Oxidation treatment process of crystalline silicon solar cell

A technology of solar cells and oxidation treatment, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of poor uniformity and repeatability of oxide films, slow dry oxygen oxidation rate, increased production costs, etc., to achieve better shielding effect, photoelectric Improved conversion efficiency and ease of operation

Inactive Publication Date: 2011-04-20
CSI CELLS CO LTD +1
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Problems solved by technology

[0005] However, the existing dry oxygen oxidation rate is very slow, and it needs to be kept at a high temperature of 900-1200°C in the oxidation tube for more than 2 hours, and at the same time, a large flow of dry oxygen is introduced to obtain the required process thickness.
Obviously, this long-term oxidation treatment proc

Method used

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Embodiment 1

[0020] An oxidation treatment process for a crystalline silicon solar cell, comprising the steps of:

[0021] (1) Pre-oxidation with elevated temperature and dry oxygen: push the silicon wafer into the oxidation tube, raise the temperature to 850°C, pass through dry oxygen, and carry out the oxidation reaction, forming a layer of silicon dioxide on the surface of the silicon wafer; the reaction time is 500s, dry Oxygen flow rate is 20L / min

[0022] (2) High-temperature chlorine-doped oxidation: continue to feed dry oxygen, raise the temperature to 900°C, feed trichloroethane, the flow rate of nitrogen carrying trichloroethane is 1.5L / min, the flow rate of dry oxygen is 20L / min, and last for 1500s ;

[0023] (3) Promoting oxidation at constant temperature: keep at 900°C, stop feeding trichloroethane, continue feeding dry oxygen for 800s, and the flow rate of dry oxygen is 20L / min;

[0024] (4) Cool down, stop drying the oxygen, and withdraw the silicon wafer from the oxidatio...

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PUM

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Abstract

The invention discloses an oxidation treatment process of a crystalline silicon solar cell, comprising the following steps: (1) heating dry oxygen pre-oxidation: a silicon wafer is pushed into an oxidation tube, the temperature is increased to 850-900 DEG C, dry oxygen is introduced, oxidation is carried out, and a silicon dioxide layer is formed on the surface of the silicon wafer, wherein the reaction time is 100-600 seconds; (2) high temperature chlorine-doped oxidation: dry oxygen is continuously introduced, the temperature is increased to 900-950 DEG C, trichloroethane is introduced, and the condition is maintained for 1500-2500 seconds; (3) constant temperature propulsive oxidation: the temperature in step (2) is maintained, the introduction of trichloroethane is stopped, dry oxygen is continuously introduced, and the condition is maintained for 300-800 seconds; and (4) temperature reduction: the introduction of dry oxygen is stopped, and the silicon wafer is taken out from the oxidation tube. In the oxidation treatment process provided by the invention, the processing time of the whole process is greatly reduced, and the problems that resource waste is caused by long-time oxidation and the capacity is reduced are avoided, thus having positive realistic significance.

Description

technical field [0001] The invention relates to an oxidation treatment process for crystalline silicon solar cells, belonging to the field of crystalline silicon solar cell manufacturing. Background technique [0002] In today's world, the continuous use of conventional energy has brought about a series of economic and social problems such as energy shortage and environmental degradation, and the development of solar cells is one of the ways to solve the above problems. Therefore, all countries in the world are actively developing solar cells, and high conversion efficiency and low cost are the main trends in the development of solar cells and the goals pursued by technology researchers. [0003] At present, among all kinds of solar cells, crystalline silicon solar cells account for 90% of the market share, among which the conversion efficiency of monocrystalline silicon cells exceeds 17%, and the conversion efficiency of polycrystalline silicon cells exceeds 16%. How to gr...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 党继东王虎辛国军章灵军
Owner CSI CELLS CO LTD
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