Preparation method for hydrogenated crystalline state nanometer carborundum films under low temperature

Abstract

The invention discloses a preparation method for hydrogenated crystalline state nanometer carborundum films under low temperature. The method comprises the following steps: first, placing the rinsed substratum on the substrate plate of the chemical vapor deposition device strengthened by helicon plasma, and then vacuumizing the reaction chamber of the chemical vapor deposition device strengthened by helicon plasma, and rinsing the substrate plate and the internal walls of the chamber by hydrogen plasma; then, reheating the substrate plate and inflating reaction gas into the reaction chamber to adjust the air pressure, and applying magnetic field to the plasma production chamber of the chemical vapor deposition device strengthened by helicon plasma, and turning on the RF power supply to start the deposition of carborundum films to obtain the carborundum films sample; finally, cooling the chamber off to room temperature under the protection of hydrogen and taking out the sample from the chamber to complete the deposition of hydrogenated nanometer crystalline state nanometer carborundum films. Hydrogenated nanometer crystalline state nanometer carborundum films can be prepared by using the method of the invention under a low temperature.

Description

technical field [0001] The invention relates to the field of thin film preparation, especially a method for preparing a hydrogenated nanocrystalline silicon carbide thin film by using a helicon wave plasma-enhanced chemical vapor deposition method under low temperature conditions Background technique [0002] Cubic silicon carbide has great potential in high-frequency, high-power, high-temperature-resistant and radiation-resistant microelectronics and optoelectronic devices due to its wide bandgap, large electron saturation drift rate, high critical avalanche breakdown electric field and high thermal conductivity. Value. In addition, the cubic silicon carbide film, as a silicon-based film, also has broad application prospects in the thin-film solar cell industry. [0003] Since the crystallization of silicon carbide is very difficult under the condition of relatively low substrate temperature, under the background of the existing technology, high-quality cubic silicon carbi...

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Problems solved by technology

Such a high substrate temperature can cause self-doping of the film, redistribution of dopants, high stress, and lattice defects, which can seriously affect the properties of the film

[0004] At present, there is still no literature report on the application of helicon wave plasma enhanced chemical vapor deposition method to grow hydrogenated nanocrystalline silicon carbide film, especially single crystal or polycrystalline cubic silicon carbide film at a lower substrate temperature.

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