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Thin film transistor, method for manufacturing thin film transistor, and display device

A technology of thin film transistors and manufacturing methods, applied in the direction of transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems of small conduction current, limited space, difficulty in improving the mobility of amorphous silicon TFT, etc., and achieve the suppression of jumping , reduced leakage current, and good on-current characteristics

Inactive Publication Date: 2010-10-13
SHARP KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, various parts of the liquid crystal display device have been improved, but in the amorphous silicon TFT, there is a very low mobility as low as 0.5 cm 2 / Vs or so, the problem of small conduction current
However, it is difficult to improve the mobility of amorphous silicon TFTs, and there is limited space for improving the performance of liquid crystal display devices by improving amorphous silicon TFTs.

Method used

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  • Thin film transistor, method for manufacturing thin film transistor, and display device
  • Thin film transistor, method for manufacturing thin film transistor, and display device
  • Thin film transistor, method for manufacturing thin film transistor, and display device

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Experimental program
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Embodiment approach 1

[0066] figure 1 It is a cross-sectional view schematically showing the structure of the thin film transistor 10 according to the first embodiment of the present invention. Such as figure 1 As shown, the thin film transistor 10 is an inverted staggered TFT having a bottom gate structure, which includes: a gate electrode 12 formed on a glass substrate 11; a gate insulating layer 13 formed on the glass substrate 11 to cover the gate electrode 12 ; the microcrystalline silicon layer 14 as an active layer formed on the gate insulating layer 13; the contact layers 15 (first contact layer) and 16 (second contact layer) formed on the microcrystalline silicon layer 14; source electrode 17 and drain electrode 18 on contact layer 15 and contact layer 16 ; and channel protection layer 19 .

[0067] The microcrystalline silicon layer 14 has an upper surface 14a and a lower surface 14b substantially parallel to the substrate surface (the surface of the glass substrate 11 or the substrat...

Embodiment approach 2

[0114] Next, a thin film transistor 50 according to a second embodiment of the present invention will be described.

[0115] Figure 4 is a cross-sectional view schematically showing the thin film transistor 50 . Such as Figure 4 As shown, the thin film transistor 50 is a staggered TFT with a top gate structure, which includes: a contact layer (first contact layer) 55 and a contact layer (second contact layer) 56 formed on a glass substrate 51; Silicon oxide layers (insulating layers) 61 and 62 on the layers 55 and 56; the microcrystalline silicon layer 54 as an active layer formed on the glass substrate 51 to cover a part of the silicon oxide layers 61 and 62; formed on the microcrystalline silicon layer The gate insulating layer 53 on the gate insulating layer 54; and the gate electrode 52, the source electrode 57 and the drain electrode 58 formed on the gate insulating layer 53.

[0116] The microcrystalline silicon layer 54 has an upper surface 54a and a lower surface ...

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Abstract

Disclosed is a thin film transistor having a large on-current and a reduced off-current, which can be produced with high production efficiency. Specifically disclosed is a thin film transistor comprising a gate electrode, a microcrystalline silicon layer containing microcrystalline silicon and having an upper surface and a lower surface parallel to the substrate surface and end surfaces between the upper surface and the lower surface, a first and second contact layer each formed in contact with the microcrystalline silicon layer and containing impurities, a source electrode formed in contact with the first contact layer, and a drain electrode formed in contact with the second contact layer. At least one of the first and second contact layers is in contact with the end surfaces of the microcrystalline silicon layer without touching the upper surface and the lower surface thereof.

Description

technical field [0001] The present invention relates to a thin film transistor (TFT), and more specifically relates to a thin film transistor used in display devices such as liquid crystal display devices and organic EL display devices. Background technique [0002] Conventionally, as a TFT (Thin Film Transistor: Thin Film Transistor) for an active matrix substrate used in a display device such as a liquid crystal display device, a TFT (amorphous silicon TFT) using amorphous silicon for the semiconductor layer, and a low-temperature crystallization Silicon TFT (low temperature crystallized silicon TFT). [0003] The low-temperature crystallized silicon TFT has high mobility of electrons and voids in the semiconductor layer and a large conduction current, so it has the advantage of being able to charge the pixel capacitance of a liquid crystal display device in a short switching time, and it also has the advantage of being able to Part or all of the peripheral circuits such ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L29/786
CPCH01L29/66765H01L29/78675H01L29/78633H01L29/78678H01L29/66757
Inventor 守口正生齐藤裕一希达亚特·奇斯达琼奴
Owner SHARP KK