pvdf organic polymer film capacitor

A polymer film and capacitor technology, applied in the direction of thin film/thick film capacitors, laminated capacitors, fixed capacitor electrodes, etc., can solve the problem that PVDF polymer films cannot be photolithographically etched, so as to avoid the easy breakdown of the tip effect and ensure reliability The effect of stability and avoidance of crosstalk

Active Publication Date: 2011-11-30
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of this patent is to overcome the problem that PVDF polymer films cannot be photolithographically used in the existing PVDF capacitor device technology, and propose a photolithographic preparation technology for PVDF organic polymer film capacitors. This PVDF organic polymer capacitor structure can solve the problem of capacitors. Edge breakdown effect, and integration with subsequent photolithography processes, facilitating integration with other devices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • pvdf organic polymer film capacitor
  • pvdf organic polymer film capacitor
  • pvdf organic polymer film capacitor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0046] Please refer to the attached figure 1 , the PVDF organic polymer film capacitor device of this patent, its device structure includes:

[0047] A substrate 1, this substrate 1 is sapphire, silicon, gallium nitride or ITO glass;

[0048] A capacitor bottom electrode 2, the bottom electrode 2 is a square electrode, made on the substrate 1, an Al film with a thickness of not less than 100nm prepared for thermal evaporation;

[0049] A dielectric insulating layer 3, the dielectric insulating layer 3 is an open hole type, grown on the bottom electrode 2 and part of the substrate 1, completely covering part of the bottom electrode, the dielectric insulating layer 3 is silicon dioxide or nitrogen Silicon oxide dielectric film with a thickness not less than 300nm;

[0050] An organic polymer film 4, the organic polymer film grows on the opening of the dielectric insulating layer, the area is larger than the opening area of ​​the dielectric insulating layer, and the edge falls ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a PVDF organic polymer film capacitor, which is characterized in that the device structure comprises: a substrate; a metal bottom electrode grown on the substrate; a dielectric insulating layer, the dielectric insulating layer It is a hole type, and part of the metal bottom electrode is wrapped; an organic polymer film, the organic polymer film grows at the opening of the dielectric insulating layer, and the area is slightly larger than the opening area; a metal upper electrode, the metal upper electrode grows On the organic polymer film; a wrapping electrode, the wrapping electrode is grown on the metal upper electrode, and wraps the organic polymer film and the metal upper electrode. The device structure of the present invention uses a dielectric layer to isolate the upper and lower electrodes, uses the upper electrode as a PVDF film photolithography mask, and finally uses the wrapped electrode to protect the side of the PVDF organic polymer film, which facilitates the implementation of subsequent traditional processes and makes it compatible with The integrated preparation of other devices is not limited by traditional processes.

Description

technical field [0001] This patent relates to electronic component technology, and specifically refers to a PVDF organic polymer film capacitor. Background technique [0002] In recent years, organic polymer thin films have attracted widespread attention due to their excellent electrical properties, simple process, low cost, and compatibility with various organic and inorganic substrates. They have moved from material research to the preparation of various organic devices. It is already comparable to inorganic materials. At the same time, it has huge potential applications in the fields of display, radio frequency identification system, smart card storage, etc., and promotes the generation of active circuits on organic substrates. [0003] The preparation method of organic polymer films is completely different from that of inorganic films. At present, the preparation of organic polymer films mainly adopts two processes: first, sol-gel method or LB film and other processes, ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01G4/33H01G4/14H01G4/005H01L21/02
Inventor 李超孙璟兰孟祥建王建禄田莉乔辉张燕李向阳
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products