High-sensitivity uncooled infrared detector

An uncooled infrared and detector technology, applied in the field of infrared detectors, can solve the problems of increased cost, complex process, thermal isolation of detectors and unreasonable infrared absorption layer structure design, etc., and achieves good stability, reliability, cost and so on. The effect of low and simple preparation process

Active Publication Date: 2011-11-30
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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Problems solved by technology

Although there are reports on the use of P(VDF-TrFE) to develop infrared detectors in the world [Sensors and Actuators A: Physical, 22, (1989) 503], due to the thermal isolation of the detector and the unreasonable design of the infrared absorbing layer structure, it is difficult to Obtain highly sensitive detectors, and the process is complicated, which increases the cost

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  • High-sensitivity uncooled infrared detector
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  • High-sensitivity uncooled infrared detector

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Embodiment Construction

[0029] The following will be combined figure 1 , to express the specific implementation method of the present invention:

[0030] (1) A polyester film with a thickness of 2.5 microns is selected as the substrate (see figure 1 Medium 1).

[0031] (2) Bottom electrode preparation, evaporate one deck metal aluminum film on substrate film as bottom electrode, and electrode is bar shape, and width is 0.5 millimeter, and thickness 70 nanometers, (see figure 1 Medium 2).

[0032] (3) P(VDF-TrFE) thin film preparation, the P(VDF-TrFE) thin film material is grown on the polyester film substrate with the bottom electrode prepared using the Langmuir-Blodgett (LB) technique. Specifically, weigh 0.02 g of P(VDF-TrFE, 70:30mol%), transfer to a 250 ml flask, add 100 ml of dimethyl sulfoxide (DMSO), stir at 80°C for 3 hours, and cool to room temperature . The LB thin film growth system is used to grow P(VDF-TrFE) polymer film. The single-layer film is pulled under the surface pressure of...

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Abstract

The invention discloses a high-sensitivity uncooled infrared detector. In the detector, a copolymer of polyvinylidene fluoride and trifluoroethylene is used as a pyroelectric material and grown on a polyester material substrate, on which a metal bottom electrode is prepared, by a Langmuir-Blodgett method; then a top metal electrode is grown on the surface of the material to form a capacitor structure; and a poly-3,4-ethylenedioxythiophene / polystyrene sulfonate conductive polymer is grown on the top electrode to serve as an infrared absorbing layer.

Description

technical field [0001] The invention relates to infrared detector technology, in particular to a high-sensitivity uncooled infrared detector. Background technique [0002] Uncooled infrared detection technology is a technology that does not require a refrigeration system to sense the output of infrared radiation, and can be widely used in many fields such as national defense, aerospace, medicine, and production monitoring. The pyroelectric effect is produced by pyroelectric materials due to the spontaneous polarization change with temperature. The pyroelectric detector is a thermal detector developed based on the pyroelectric effect. Pyroelectric detectors are pyroelectric materials that convert heat into electrical signals by absorbing infrared rays, thereby determining whether infrared radiation exists. Pyroelectric detector is an uncooled infrared detector with excellent performance, which is used in various sensing technologies because of its lightness and simple struc...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01J5/00G01J5/10G01J5/02
Inventor 王建禄孟祥建孙璟兰褚君浩韩莉
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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