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Fast memory construction by using tunneling diode as selection switch tube

A technology of tunneling diodes and selection switches, which is applied in the direction of electric solid devices, semiconductor devices, electrical components, etc., can solve the problems of large chip area and occupy a large area, so as to simplify the unit area, reduce the unit area, and reduce redundant Effect of word line GATE

Active Publication Date: 2010-06-30
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The usual selection transistors all adopt MOSFET (MOS Field Effect Transistor), so they tend to occupy a large area, making the area of ​​the entire FLASH CELL (fast memory unit) very large, resulting in the use of large storage capacity chip area becomes very big

Method used

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  • Fast memory construction by using tunneling diode as selection switch tube
  • Fast memory construction by using tunneling diode as selection switch tube
  • Fast memory construction by using tunneling diode as selection switch tube

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Experimental program
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Embodiment Construction

[0015] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments.

[0016] The tunneling diode used in the present invention adopts a vertical layout in the entire FLASH CELL unit, and controls the longitudinal tunneling current of the tunneling diode through the gate of the FLASH CELL, and uses the common BIT LINE end of the 2T FLASH CELL to generate Transverse electric field to obtain tunneling current. Therefore, the data of the memory tube is selected and read through the gate voltage (VWL) and the bit line voltage (VBL) of the entire FLASH CELL.

[0017] like image 3 As shown, the present invention shares the tunneling diode and the gate gate of the SONOS transistor to form the selection switch transistor of the FLASHCELL. image 3 The N+ source and drain injection area on the left is the BIT LINE end of the cell, the P+ source and drain injection area on the right is the SOURCE LINE end (source end), ...

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PUM

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Abstract

The invention discloses a fast memory construction by using a tunneling diode as a selection switch tube. The memory cell comprises a SONOS transistor and the tunneling diode. The selection switch tube of the fast memory cell is formed by using the commonly used gate of the tunneling diode and the SONOS transistor. An N+ source and drain injection region on the left side of the memory cell is a bit-line end and a P+ source and drain injection region on the right side is a source-line end. A shallow P+ zener diode under the right grid and the N+ source and drain injection region form the vertical tunneling diode. The grid of the SONOS transistor is a word-line end and the SONOS transistor is an ONO multi-media structure gate oxide. The invention can decrease the area of the existing memory cell and save manufacturing cost.

Description

technical field [0001] The invention relates to a semiconductor integrated circuit manufacturing device, in particular to a memory unit structure, in particular to a fast memory structure using a tunneling diode as a selection switch tube. Background technique [0002] At present, the unit area of ​​the mainstream 2T FLASH NVM (fast access non-volatile memory with dual transistor structure) unit memory is relatively large, which leads to the chip area used for data storage especially in products with larger storage capacity It is very large and increases the manufacturing cost. [0003] like figure 1 and figure 2 Shown, the storage cell of the fast access nonvolatile memory of existing double transistor structure is by a SONOS (silicon POLY GATE-oxide ODIXE-nitride NITRIDE-oxide ODIXE-silicon SILICON) transistor (FET) and a FLASH NPASS FET (flash memory cell selection field tube) constitutes. Wherein, the SONOS transistor has a gate gate (SONOS GATE), and the NPASS tran...

Claims

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Application Information

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IPC IPC(8): H01L27/115
Inventor 陈广龙
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP