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Method for producing a compound semiconductor MMIC (Monolithic Microwave Integrated Circuit) chip on silicon substrate

A silicon substrate and compound technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of power dissipation, microwave power transmission, high cost, etc., to ensure mechanical strength, reduce cost, and reduce power loss Effect

Active Publication Date: 2010-10-27
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] However, silicon as a substrate material also brings a problem, that is, it is difficult and costly to make a high-resistance silicon substrate material.
For MMIC, if the resistivity of the substrate is not high enough, the coupling effect of the substrate will cause a large amount of power to be dissipated by the substrate, and the useful microwave power cannot be transmitted, which reduces the efficiency of the MMIC.

Method used

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  • Method for producing a compound semiconductor MMIC (Monolithic Microwave Integrated Circuit) chip on silicon substrate
  • Method for producing a compound semiconductor MMIC (Monolithic Microwave Integrated Circuit) chip on silicon substrate
  • Method for producing a compound semiconductor MMIC (Monolithic Microwave Integrated Circuit) chip on silicon substrate

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Embodiment 1

[0039] A kind of technology that prepares compound semiconductor MMIC structure on silicon substrate by dry method, its processing step comprises:

[0040] In the first step, silicon oxide is deposited on the surface of the silicon substrate with a thickness of 300-2000nm.

[0041] In the second step, a window exposing the silicon substrate is obtained by photolithography and etching on the silicon oxide for material growth of active devices.

[0042] In the third step, the transition layer and the compound single crystal semiconductor material are grown by selective epitaxy in the window, and the total thickness of the epitaxial layer is the same as that of the oxide layer.

[0043] The fourth step is to make active devices, that is, transistors, from compound single crystal semiconductor materials, and complete the patterning of the first layer of metal. The first layer of metal realizes the functionalization of transistors and is used as the bottom of spiral inductors and c...

Embodiment 2

[0049] A process for preparing compound semiconductor MMIC structures on silicon substrates by wet etching, the process steps comprising:

[0050] In the first step, silicon oxide is deposited on the surface of the silicon substrate with a thickness of 300-2000nm.

[0051] In the second step, a window exposing the silicon substrate is obtained by photolithography and etching on the silicon oxide for material growth of active devices.

[0052]In the third step, the transition layer and the compound single crystal semiconductor material are grown by selective epitaxy in the window, and the total thickness of the epitaxial layer is the same as that of the oxide layer.

[0053] The fourth step is to make active devices, that is, transistors, from compound single crystal semiconductor materials, and complete the patterning of the first layer of metal. The first layer of metal realizes the functionalization of transistors and is used as the bottom of spiral inductors and capacitors....

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Abstract

The invention discloses a method for producing a compound semiconductor MMIC (Monolithic Microwave Integrated Circuit) chip on a silicon substrate, which belongs to the technical field of semiconductor microwave integrated circuits. The method comprises the following steps: realizing the photoetching on patterns on the back side of the substrate by using a three-dimensional aligning photoetching technology; removing the silicon substrate part in the middle of each MMIC chip in wafers by using a dry method or a wet method for etching; and retaining the edge parts of the periphery of each MMIC chip and the silicon substrate below a pressure welding block to maintain the mechanical strength required for backend reduction and dicing package, which is beneficial to reducing the power loss as result from the coupling of the substrate, improving the power efficiency of producing the compound semiconductor MMIC chip on the silicon substrate and also reducing the cost.

Description

technical field [0001] The invention belongs to the technical field of semiconductor microwave integrated circuits, in particular to a method for manufacturing a compound semiconductor MMIC chip on a silicon substrate. Background technique [0002] Compound semiconductor materials, such as GaAs, GaN, InP, etc., have higher electron mobility or wider forbidden band width than silicon materials, and can be used to make ultra-high-speed circuits, and can be used in extreme applications such as high voltage and high temperature. The condition is the second-generation semiconductor material after silicon and germanium. The cut-off frequency and highest oscillation frequency of devices made of these compound semiconductor materials can reach hundreds of gigahertz, and are widely used in microwave and communication systems. [0003] In communication systems, monolithic microwave integrated circuits (MMICs) have always played an important role. In today's microwave broadband and u...

Claims

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Application Information

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IPC IPC(8): H01L21/822H01L21/306
Inventor 周卫严利人窦维治韩冰刘志弘
Owner TSINGHUA UNIV
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