Method for intermittently growing single-layer Ge quantum dots with high dimensional homogeneity on buffer layer by landfill
A technology of buffer layer and quantum dots, which is applied in the direction of coating, ion implantation plating, metal material coating technology, etc., to achieve the effects of good controllability, easy industrial production, and low production cost
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Embodiment 1
[0024] The equipment used is the ion beam sputtering chamber of the FJL560III type ultra-high vacuum multi-target magnetron and ion beam combined sputtering equipment, and a Kaufman ion gun is placed in the growth chamber. The target materials used are 5N (99.999% or more) high-purity Ge square target and high-purity silicon square target, and the sputtering gas is 5N (99.999% or more) high-purity argon. The Si base material used is an N-type single crystal Si sheet with a crystal orientation of (100), polished on one side, and has a resistivity of 0.001Ω·m˜0.005Ω·m. For ultrasonic cleaning, a commercially available ultrasonic cleaner was used. specifically is:
[0025] 1. Treatment of silicon substrate materials
[0026] A. Select the Si substrate material whose crystal orientation is (100), and wash it successively with toluene, acetone, and dehydrated alcohol for 15 minutes to remove organic and inorganic impurities on the substrate surface;
[0027] B. Wash the cleaned ...
Embodiment 2
[0036] The equipment and materials used are all the same as in Example 1. The specific steps are:
[0037] 1. Treatment of silicon substrate materials:
[0038] Same as Example 1.
[0039] 2. Ion beam intermittent sputtering self-organized quantum dots
[0040] A. Dry the pretreated silicon substrate material with high-purity nitrogen, and place it in the sputtering chamber until the background vacuum degree of the sputtering chamber is less than 2.0×10 -4 Pa, adjust the temperature to 500°C and keep it for 30 minutes, fill the sputtering chamber with Ar gas with a purity of 5N, so that the pressure is 2.0×10 -2 Pa;
[0041] B. At a temperature of 700°C, a beam current of 14mA, an argon ion energy of 1100eV, a discharge voltage of 80V, and a sputtering pressure of 2.0×10 -2 Under the condition of Pa, a Si buffer layer with a thickness of 15nm was firstly sputtered. Keep in situ for 5 minutes and then sputter a 15nm thick Si buffer layer. After Si growth, keep for 10min, ...
Embodiment 3
[0044] The equipment and materials used are all the same as in Example 1. The specific steps are:
[0045] 1. Treatment of silicon substrate materials:
[0046] Same as Example 1.
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