Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for realizing self-cleaning by performing superhydrophobic modification treatment on surface of substrate

A superhydrophobic modification and self-cleaning technology, which is applied in the field of self-cleaning, can solve the problems of high cost, harsh experimental conditions, and practical application limitations, and achieve the effect of low raw material cost, self-cleaning and remarkable effect

Inactive Publication Date: 2011-06-08
GRADUATE SCHOOL OF THE CHINESE ACAD OF SCI GSCAS
View PDF1 Cites 17 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these methods not only require relatively harsh experimental conditions, but also have high costs, and are not conducive to large-scale industrial production, so their practical application is limited.
At the same time, these preparation methods have relatively high requirements on the substrate, such as requiring the substrate to withstand high temperature, conduct electricity, etc., which limit its wide application in actual production.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for realizing self-cleaning by performing superhydrophobic modification treatment on surface of substrate
  • Method for realizing self-cleaning by performing superhydrophobic modification treatment on surface of substrate
  • Method for realizing self-cleaning by performing superhydrophobic modification treatment on surface of substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Based on silicon wafer

[0020] Step 1: Cleaning: Sonicate the silicon wafer in water, ethanol, and acetone for 5 minutes in sequence, dry at 105°C for 5 minutes, take it out and put it at room temperature;

[0021] The second step: UV irradiation for 5 minutes;

[0022] The third step: prepare a superhydrophobic coating on the substrate: immerse the substrate treated in the second step above in 1% octadecyltrichlorosilane / toluene solution for 2 minutes, wash twice with toluene, heat at 105°C for 5 minutes, put to room temperature, a self-cleaning surface with superhydrophobic properties is obtained.

[0023] Adopt scanning electron microscope (JSM-7401F) to scan the surface topography of the superhydrophobic silicon wafer substrate that the present invention makes, as figure 1 As shown, the results show that there is a nanoscale rough structure on the superhydrophobic surface, which meets the roughness required for superhydrophobic performance.

[0024] The superhyd...

Embodiment 2

[0026] Based on polyethylene terephthalate (polyester) film

[0027] The self-assembly chemical reaction process of the polymer matrix of the present embodiment is:

[0028] (1) Silane buffer layer and UV light

[0029]

[0030] (2) Hydrophobic polymer surface preparation

[0031]

[0032] Concrete preparation steps are:

[0033] Step 1: Cleaning: Ultrasonic the polyester film in water, ethanol, and acetone for 5 minutes, then dry it at 105°C for 5 minutes, take it out and put it at room temperature;

[0034] The second step: prepare the silane buffer layer: immerse the substrate treated in the first step above in a 1% concentration of p-aminopropyltriethoxysilane / acetone solution for 5 minutes, take out the acetone and wash it once, heat at 105°C for 10 minutes, put to room temperature;

[0035] The third step: UV irradiation for 5 minutes;

[0036] Step 4: Prepare a superhydrophobic coating on the substrate: immerse the substrate treated in the third step above in...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for realizing self-cleaning by performing superhydrophobic modification treatment on the surface of a substrate, which comprises the following steps: 1) cleaning and drying an inorganic substrate, and placing the inorganic substrate at room temperature; 2) radiating the inorganic substrate treated by the step 1 with ultraviolet; and 3) preparing a superhydrophobic coating on the inorganic substrate to obtain a self-cleaning surface with superhydrophobic performance. When the substrate is a polymer substrate, a silane buffering layer is formed on the polymer substrate first before the step 2 and the step 3 are executed. The contact angle of water subjected to distillation for three times with the substrate surface prepared by the invention can reach 150 DEG, and the superhydrophobic coating can prevent pollution of impurities effectively and thus realize self-cleaning. The superhydrophobic coating has high stability.

Description

technical field [0001] The invention relates to a method for performing superhydrophobic modification treatment on the surfaces of metal oxides, polymers and metal substrates to realize self-cleaning. Background technique [0002] As an extreme case of wettability, superhydrophobic surfaces with a contact angle greater than 150° have attracted much attention for their potential advantages in self-cleaning materials, and have broad application prospects in national defense, industrial and agricultural production, and daily life. Based on the Wenzel and Cassie model, two conditions are required to obtain a superhydrophobic surface: low surface energy and high surface roughness. At home and abroad, a lot of research has been done on the preparation of superhydrophobic surfaces. The main methods are solidification of melt, etching, chemical vapor deposition, anodic oxidation and so on. However, these methods not only require relatively harsh experimental conditions, but also ha...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C09K3/18C08J7/06
Inventor 向军辉邢丽梁小红宋波陈世伟
Owner GRADUATE SCHOOL OF THE CHINESE ACAD OF SCI GSCAS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products