Preparation method for hydrogenated crystalline state nanometer carborundum films under low temperature

A technology of silicon carbide and nanocrystals, applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve problems affecting film properties, defects, high stress and lattice, and achieve the effect of avoiding damage

Inactive Publication Date: 2010-08-18
HEBEI UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Such a high substrate temperature can cause self-doping of the film, redistribution of dopants, high stress, and lattice defects, which can seriously affect the properties of the film
[0004] At present, there is still no literature report on th

Method used

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  • Preparation method for hydrogenated crystalline state nanometer carborundum films under low temperature
  • Preparation method for hydrogenated crystalline state nanometer carborundum films under low temperature
  • Preparation method for hydrogenated crystalline state nanometer carborundum films under low temperature

Examples

Experimental program
Comparison scheme
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Example Embodiment

[0024] Example 1

[0025] The method for preparing hydrogenated nanocrystalline silicon carbide film at low temperature in the first embodiment of the present invention includes the following steps:

[0026] A. Take a single crystal silicon wafer substrate, first clean it with a mixture of acetone and methanol in an ultrasonic cleaner for 3 minutes, then dry it, and then use the volume ratio NH 4 OH: H 2 O 2 : H 2 Soak the mixture of O=1:2:5 for 5 minutes, take it out and rinse with deionized water, and put it in the volume ratio HF:H 2 Soak in the mixed solution of O=1:10 for 1 minute, take it out and rinse with deionized water, dry and place it on the substrate stage of the spiral wave plasma enhanced chemical vapor deposition device;

[0027] B. Use the vacuum pumping system of the spiral wave plasma enhanced chemical vapor deposition device to vacuum the reaction chamber until the pressure in the reaction chamber is lower than 1×10 -4 Pa;

[0028] C. Pass 60sccm of hydrogen into th...

Example Embodiment

[0031] Example 2

[0032] In the second embodiment of the present invention, the method for preparing a hydrogenated nanocrystalline silicon carbide film at a low temperature has the same steps as in embodiment 1, except that the substrate stage is heated to 300°C in step 1-D.

Example Embodiment

[0033] Example 3

[0034] In the third embodiment of the present invention, the method for preparing a hydrogenated nanocrystalline silicon carbide film at a low temperature has the same steps as the embodiment 1, except that the substrate stage is heated to 400°C in step 1-D.

[0035] Examples 1-3 used different substrate temperatures, figure 1 The FTIR spectra of the hydrogenated nanocrystalline silicon carbide films obtained in Examples 1-3 are given. It can be seen that the absorption peaks related to the Si-C stretching mode are located at 793-798 cm. -1 Nearby, using the deconvolution method, for the three films at 500-1200cm -1 The absorption bands within the range are subjected to deconvolution processing, and it is found that they all need the Lorentz peak to fit the spectrum, and the degree of crystallinity increases significantly with the increase of the substrate temperature. This result shows that the deposition of hydrogenated nanocrystalline silicon carbide film can b...

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Abstract

The invention discloses a preparation method for hydrogenated crystalline state nanometer carborundum films under low temperature. The method comprises the following steps: first, placing the rinsed substratum on the substrate plate of the chemical vapor deposition device strengthened by helicon plasma, and then vacuumizing the reaction chamber of the chemical vapor deposition device strengthened by helicon plasma, and rinsing the substrate plate and the internal walls of the chamber by hydrogen plasma; then, reheating the substrate plate and inflating reaction gas into the reaction chamber to adjust the air pressure, and applying magnetic field to the plasma production chamber of the chemical vapor deposition device strengthened by helicon plasma, and turning on the RF power supply to start the deposition of carborundum films to obtain the carborundum films sample; finally, cooling the chamber off to room temperature under the protection of hydrogen and taking out the sample from the chamber to complete the deposition of hydrogenated nanometer crystalline state nanometer carborundum films. Hydrogenated nanometer crystalline state nanometer carborundum films can be prepared by using the method of the invention under a low temperature.

Description

technical field [0001] The invention relates to the field of thin film preparation, especially a method for preparing a hydrogenated nanocrystalline silicon carbide thin film by using a helicon wave plasma-enhanced chemical vapor deposition method under low temperature conditions Background technique [0002] Cubic silicon carbide has great potential in high-frequency, high-power, high-temperature-resistant and radiation-resistant microelectronics and optoelectronic devices due to its wide bandgap, large electron saturation drift rate, high critical avalanche breakdown electric field and high thermal conductivity. Value. In addition, the cubic silicon carbide film, as a silicon-based film, also has broad application prospects in the thin-film solar cell industry. [0003] Since the crystallization of silicon carbide is very difficult under the condition of relatively low substrate temperature, under the background of the existing technology, high-quality cubic silicon carbi...

Claims

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Application Information

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IPC IPC(8): C23C16/32C23C16/455
Inventor 于威路万兵傅广生王春生崔双魁
Owner HEBEI UNIVERSITY
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