Manufacturing method of inversed AlGaInP light emitting diode

Abstract

The invention discloses a manufacturing method of an inversed AlGaInP light emitting diode. A buffer layer, a cut-off layer, a second conduction-type ohm contact layer, a second conduction-type limiting layer, an active layer, a first conduction-type limiting layer and a first conduction-type window layer successively are subject to epitaxial growth on a temporary substrate to form an epitaxial luminescent layer; a media layer grows on the epitaxial luminescent layer, the graph of a cutting path is defined, and the media layer out of the cutting path is etched; the width of the media layer onthe cutting path is more than that of the tool edge of a diamante for cutting; a reflector is evaporated on the epitaxial luminescent layer; the back and the upper surface of a permanent substrate are respectively manufactured with a first ohm contact electrode and an evaporation bonding layer; the reflector is bonded with the bonding layer, and the temporary substrate, the buffer layer and the cut-off layer are removed; the second conduction-type ohm contact layer is manufactured with a second ohm contact electrode; and the obtained product is cut to obtain a chip. The invention solves the electric leakage problem brought by cutting, does not need to etch the epitaxial layer on the cutting path, simplifies the manufacturing technology and improves the technology stability.

Description

technical field [0001] The invention relates to a method for preparing a photoelectric semiconductor light-emitting device, in particular to a method for manufacturing an inverted aluminum gallium indium phosphide light-emitting diode. Background technique [0002] A light emitting diode (Light Emitting Diode, LED) is a luminescent light-emitting component. Its light-emitting principle is to apply a current to the III-V compound semiconductor material, and use the combination of electrons and holes in the diode to convert energy into the form of light. It glows when released, and won't get hot like an incandescent bulb after a long time of use. The advantages of light-emitting diodes are small size, long life, low driving voltage, fast response rate, and excellent shock resistance. product. [0003] Taking aluminum gallium indium phosphide (AlGaInP) light-emitting diodes as an example, aluminum gallium indium phosphide is a four-element compound semiconductor material, whi...

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Problems solved by technology

(Such as Figure 2b) The width of the cutting track is greater than the thickness of the diamond blade , the diamond knife will not touch the epitaxial layer during cutting, thereby avoiding bringing the metal layer 202 on the substrate 201 to the sidewalls of the epitaxial layers 207, 206, 205, 204 and 203, and avoiding serious electric leakage; However, dry etching will produce etching reactants that will adhere to the sidewall of the epitaxial layer and need to be removed by a solution; the solution will also etch the epitaxial layer when removing the product of dry etching, making the edge of the dicing line untidy, so it is difficult to accurately control The area of ​​the light-emitting area; therefore, the above-mentioned process is complicated, and it is difficult to strictly repeat the process in mass production, resulting in unstable process

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