Film deposition method

Abstract

The invention discloses a film deposition method, which comprises the following steps of: oppositely placing an anode plate and a cathode plate in parallel in a reaction chamber, wherein the surface of the cathode plate, which faces to the anode plate, is provided with a sacrifice layer; placing a conducted base plate or a base plate with a conduction layer on which the conduction layer contacts the surface of the anode plate on the surface of the anode plate, which faces to the sacrifice layer; introducing hydrogen; and building a direct-current electric field between the anode plate and the cathode plate, exciting the hydrogen into a plasma and etching the sacrifice layer, and depositing a film which is based mainly on sacrifice layer substances on the surface of the base plate. By using the method, raw material gas including film substances does not need providing from outside, and the direct-current electric field is used for excitation, which greatly simplifies equipment and process for manufacturing large-area microcrystalline silicon photoelectric devices.

Description

technical field [0001] The invention relates to the technical field of photovoltaic solar cells, in particular to a thin film deposition method. Background technique [0002] With the increasing shortage of energy, the development and utilization of renewable green energy has attracted more and more attention, especially the utilization of solar energy has attracted the attention of the world. As a solar energy conversion medium, solar cells, especially the silicon-based thin-film solar cells that have emerged in recent years, represent the development trend of photovoltaic technology with their advantages of large area, low cost, deposition on light and thin substrates, and easy laying and installation. [0003] Thin-film solar cells are used to convert light energy emitted by light sources such as sunlight, lamps or fluorescent lights into electrical energy. This conversion is generated by the photovoltaic (photoelectric) effect of semiconductor materials. When light irrad...

AI Technical Summary

Problems solved by technology

[0006] Although the PECVD process has the characteristics of simple process and high deposition efficiency, it is difficult to obtain large-area substrates (for example, with an area greater than 0.7m 2 ) when depositing a large area of ​​nanocrystalline silicon film on the surface, the consistency and thickness uniformity of the film layer will be significantly reduced

In addition, the traditional PECVD process is to provide reaction gas (usually a source gas mixture of silane and hydrogen) to the reaction chamber from the outside, and the reaction gas is in the reaction chamber, especially a large reaction chamber for large-area substrate deposition (for example, the patent No. The distribution uniformity in the large-scale PECVD deposition equipment described in the Chinese patent of 200820008274.5 is difficult to guarantee, and it is easy to cause impurity pollution, which affects the uniformity and consistency of the nanocrystalline silicon film

In addition, the electrode structure of traditional PECVD equipment is complex, and in order to obtain a high deposition rate and a suitable degree of crystallization, a large gas flow rate is required, and the gas consumption is large

The complexity of equipment and high consumption of raw materials increase production costs and significantly reduce product competitiveness

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