Oxidation treatment process of crystalline silicon solar cell
A technology of solar cells and oxidation treatment, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of poor uniformity and repeatability of oxide films, slow dry oxygen oxidation rate, increased production costs, etc., to achieve better shielding effect, photoelectric Improved conversion efficiency and ease of operation
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[0020] An oxidation treatment process for a crystalline silicon solar cell, comprising the steps of:
[0021] (1) Pre-oxidation with elevated temperature and dry oxygen: push the silicon wafer into the oxidation tube, raise the temperature to 850°C, pass through dry oxygen, and carry out the oxidation reaction, forming a layer of silicon dioxide on the surface of the silicon wafer; the reaction time is 500s, dry Oxygen flow rate is 20L / min
[0022] (2) High-temperature chlorine-doped oxidation: continue to feed dry oxygen, raise the temperature to 900°C, feed trichloroethane, the flow rate of nitrogen carrying trichloroethane is 1.5L / min, the flow rate of dry oxygen is 20L / min, and last for 1500s ;
[0023] (3) Promoting oxidation at constant temperature: keep at 900°C, stop feeding trichloroethane, continue feeding dry oxygen for 800s, and the flow rate of dry oxygen is 20L / min;
[0024] (4) Cool down, stop drying the oxygen, and withdraw the silicon wafer from the oxidatio...
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