Light emitting diode and manufacture method thereof
A technology of light-emitting diodes and confinement layers, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of high production cost and low yield, and achieve the effects of improving yield, simplifying production process, and shortening production time.
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Embodiment 1
[0018] Using the metal organic chemical vapor deposition method (hereinafter referred to as the MOCVD method), grow sequentially from bottom to top:
[0019] 1. Put the GaAs substrate into the reaction chamber, and grow the GaAs buffer layer with a thickness of 200nm at a crystal orientation (100) of 15°, a pressure of 80×155par, and 700°C;
[0020] 2. Grow a reflective layer with a thickness of 2.0μm at a pressure of 80×155par and 750°C;
[0021] 3. Grow an n-type confinement layer with a thickness of 1.0 μm at a pressure of 80×155 par and 740°C;
[0022] 4. Grow a luminescent layer with a thickness of 0.2μm at a pressure of 80×155par and 750°C;
[0023] 5. Grow a p-type confinement layer with a thickness of 0.7μm at a pressure of 80×155par and 750°C;
[0024] 6. Grow a window layer with a thickness of 3μm at a pressure of 80×155par and 700°C to obtain an epitaxial wafer;
[0025] 7. After cleaning with sulfuric acid, etch the area for growing the current blocking layer on...
Embodiment 2
[0031] Using the MOCVD growth method, grow sequentially from bottom to top:
[0032] 1. Put the GaAs substrate into the reaction chamber, and grow the GaAs buffer layer with a thickness of 200nm at (100) deviation 15°, pressure 80×155par, and 750°C;
[0033] 2. Grow a reflective layer with a thickness of 4.0μm at a pressure of 80×155par and 750°C;
[0034] 3. Grow an n-type confinement layer with a thickness of 1.0 μm at a pressure of 80×155 par and 740°C;
[0035] 4. Grow a luminescent layer with a thickness of 0.2μm at a pressure of 80×155par and 750°C;
[0036] 5. Grow a p-type confinement layer with a thickness of 0.7μm at a pressure of 80×155par and 750°C;
[0037] 6. Grow a window layer with a thickness of 12μm at a pressure of 80×155par and 730°C to obtain an epitaxial wafer;
[0038] 7. After cleaning with sulfuric acid, etch the area for growing the current blocking layer on the window layer. The etching method adopts ICP dry etching, and the etching depth is great...
Embodiment 3
[0044] Using the MOCVD growth method, grow sequentially from bottom to top:
[0045] 1. Put the GaAs substrate into the reaction chamber, and grow the GaAs buffer layer with a growth thickness of 200nm at a crystal orientation (100) of 15°, a pressure of 80×155par, and 700-750°C;
[0046] 2. Grow a reflective layer with a thickness of 3.0μm at a pressure of 80×155par and 750°C;
[0047]3. Grow an n-type confinement layer with a thickness of 1.0 μm at a pressure of 80×155 par and 740°C;
[0048] 4. Grow a luminescent layer with a thickness of 0.2μm at a pressure of 80×155par and 750°C;
[0049] 5. Grow a p-type confinement layer with a thickness of 0.7μm at a pressure of 80×155par and 750°C;
[0050] 6. Grow a window layer with a thickness of 5μm at a pressure of 80×155par and 735°C to obtain an epitaxial wafer;
[0051] 7. After cleaning with sulfuric acid, etch the area for growing the current blocking layer on the window layer. The etching method adopts ICP dry etching, a...
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