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Method for preparing surface chemical mechanical polishing liquid for indium antimonide material

A surface chemical and mechanical polishing technology, which is applied in the direction of polishing compositions containing abrasives, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problem of reducing production efficiency and production quality, affecting the normal use of polishing fluid, coagulation of silica sol or Solve problems such as dissolution to achieve the effect of improving quality, avoiding coagulation and dissolution phenomena, and avoiding gel or dissolution

Inactive Publication Date: 2013-06-05
TIANJIN JINGLING MICROELECTRONIC MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Tianjin Jingling Electronic Material Technology Co., Ltd. proposes a polishing liquid preparation method in which various components are fed into a container tank through a mass flowmeter under the power of a vacuum negative pressure in the environment of a thousand-class clean room. Coagulation or dissolution of silica sol often occurs in the process of polishing liquid. On the one hand, it is analyzed that the reason is the influence of metal ions. It affects the structure of silica sol, reduces production efficiency and production quality, and seriously affects the normal use of polishing fluid

Method used

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  • Method for preparing surface chemical mechanical polishing liquid for indium antimonide material

Examples

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Effect test

Embodiment 1

[0027] (1) Clean the closed reaction kettle made of polypropylene material and the feeding pipeline three times, each time using 2000g of ultrapure water with a resistance of 18MΩ, and the resistance of the waste liquid after cleaning is not lower than 16MΩ.

[0028] (2) 400g of hydroxyethylethylenediamine is added to the cleaned polypropylene material airtight reactor of step (1) through the pipeline after step (1), and the airtight reactor is vacuumized to make the airtight reactor be negative. Press the complete vortex state to form a complete vortex stirring. While performing complete vortex stirring, 200g of FA / O active agent and 200g of FA / O chelating agent are sequentially pumped into the closed reaction kettle of polypropylene material through the cleaned pipeline under the action of negative pressure.

[0029] (3) Mix the SiO with complete vortex stirring 2 The mass percent concentration is 50%, the particle diameter is 15-25nm, the silica sol 3200g of Mohs hardness ...

Embodiment 2

[0035] (1) Clean the closed reaction kettle made of polyethylene material and the feeding pipeline four times, each time using 2000g of ultrapure water with a resistance of 18MΩ, and the resistance of the waste liquid after cleaning is not lower than 16MΩ.

[0036] (2) Add 120 g of triethanolamine into the cleaned closed polyethylene reaction kettle, and vacuumize the closed reaction kettle so that the inside of the closed reaction kettle is in a negative pressure and complete vortex state, forming complete vortex stirring. Mix O with thorough vortexing π -720g and 4g of FA / O chelating agent were added to the closed polyethylene material reaction kettle through the cleaned pipeline in turn.

[0037] (3) Mix the SiO with complete vortex stirring 2The mass percent concentration is 50%, particle diameter is 15-25nm, the silica sol 3856g of Mohs hardness 7 is sucked in the polyethylene material airtight reactor through the pipeline after step (1) cleaning, and the polishing liqui...

Embodiment 3

[0039] (1) Clean the closed polymethyl methacrylate reaction kettle and the feed pipeline three times, each time using 2000 g of ultrapure water with a resistance of 18 MΩ, and the resistance of the waste liquid after cleaning is not lower than 16 MΩ.

[0040] (2) 200g of tetramethylammonium hydroxide is added to the cleaned polymethyl methacrylate airtight reactor through the cleaned pipeline, and the airtight reactor is evacuated so that the closed reactor is in a negative pressure and complete vortex state, forming Complete vortex stirring; while performing complete vortex stirring, add 80g of O-20 and 72g of FA / O chelating agent into the closed polymethyl methacrylate reaction kettle through the cleaned pipeline in sequence.

[0041] (3) Mix the SiO with complete vortex stirring 2 The mass percent concentration is 50%, the particle diameter is 15-25nm, the silica sol 3648g of Mohs hardness 7 is pumped in the solution of step (2) through the pipeline after step (1) cleaning...

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Abstract

The invention discloses a method for preparing a surface chemical mechanical polishing liquid for indium antimonide material, which aims to provide a method for preparing polishing liquid by negative-pressure vortex stirring so that the gelation or dissolution of silica sol can be avoided, harmful substances, such as organic substances, metallic ions, large grains and the like can be prevented from entering the polishing liquid simultaneously, and the purity of the polishing liquid can be improved. The preparation method comprises the following steps of: cleaning a transparent and closed reaction kettle and a feeding pipeline by using ultrapure water with the resistance of more than 18 megohms so that the resistance of cleaned waste liquid is not lower than 16 megohms; adding amine alkaliinto the cleaned transparent and closed reaction kettle, and vacuumizing the transparent and closed reaction kettle so that the inside of the transparent and closed reaction kettle is in the state ofnegative-pressure complete vortexes to form complete vortex stirring; sequentially adding an active agent and an FA / O chelating agent into the transparent and closed reaction kettle while carrying out complete vortex stirring; and pumping the silica sol into the transparent and closed reaction kettle while carrying out complete vortex stirring, and carrying out full and complete vortex stirring for 5-15 minutes to obtain the polishing liquid with the pH value of 9-12.

Description

technical field [0001] The invention relates to a method for preparing a surface chemical mechanical polishing liquid of an indium antimonide material. Background technique [0002] The indium antimonide material (InSb) staring infrared focal plane device responding in the 1-5.5 μm band has the advantages of high sensitivity, mature technology, and good cost-effectiveness. At present, it occupies a dominant position in the field of military staring infrared. For example, in the US ballistic missile defense system and several critical conventional tactical weapon systems, InSb focal plane devices are widely used in guidance and thermal imaging devices. In terms of civil use, InSb thermal imaging technology is widely used in medical diagnosis, fire protection, rescue, industrial monitoring, forest protection and other fields. In the application of air-to-air imaging guidance, the 64×64 element InSb staring infrared focal plane array is given priority. The infrared focal plan...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/304C09G1/02
Inventor 刘玉岭王娟李晖
Owner TIANJIN JINGLING MICROELECTRONIC MATERIALS CO LTD