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Phase-change storage unit with low power consumption and high stability and preparation method thereof

A high-stability, phase-change storage technology, applied in information storage, static memory, digital memory information, etc., can solve problems such as the influence of C-RAM device reliability, improve device stability, improve thermal stability, reduce The effect of power consumption

Active Publication Date: 2010-06-23
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, larger grains are contradictory to the current trend of shrinking size in the research and development of phase change memory, and the emergence of large grains has a negative impact on the reliability of C-RAM devices

Method used

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  • Phase-change storage unit with low power consumption and high stability and preparation method thereof
  • Phase-change storage unit with low power consumption and high stability and preparation method thereof
  • Phase-change storage unit with low power consumption and high stability and preparation method thereof

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Embodiment 1

[0017] see Figure 1 to Figure 10 , the phase change memory unit with low power consumption and high stability of the present invention at least comprises: a semiconductor substrate, a lower electrode layer, an insulating layer, a phase change material region, a dielectric material coating layer, and an upper electrode, wherein the dielectric The material coating layer section completely wraps the phase change material region, and the material used is Si that does not react with the phase change material 3 N 4 , Ge 3 N 4 , HfO 2 , Ta 2 O 5 , TiO 2 , CeO 2 One or more of them, the thickness is 2-6nm, and the phase change material is a material with reversible phase change properties, such as germanium antimony tellurium alloy (Ge-Sb-Te), antimony tellurium alloy (Sb-Te), germanium antimony tellurium alloy (Sb-Te) Alloy (Ge-Sb), or other chalcogenide phase change materials, etc.

[0018] Si is prepared by magnetron sputtering 3 N 4 Dielectric material wraps Ge 2 Sb 2...

Embodiment 2

[0032] The phase-change memory unit with low power consumption and high stability of the present invention at least comprises: a base layer composed of semiconductor materials, a phase-change material layer, upper and lower electrodes, etc., wherein the phase-change material layer is composed of a phase-change material and a dielectric material doped layer, or a composite layer composed of a phase change material and a dielectric material, the dielectric material is a material that does not react with the phase change material, which may be Si 3 N 4 , Ge 3 N 4 , HfO 2 , Ta 2 O 5 , TiO 2 , CeO 2 One or more of the phase change material is a material with reversible phase change properties, such as germanium antimony tellurium alloy (Ge-Sb-Te), antimony tellurium alloy (Sb-Te), germanium antimony alloy (Ge-Sb) , or other chalcogenide phase change materials, etc.

[0033] The preparation method is as follows: firstly, sputtering, chemical vapor deposition, laser pulse dep...

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Abstract

The invention provides a phase-change storage unit with low power consumption and high stability, comprising a substrate layer, a phase-change material area, an electrode and a dielectric material coating layer which coats the whole phase-change material area, wherein the dielectric material coating layer is made of a material which is not reacted with a phase-change material, the phase-change material of the phase-change material area is a pure phase-change material, or a doped material formed by the phase-change material or a dielectric material, or a composite material formed by the phase-change material and the dielectric material, and the like. The invention also provides a method for preparing the phase-change storage unit with low power consumption and high stability, and the formed phase-change storage unit can effectively restrict elements in the phase-change material, is beneficial to stabilizing the material performance, and simultaneously restricts crystals of the phase-change material from growing up, promotes the resistance ratio of the material, and reduces the power consumption of components.

Description

technical field [0001] The invention relates to a phase-change memory unit and a preparation method, in particular to a phase-change memory unit with low power consumption and high stability and a preparation method. Background technique [0002] Various semiconductor storage technologies currently available include conventional volatile technology and non-volatile technology. Among them, memories using conventional volatile technologies such as static random access memory (SRAM), dynamic random access memory (DRAM), etc., Memory using non-volatile technology such as ferroelectric random access memory (FeRAM), electrically erasable programmable read only memory (EEPROM), flash memory (FLASH), etc., and phase change memory (C-RAM) as a kind of Emerging semiconductor memory, compared with the aforementioned various semiconductor memory technologies, has non-volatile, long cycle life (>10 13 times), small size of components, low power consumption, multi-level storage, high-...

Claims

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Application Information

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IPC IPC(8): H01L45/00G11C11/56
Inventor 宋志棠宋三年
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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