embodiment approach 2

[0017] Embodiment 2: This embodiment differs from Embodiment 1 in that x=0.01˜0.08. Other steps and parameters are the same as those in Embodiment 1.

[0018] The particle size of the rare earth erbium-doped bismuth titanate up-conversion luminescent nanocrystal material in this embodiment is 20-30 nm. The up-conversion luminescent nanocrystalline material of this embodiment emits green light with strong emission intensity under the excitation of a 980nm laser.

specific Embodiment approach 3

[0019] Embodiment 3: This embodiment differs from Embodiment 1 in that x=0.05. Other steps and parameters are the same as those in Embodiment 1.

[0020] The particle size of the rare earth erbium-doped bismuth titanate up-conversion luminescent nanocrystal material in this embodiment is 20-30 nm. The up-conversion luminescent nanocrystalline material of this embodiment emits green light with strong emission intensity under the excitation of a 980nm laser.

[0021] The rare earth erbium-doped bismuth titanate up-conversion luminescent nanocrystalline material in this embodiment is (Bi 3.8 Er 0.2 ) Ti 3 o 12 .

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Particle sizeaaaaaaaaaa
Login to View More

Abstract

The invention relates to a rare-earth doped bismuth titanate up-conversion luminescence nanometer crystal material which relates to a bismuth titanate luminescence nanometer crystal material. The invention solves the problem of low luminous intensity of the rare-earth doped bismuth titanate up-conversion luminescence nanometer crystal material. The rare-earth doped bismuth titanate up-conversion luminescence nanometer crystal material is obtained by doping Er, Er / Yb, Yb / Tm and Er / Yb / Tm to the bismuth titanate matrix by a sol-gel method. The up-conversion luminescence nanometer crystal material can realize up-conversion luminescence of different colours of red, green, yellow, blue and white under the excitation of infrared radiation with the wavelength of 980nm and has high luminous intensity. The rare-earth doped bismuth titanate up-conversion luminescence nanometer crystal material can be widely applied in the fields of infrared radiation detection, anti-counterfeit, bimolecular fluorescent mark, and the like.

Description

technical field [0001] The invention relates to a bismuth titanate-based luminous nanocrystal material. Background technique [0002] The up-conversion luminescent material is a material that is mainly excited by infrared light with a longer wavelength and emits visible light. Infrared light has low energy, and as a bioluminescent material, it has no harm to organisms. Rare earth ion-doped upconversion luminescent nanomaterials have aroused great research interest and made great progress due to their potential applications in upconversion phosphors, infrared detection devices, fluorescent labels of biomolecules, and anti-counterfeiting. Choosing a suitable host material can greatly improve the efficiency of upconversion luminescence. Many rare earth oxides and rare earth fluorides are widely used in upconversion luminescent host materials due to their low phonon energy and stable physical and chemical properties. However, the high cost of rare earth compounds limits their...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C09K11/74
Inventor 陈向群孙秋王福平蔡伟李宇龙孔帆李丽萍
Owner HARBIN INST OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com