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Bismuth/bismuth-antimony extensional superlattice nanowire and preparation method thereof

A nanowire and superlattice technology, which is applied in the field of superlattice nanowires and its preparation, can solve the undisclosed preparation steps of bismuth/bismuth antimony epitaxial superlattice nanowires, and cannot prepare bismuth/bismuth antimony epitaxial superlattice Nanowires, bismuth antimony nanowires and other issues are not disclosed, to achieve the effect of consistent preferred orientation, easy preparation method, and suitable for large-scale industrial production

Inactive Publication Date: 2013-04-03
HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method does not disclose bismuth-antimony nanowires, and does not disclose the specific preparation steps of bismuth / bismuth-antimony epitaxial superlattice nanowires, that is, this method has the disadvantage that neither bismuth-antimony nanowires nor bismuth / Deficiencies of bismuth-antimony epitaxial superlattice nanowires

Method used

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  • Bismuth/bismuth-antimony extensional superlattice nanowire and preparation method thereof
  • Bismuth/bismuth-antimony extensional superlattice nanowire and preparation method thereof
  • Bismuth/bismuth-antimony extensional superlattice nanowire and preparation method thereof

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Embodiment 1

[0024] The specific steps of preparation are as follows: step 1, first dissolve bismuth chloride with a concentration of 0.02M and antimony chloride with a concentration of 0.06M in hydrochloric acid with a concentration of 0.08M to obtain a mixed solution. Then add the tartaric acid with the concentration of 0.25M, the citric acid with the concentration of 0.22M and the sodium chloride with the concentration of 0.1M successively in the mixed solution under stirring, add the glycerol with the concentration of 0.08M after it dissolves, and continue Stir for 1h. Afterwards, adjust the pH value to 0.8 with an alkaline solution to obtain an electrodeposition solution; wherein, the alkaline solution is a sodium hydroxide solution with a concentration of 0.05M (or ammonia water with a concentration of 0.1M). Step 2, use a porous alumina template coated with a gold film on one side as the cathode, place it in an electrodeposition solution at a temperature of 30°C, and conduct electro...

Embodiment 2

[0026] The specific steps of preparation are as follows: step 1, first dissolve bismuth chloride with a concentration of 0.03M and antimony chloride with a concentration of 0.07M in hydrochloric acid with a concentration of 0.09M to obtain a mixed solution. In the mixed solution under stirring, add successively the tartaric acid with the concentration of 0.26M, the citric acid with the concentration of 0.23M and the sodium chloride with the concentration of 0.11M. Stir for 2h. Afterwards, the pH value is adjusted to 0.81 with an alkaline solution to obtain an electrodeposition solution; wherein, the alkaline solution is a sodium hydroxide solution with a concentration of 0.05M. Step 2, use the porous alumina template coated with a gold film on one side as the cathode, place it in an electrodeposition solution with a temperature of 33°C, and conduct electrodeposition under a pulse voltage; wherein, the thickness of the gold film is 180nm, and the porous alumina template The po...

Embodiment 3

[0028] The specific steps of preparation are as follows: step 1, first dissolve bismuth chloride with a concentration of 0.04M and antimony chloride with a concentration of 0.08M in hydrochloric acid with a concentration of 0.1M to obtain a mixed solution. Then add tartaric acid with a concentration of 0.27M, citric acid with a concentration of 0.24M and sodium chloride with a concentration of 0.12M in the mixed solution under stirring. After it dissolves, add glycerol with a concentration of 0.1M, and continue Stir for 3h. Afterwards, the pH value is adjusted to 0.82 with an alkaline solution to obtain an electrodeposition solution; wherein, the alkaline solution is a sodium hydroxide solution with a concentration of 0.05M. Step 2, use a porous alumina template coated with a gold film on one side as the cathode, place it in an electrodeposition solution at a temperature of 35°C, and conduct electrodeposition under a pulse voltage; wherein, the thickness of the gold film is 20...

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Abstract

The invention discloses a bismuth / bismuth-antimony extensional superlattice nanowire and a preparation method thereof. The nanowire is a bismuth / bismuth-antimony superlattice nanowire with the diameter of 30-120 nanometers, which is formed by extensionally connecting a bismuth nanowire and a bismuth-antimony nanowire, wherein the lengths of each segment of the bismuth nanowire and the bismuth-antimony nanowire are respectively 3-99 nanometers and 3-99 nanometers; and the bismuth-antimony nanowire contains 80-50 percent of bismuth and 20-50 percent of stibium. The preparation method comprises the following steps of: firstly, preparing an electrodeposition solution by using bismuth chloride, antimony chloride, hydrochloric acid, tartaric acid, citric acid, sodium chloride and glycerol; thenplacing a gold film plated porous alumina template as a cathode into the electrodeposition solution for electrodeposition under two pulse voltages alternately connected in series; and finally, placing the porous alumina template electrodeposited with the bismuth / bismuth-antimony extensional superlattice nanowire into an alkali solution to corrode the alumina template so as to prepare the bismuth / bismuth-antimony extensional superlattice nanowire. The bismuth / bismuth-antimony extensional superlattice nanowire can be widely used in the fields of thermo-electric generation, thermoelectric refrigeration, and the like; in addition, the method is easy to implement and suitable for large-scale industrialized production.

Description

technical field [0001] The invention relates to a superlattice nanowire and a preparation method thereof, in particular to a bismuth / bismuth antimony epitaxial superlattice nanowire and a preparation method thereof. Background technique [0002] Bismuth (Bi)-based one-dimensional thermoelectric materials are due to the highly anisotropic ellipsoidal electron Fermi surface of bismuth, the conduction band overlaps with the small energy band of the valence band (38meV at 77K), and the atomic mass is large, passing through and other elements Such as antimony (Sb), tellurium (Te), tin (Sn), etc. can be combined to make its performance greatly improved and other excellent properties, so it has become the darling of thermoelectric research. At present, people have made some attempts and efforts in order to obtain it. For example, on pages 3087-3089 of the Proceedings II of the Fifth China Functional Materials and Its Application Academic Conference in 2004, it was reported that Li ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/68C30B29/62C30B30/02
Inventor 窦新存李广海雷和畅李亮黄小虎
Owner HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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