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Memory and gain unit eDRAM (embedded Dynamic Random Access Memory) unit combined by bit lines

A bit line and write word line technology, applied in the field of dynamic random access memory, can solve the problem of large cell area, achieve high storage density, good compatibility, and less destructive read operation characteristics

Inactive Publication Date: 2013-04-10
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, since it includes two word lines (read word line, write word line) and two bit lines (read bit line, write bit line), although the storage density can reach twice that of eSRAM, the cell area is still large

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  • Memory and gain unit eDRAM (embedded Dynamic Random Access Memory) unit combined by bit lines
  • Memory and gain unit eDRAM (embedded Dynamic Random Access Memory) unit combined by bit lines
  • Memory and gain unit eDRAM (embedded Dynamic Random Access Memory) unit combined by bit lines

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Embodiment Construction

[0025] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0026] figure 2 Shown is a schematic structural diagram of a gain unit eDRAM unit according to an embodiment of the present invention. like figure 2As shown, the gain unit eDRAM unit 210 includes a write MOS transistor 201, a read MOS transistor 202, a write word line (Write WordLine, WWL) 205, a read word line (Read Word Line, RWL) 206, a bit line (Bit Line, BL) 207 and the equivalent parasitic capacitance 204. The equivalent parasitic capacitance 204 is represented by a dotted line, because the equivalent parasitic capacitance 204 is not an independent capacitive device, it is the parasitic capacitance of the active region of the write MOS transistor 201 or the gate capacitance of the read MOS transistor 202, or both Therefore, there is no need for a specia...

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Abstract

The invention belongs to the technical field of dynamic random access memories (DRAM) and particularly provides a memory and a gain unit eDRAM unit combined by bit lines. The gain unit eDRAM unit comprises an MOS (Metal-Oxide Semiconductor) transistor, an MOS writing transistor, a word writing line, a word reading line, an equivalent parasitic capacitor and a bit line, wherein the bit line replaces the bit writing line and a bit reading line of the gain unit eDRAM unit in the prior art, has the advantage of small unit area by only comprising one bit line, and can not influence the memory characteristic of the gain unit eDRAM unit after the bit writing line and the bit reading line are combined. Gain unit eDRAM using the gain unit eDRAM unit has the advantage of relative high memory density.

Description

technical field [0001] The invention belongs to the technical field of dynamic random access memory (DRAM), in particular to an embedded dynamic random access memory (eDRAM) technology, in particular to a gain unit eDRAM ( Gain Cell eDRAM) unit and its memory. Background technique [0002] Memory can be divided into off-chip memory and embedded memory. Embedded memory is a basic part of the chip that is integrated in the chip with various logic and mixed signal IP modules in the chip system. Embedded memory includes embedded static random access memory (eSRAM) and embedded dynamic random access memory (eDRAM). Among them, eDRAM has the characteristics of small cell area because its unit only includes one transistor and one capacitor, compared with the six transistors of eSRAM unit . [0003] However, the difficulty of traditional eDRAM is that the manufacture of its capacitors is generally not compatible with the standard MOS process, so the DRAM process is very different ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/401G11C11/409G11C11/4063
Inventor 林殷茵薛晓勇
Owner FUDAN UNIV