Semiconductor element module and method for manufacturing the same

Abstract

Provided are a semiconductor element module which is excellent in terms of thermal connection and electric connection, the cooling performance of which can be fully secured, and which is highly reliable, and a method for manufacturing the same. The semiconductor element module comprises an IGBT (2) and a diode (3) on both surfaces of which an electrode is formed, a ceramic substrate (7) on the surface of which wiring circuit layers (4, 5) which are bonded to one surface of the IGBT (2) and the diode (3) are formed and the thermal conductivity of which is high, a ceramic substrate (8) on the surface of which a wiring circuit layer (6) which is bonded to the other surfaces of the IGBT (2) and the diode (3) is formed and the thermal conductivity of which is high, and a sealing member (11) which is sandwiched between the outer edges of the ceramic substrates (7, 8) and with which the inside is sealed. These members are bonded by an ordinary temperature bonding method.

Description

technical field [0001] The present invention relates to a semiconductor element module and a manufacturing method thereof, and is suitable for semiconductor elements having high output such as power transistors. Background technique [0002] For example, power semiconductor elements with large output and high heat generation, such as insulated gate bipolar transistors (insulated gate bipolar transistors, IGBTs), need to be cooled to ensure their functional reliability and lifetime. In recent years, the use of such power semiconductor elements has been expanding, for example, they have been used to control motors of electric vehicles and the like. Therefore, in addition to improving output, improvements in reliability, life, and the like are required. [0003] Patent Document 1: Japanese Patent Application Publication No. Heisei 6-188363 [0004] Patent Document 2: International Patent Application Publication No. 98 / 43301 [0005] The problem to be solved by the present in...

AI Technical Summary

Problems solved by technology

Therefore, there is a problem that the expected heat dissipation performance cannot be obtained

[0009] In addition, in the above-mentioned module structure, the limitations of heat resistance, thermal cycle resistance, and vibration resistance of solder and lead wires used for wiring, resin used for packaging, etc. determine the limits of improvement of the entire module

Since the heat resistance, heat cycle resistance, and vibration resistance required for electric vehicles, etc. cannot be satisfied, these module structures cannot ensure sufficient reliability

For example, the components inside the module may be intact, but the wiring may be damaged, thereby impairing the function of the module as a whole, thus reducing the reliability and life of the module

[0010] In addition, with the above-mentioned module structure, etc., there are problems in achieving both heat dissipation performance and reliability at the point of bonding between the substrate and the element and / or between the substrate and the heat sink

For example, the use of adhesives for bonding can lead to issues with slightly lower thermal conductivity and increased process steps

Bonding using diffusion bonding or anodic bonding may have the following problems: the types of materials used for bonding objects are limited, and since heating is involved in bonding, a certain cooling time is required, and it also causes thermal influence on the module (generates thermal stress)

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