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Process for producing liquid crystal display device

A technology of a liquid crystal display device and a manufacturing method, which is applied in the direction of cable/conductor manufacturing, ion implantation plating, coating, etc., and can solve the problem of lowering the surface resistance of a transparent conductive film, lowering the visual confirmation of a liquid crystal display device, and lowering light transmittance etc. to achieve excellent visual confirmation, high transparency, and low power consumption

Inactive Publication Date: 2010-11-10
ULVAC INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, in this case, although the surface resistance of the obtained transparent conductive film was definitely lowered, a little metallic luster was generated on the surface thereof
Therefore, there is a problem that the light transmittance is lowered, and the visibility of the liquid crystal display device is lowered.

Method used

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  • Process for producing liquid crystal display device
  • Process for producing liquid crystal display device
  • Process for producing liquid crystal display device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0083] Figure 5 is the H when there is no heating to form a film 2 Curve of the effect of O gas (water vapour). Figure 5 In , A represents the transmittance of the zinc oxide-based transparent conductive film when no reactive gas is introduced. Figure 5In, B stands for H 2 The partial pressure of O gas reaches 5×10 -5 Torr's way only imports H 2 The transmittance of the zinc oxide-based transparent conductive film in the presence of O gas. Figure 5 In, C stands for O 2 The partial pressure of gas reaches 1×10 -5 Torr's way only imports O 2 The transmittance of the zinc oxide-based transparent conductive film in air. As the cathode, a parallel plate type cathode to which a direct current (DC) voltage is applied was used.

[0084] When no reactive gas was introduced, the film thickness of the transparent conductive film was 207.9 nm, and the resistivity was 1576 μΩcm.

[0085] When importing only H 2 In the case of O gas, the film thickness of the transparent cond...

Embodiment 2

[0091] Figure 6 is the H when the substrate temperature is 250°C and the film is formed by heating 2 Curve for the effect of O gas (water vapour). Figure 6 In , A represents the transmittance of the zinc oxide-based transparent conductive film when no reactive gas is introduced. Figure 6 In, B stands for H 2 The partial pressure of O gas reaches 5×10 -5 Torr's way only imports H 2 The transmittance of the zinc oxide-based transparent conductive film in the presence of O gas. Figure 6 In, C stands for O 2 The partial pressure of gas reaches 1×10 -5 Torr's way only imports O 2 The transmittance of the zinc oxide-based transparent conductive film in air. As the cathode, a parallel plate type cathode to which a direct current (DC) voltage is applied was used.

[0092] When no reactive gas was introduced, the film thickness of the transparent conductive film was 201.6 nm, and the resistivity was 766 μΩcm.

[0093] When importing only H 2 In the case of O gas, the fil...

Embodiment 3

[0097] Figure 7 It means that for the heating film formation with the substrate temperature set at 250°C, H is introduced at the same time 2 Gas and O 2 The curve of the effect of gas time. Figure 7 In, A means H 2 The partial pressure of gas reaches 15×10 -5 Torr, O 2 The partial pressure of gas reaches 1×10 -5 The Torr method, the transmittance of the zinc oxide-based transparent conductive film when two gases are simultaneously introduced. Figure 7 Among them, B means O 2 The partial pressure of gas reaches 1×10 -5 Torr's way only imports O 2 The transmittance of the zinc oxide-based transparent conductive film in air. As the cathode, a parallel plate type cathode in which a direct current (DC) voltage and a high frequency (RF) voltage can be superimposed is used.

[0098] While importing H 2 Gas and O 2 In the case of air, the film thickness of the transparent conductive film was 211.1 nm.

[0099] In import only O 2 In the case of air, the film thickness ...

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Abstract

Disclosed is a process for producing a liquid crystal display device comprising at least a pair of substrates holding a liquid crystal layer therebetween and a pixel electrode superimposed on the liquid crystal layer side of the pair of substrates. The pixel electrode in at least one of the pair of substrates is formed of a transparent electroconductive film comprising zinc oxide as a fundamental constituent material. The production process comprises the step of forming a zinc oxide-type transparent electroconductive film on the substrates by sputtering using a target of a zinc oxide-type material to form the pixel electrodes. In the step of forming the pixel electrodes, sputtering is carried out in an atmosphere containing two or three materials selected from the group consisting of hydrogen gas, oxygen gas, and water vapor.

Description

technical field [0001] The present invention relates to a method of manufacturing a liquid crystal display device, and more specifically, to a method of manufacturing a transparent conductive film used as a pixel electrode of a liquid crystal display device. [0002] This application claims priority based on Japanese Patent Application No. 2008-013680 for which it applied in Japan on January 24, 2008, and takes in the content here. Background technique [0003] For a long time, using ITO (In 2 o 3 -SnO 2 ) as a material for a transparent conductive film constituting a pixel electrode of a liquid crystal display device (LCD). However, indium (In), which is a raw material of ITO, is a rare metal, and it is expected that the cost will rise due to difficulty in obtaining it in the future. Therefore, an abundant and inexpensive ZnO-based material has attracted attention as a material of a transparent conductive film replacing ITO (for example, refer to Patent Document 1). Zn...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/1343C23C14/08C23C14/34H01B13/00
CPCC23C14/086G02F1/1303G02F1/13439
Inventor 高桥明久石桥晓
Owner ULVAC INC
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