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Temperature sensor based on zinc oxide nanowire

A zinc oxide nanowire and temperature sensor technology, which is applied to thermometers, thermometers and instruments using electrical/magnetic components directly sensitive to heat, etc. The effect of fast response and wide temperature measurement range

Inactive Publication Date: 2011-07-27
TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the problems of large volume and relatively slow response speed, the traditional temperature sensor has inherent shortcomings in the field of chip temperature control and other fields that have high requirements for the volume and response speed of the sensor.

Method used

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  • Temperature sensor based on zinc oxide nanowire
  • Temperature sensor based on zinc oxide nanowire
  • Temperature sensor based on zinc oxide nanowire

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] The silicon wafer substrate with microelectrodes was cleaned with acetone, ethanol and water in sequence, and dried with nitrogen gas. Zinc oxide nanowires with a diameter of 60-100nm and a length of 20-50μm were obtained by thermal evaporation, such as image 3 shown. After removing the zinc oxide nanowires from the silicon chip substrate, place them in absolute ethanol to form a uniform dispersion, get 0.1ml of the dispersion (wherein the zinc oxide nanowire content is less than 0.1mg) and drop it onto the silicon wafer with microelectrodes. On the chip, the external circuit is connected, and a pulse voltage of 0.1V and 50 Hz is applied to both ends of the zinc oxide nanowire to make the contact with the microelectrode more firm, that is, a temperature sensor based on the zinc oxide nanowire is formed. Exemplary measurements made in this example range from -180°C to 0°C. The relationship between its conductivity and temperature is shown in Figure 4. Figure a shows t...

Embodiment 2

[0022] The silicon wafer substrate with microelectrodes was cleaned with acetone, ethanol and water in sequence, and dried with nitrogen gas. Using an aqueous solution of zinc acetate at a concentration of 0.1mM and potassium chloride at a concentration of 0.1M as a growth solution, use an electrochemical method to obtain zinc oxide nanowires with a diameter of 100-300nm and a length of 3-5μm, such as Figure 5 shown. After removing the zinc oxide nanowires from the silicon chip substrate, place them in absolute ethanol to form a uniform dispersion, take 0.1ml of the dispersion (wherein the content of the zinc oxide nanowires is less than 0.1mg) and drop the dispersion onto the silicon substrate with the microelectrodes. On the chip, the external circuit is connected, and a pulse voltage of 1V and 500 Hz is applied to both ends of the nanowire to make the contact with the microelectrode more firmly, that is, a temperature sensor based on zinc oxide nanowire is formed. Exempla...

Embodiment 3

[0024] The silicon wafer substrate with microelectrodes was cleaned with acetone, ethanol and water in sequence, and dried with nitrogen gas. Using an aqueous solution of zinc acetate at a concentration of 0.5mM and potassium chloride at a concentration of 0.1M as a growth solution, use an electrochemical method to obtain zinc oxide nanowires with a diameter of 200-500nm and a length of 4-8μm, such as Figure 7 shown. Remove the nanowires from the silicon wafer substrate and place them in absolute ethanol to form a uniform dispersion, take 0.1ml of the dispersion (wherein the zinc oxide nanowire content is less than 0.1mg) and drop the dispersion onto the silicon wafer with the microelectrode , connect the external circuit, and apply a pulse voltage of 5V and 1000Hz to the two ends of the nanowire to make it more firmly in contact with the microelectrode, that is, to form a temperature sensor based on zinc oxide nanowires. The temperature range of the exemplary measurement ma...

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Abstract

The invention discloses a temperature sensor based on zinc oxide nanowires, belonging to the technical field of nano material application. The sensitive element of the temperature sensor is a zinc oxide nanowire of which the diameter is 60-500nm and the length is 3-50mm. A single zinc oxide nanowire is fixed on a microelectrode, and an external circuit is connected with an electrical measurement instrument. The conductivity of the zinc oxide nanowire can response to the change of the environmental temperature, and electric signals acquired by the electrical measurement instrument is used for determining the environmental temperature, thus achieving the purpose of temperature measurement. The invention has the characteristics of small volume, wide range of temperature measurement, small heat capacity, quick response speed, low cost and the like, and is especially suitable for temperature measurement which has higher requirement on temperature response speed and requires smaller sensor volume such as chip temperature control.

Description

technical field [0001] The invention relates to a temperature sensing device based on zinc oxide nanowires, which belongs to the technical field of nanomaterial application. Background technique [0002] With the popularization of personal computers, mobile phones, PDAs and other electronic products and the upgrading of products, the power consumption and heat dissipation problems of various electronic products have become increasingly prominent. Chip temperature control technology has become a key technology to ensure the stable operation of electronic products. Due to the problems of large size and relatively slow response speed, traditional temperature sensors have inherent deficiencies in areas such as chip temperature control that have high requirements for sensor size and response speed. [0003] Due to the unique physical and chemical properties of nanomaterials, when it is used as a sensor sensitive element, it often has higher sensitivity and response speed than ord...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01K7/16
Inventor 师文生王耀佘广为
Owner TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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