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Photomask blank, photomask and method for producing photomask

A manufacturing method and photomask technology, which are used in semiconductor/solid-state device manufacturing, optics, opto-mechanical equipment, etc., can solve the problem of difficulty in forming semi-transparent parts at the target position, and achieve the effect of maintaining yield and reducing particles.

Active Publication Date: 2011-04-27
ULVAC INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] However, in the method of the above-mentioned prior art, the light-shielding film and the semi-transparent film are all Cr-based materials, so the light-shielding film and the semi-transparent film are etched by initial wet etching at the same time. It is difficult to form a translucent portion
Various studies have been carried out on semi-transparent film materials that are not etched by Cr-based etchant, but no results have yet been obtained.

Method used

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  • Photomask blank, photomask and method for producing photomask
  • Photomask blank, photomask and method for producing photomask
  • Photomask blank, photomask and method for producing photomask

Examples

Experimental program
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Effect test

Embodiment 1

[0039] A transparent substrate composed of a glass substrate is loaded into a vacuum chamber of a sputtering device, and while the vacuum chamber is evacuated, a sputtering gas composed of Ar gas and O 2 The first reactive gas composed of gas is introduced into the vacuum chamber, the Cr target is sputtered, and an oxide film with a film thickness of 25nm (here, chromium oxide: Cr 2 o 3 film) composed of a translucent phase shift layer 11.

[0040] Then, stop introducing the first reactive gas (O 2 gas), the same Cr target was sputtered with the sputtering gas, and an adhesive layer 12 made of a metal Cr film was formed on the surface of the phase shift layer 11 .

[0041] Then, while introducing sputtering gas into the vacuum chamber, the graphite target in the same vacuum chamber was sputtered to form an etching stopper layer 13 made of a carbon thin film with a film thickness of 10 nm on the surface of the adhesive layer.

[0042] Then, while introducing sputtering gas i...

Embodiment 2

[0067] When removing part of the etching stop layer 13 of the photomask blank 3 having the same structure as the above-mentioned embodiment to expose the surface of the phase shift layer 11, instead of using O 2 For plasma combustion, a 200W UV lamp was used to expose a part of the etch stop layer 13 made of carbon thin film, and irradiated with UV light in the air for 10 minutes to burn and remove the exposed part of the etch stop layer 13 .

[0068] Other processes are identical, have made photomask 8, phase-shift layer 11 (Cr 2 o 3 film) is 25 nm, and the light-shielding layer 14 (CrN film) is 80 nm, the same as before etching. In addition, the number of increased particles of 0.3 μm or more on the photomask was zero.

[0069] In addition, the etch stop layer 13 of the present invention includes, in addition to a carbon thin film composed only of carbon, a carbon thin film containing carbon bonded with hydrogen; a carbon film containing carbon bonded with nitrogen. Carbo...

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Abstract

The invention provides a photomask free of particles attached and a method for producing the photomask. An adhesive layer (12), an etch stop layer (13) and a light shielding layer (14) are laminated on a phase shifting layer (11). When etching solution is used to partially etch the light shielding layer (14), the ongoing etching is prevented via the etch stop layer (13). Then, oxygen plasma is used to remove the etch stop layer at the bottom of an opening formed on the light shielding layer (14). The opening (24) which becomes a phase shifting area is covered by resists, and the phase shifting area (11) which is located at the bottom of the opening and becomes a light transmitting area is removed by using etching solution. The part with residual light shielding layer (14) forms a light shielding area, the photomask obtained. The etching via etching solution is performed after the layers (11)-(14) are all formed, so that no particles are attached.

Description

technical field [0001] The present invention relates to the structure and manufacturing method of a phase shift photomask used when forming patterns on FPD substrates such as liquid crystals and PDPs. Background technique [0002] For existing phase-shift photomasks, generally, a Cr light-shielding film is formed on a glass substrate, exposed and etched with a target pattern, thereby making it. [0003] In recent years, in order to form thinner and more accurate pattern line widths, in many cases, a Cr light-shielding film and a Cr oxide film or nitride film, that is, a semi-transparent film (phase shift film) are laminated. A pattern consisting of a portion that substantially shields light, a portion that transmits about half of light, and a portion that substantially transmits light is formed. [0004] In this method, a Cr light-shielding film is first formed on a glass substrate by sputtering, a resist is coated on it, and photosensitive is performed by laser irradiation...

Claims

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Application Information

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IPC IPC(8): G03F1/08G03F7/00G03F1/32G03F1/50G03F1/68G03F1/80
CPCG03F1/26G03F1/50G03F1/66H01L21/0274H01L21/0337H01L21/30604
Inventor 谷典明中村久三清田淳也铃木寿弘三村寿文
Owner ULVAC INC
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