Method for preparing GaN-based light emitting diode (LED) semiconductor chip

Abstract

The invention discloses a method for preparing a GaN-based light emitting diode (LED) semiconductor chip. The GaN-based light emitting diode (LED) semiconductor chip is prepared by inserting a AlInN sacrifice layer into the conventional GaN-based LED structure on the basis of the wet-process etching property of a AlInN material to realize the settlement of sapphire and the separation of an epitaxial layer and transferring the epitaxial layer to a copper substrate with high electric conductivity and high heat conductivity through the combination of a chip bonding technique, plating and the like. The light output power, electric performance, light emitting performance and structural performance of the GaN-based LED semiconductor chip manufactured by the method disclosed by the invention areobviously improved, the manufacturing cost is low, the manufacturing is simple and easy, the adverse influences of a sapphire substrate element are eliminated radically, and the GaN-based LED semiconductor chip is suitable to be promoted and used in the field of LEDs or the preparation of semiconductor elements.

Description

technical field [0001] The invention relates to the field of semiconductor chips, in particular to a method for preparing a GaN-based LED semiconductor chip. Background technique [0002] GaN-based III-V compounds are important direct-bandgap wide-bandgap semiconductor materials, used in blue, green and ultraviolet light-emitting diodes (LED), short-wavelength laser diodes (LD), power electronic devices and ultraviolet detectors It has broad application prospects in optoelectronic devices (NAKAMURA S. J Cryst Growth, 1997, 170: 11-15.; MORKOC CH, STRITE S, GAO GB et al. J A P, 1994, 76: 1363-1398.). Due to the lack of GaN single crystal materials in nature, and the growth of bulk single crystal GaN is extremely difficult, the growth of GaN materials mainly adopts the method of heteroepitaxy, usually sapphire (Al 2 o 3 ) as a heteroepitaxy substrate, but there is a 16% lattice mismatch between sapphire and GaN, resulting in a high density of line defects in the epitaxial cr...

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Problems solved by technology

However, the disadvantage of this technology is that the cost is high and the process is more complicated.

[0004] Wet etching has the advantages of simple equipment, convenient operation, and less damage to materials. For most III-V compound semiconductor systems, high-selective lateral etching by etching off the sacrificial layer has been used to prepare complex three-dimensional microstructures, and This technology is widely used; however, due to the stability of group III-nitride-based materials, the transplantation of this technology has been limited, and relevant literature has been reported on the lateral etching of AlInN as a sacrificial layer (F.Rizzi,, K. Bejtka,, P.R. Edwards, R.W. Martin, I.M. Watsona, Journal of Crystal Growth 300 (2007) 254–258.; D. Simeonov, a E. Feltin,. Altoukhov, A. Castiglia, J.-F. Carlin, R.Butté, and N.Grandjean. APPLIED PHYSICS LETTERS 92,171102 (2008).), but there is no related report on the use of AlInN material wet etching to realize substrate transfer

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