Sn-Ge-As alloy as well as preparation method and use thereof

An arsenic alloy, tin germanium technology, applied in the field of tin germanium arsenic alloy material and its preparation, can solve the problem of difficulty in adding arsenic element, and achieve the effects of high arsenic content, wide frequency band, and reducing series resistance

Active Publication Date: 2009-05-06
BEIJING INST OF NONFERROUS METALS & RARE EARTH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0015] Another object of the present invention is to provide a method for preparing a tin-germanium-arsenic alloy material, which uses a unique doping technology to add low-boiling and volatile ar

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] The tin-germanium-arsenic master alloy is prepared by the following preparation method, and its composition and mass percentage are: Ge: 3%, As: 10%. Sn: balance (referred to as SnGe3As10).

[0055] The preparation process is as follows:

[0056] a) Prepare raw materials: Purify tin 4N (99.99%) raw materials by electrolysis to remove impurity elements (mainly control Pb, Sb, In, Bi and rare earth elements), so that the purity of metal tin can reach more than 5N (>99.999 %), purchased germanium and arsenic raw materials above 5N; calculated and weighed according to the above-mentioned composition and mass percentage ratio.

[0057] b) Put the quartz crucible in the order of arsenic, germanium and tin, and then put the quartz crucible into the autoclave;

[0058] c) vacuuming, vacuum degree 5Pa;

[0059] d) Fill the autoclave with argon, and control the pressure in the autoclave within the range of 5MPa;

[0060] e) heating up, controlling the heating rate to 10°C / min...

Embodiment 2

[0066] The method described in Example 1 was used to prepare a tin-germanium-arsenic master alloy, and its composition and mass percentage were: Ge: 1%, As: 5%. Sn: balance (referred to as SnGe1As5).

Embodiment 3

[0068] The method described in Example 1 was used to prepare the tin-germanium-arsenic master alloy, and its composition and weight percentage were: Ge: 5%, As: 10%. Sn: balance (referred to as SnGe5As10).

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Abstract

The invention provides a tin-germanium-arsenic alloy material, a method for preparing the same and application thereof. The alloy material consists of the following components in weight percentage: 0.05 to 5 percent of Ge, 1 to 10 percent of As, and the balance being Sn. The preparation method comprises the following steps: in the range of the weight percentage, the high-purity tin, germanium and arsenic materials are weighed up; according to the order of arsenic, germanium and tin, the materials are placed in a quartz crucible, and the quartz crucible is placed in a high pressure reaction kettle; the reaction kettle is pumped vacuum and filled with argon, and the temperature and pressure of the reaction kettle are controlled to melt the tin and the germanium and make arsenic vapor enter the inner part of the tin-germanium melt mass to form an intermediate alloy; the intermediate alloy is cooled down to obtain tin-germanium-arsenic intermediate alloy ingot; and according to the weight percentage, the obtained intermediate alloy ingot and the remained tin and germanium are melted together and cast to obtain the tin-germanium-arsenic alloy material. The tin-germanium-arsenic alloy material is the basic alloy material for preparing high-quality tunnel diode, in which the tin-germanium-arsenic alloy material plays a role of an electrode electrodes, transforms P<+> to N<+> to form N<+>P<+> and a narrow space charge area and can be used to prepare vaporization plating materials as well as sputtering target materials.

Description

technical field [0001] The invention relates to a light metal alloy preparation technology, in particular to a tin-germanium-arsenic alloy material and a preparation method and application thereof. Background technique [0002] Tunnel diode is a crystal diode with tunnel effect current as the main current component: [0003] When both the P side and the N side are heavily doped, some carriers may penetrate the potential barrier to generate additional current. This mechanism is called the tunneling effect of quantum mechanics. This is possible in the following cases: [0004] (1) The Fermi level is located inside the conduction band or valence band; [0005] (2) The width of the space charge is very narrow, so there is a high probability of tunnel penetration; [0006] (3) At the same energy level, there are electrons in the energy band on one side and holes in the energy band on the other side. [0007] The above conditions are met when both sides of the junction are hea...

Claims

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Application Information

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IPC IPC(8): C22C12/00B21B1/00C23C14/14C23C14/24C23C14/34C22C1/03B22D21/00C25C3/34
Inventor 姜学昭董保全史秀梅
Owner BEIJING INST OF NONFERROUS METALS & RARE EARTH
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