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Transparent glass ceramic material for ultraviolet excited white LED and preparation technique thereof

A technology of transparent glass and ultraviolet light, applied in the field of solid luminescent materials, can solve the problems of shortening the service life of white light LED devices, and achieve the effects of good thermal and chemical stability, low cost and simple preparation process

Inactive Publication Date: 2011-06-15
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Using this technology can basically avoid chromatic aberration, but because the epoxy resin will age under long-term exposure to ultraviolet light, the service life of white LED devices will be shortened

Method used

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  • Transparent glass ceramic material for ultraviolet excited white LED and preparation technique thereof
  • Transparent glass ceramic material for ultraviolet excited white LED and preparation technique thereof
  • Transparent glass ceramic material for ultraviolet excited white LED and preparation technique thereof

Examples

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Comparison scheme
Effect test

example 1

[0025] Example 1: Analytical pure SiO 2 、Al 2 o 3 , NaF and CeF 3 Powder, according to 50SiO 2 : 25Al 2 o 3 :15NaF:10CeF 3 (Molar ratio) is accurately weighed and placed in an agate mortar, ground for more than half an hour to make it evenly mixed, then placed in a platinum crucible, heated to 1400°C in a program-controlled high-temperature box-type resistance furnace, and then kept for 3 hours , and then, pour the molten glass into a copper mold quickly for forming; put the obtained precursor glass into a resistance furnace, anneal at 530°C for 2 hours and then cool with the furnace to eliminate internal stress. According to the results of differential thermal analysis, the annealed glass was kept at 650°C for 2 hours to obtain taupe transparent glass ceramics. X-ray diffraction results (such as figure 1 shown) shows that CeF with hexagonal structure is precipitated in the glass matrix 3 Crystalline phase; transmission electron microscope observation (such as figur...

example 2

[0027] Example 2: Analytical pure SiO 2 、Al 2 o 3 , LiF, CeF 3 and EuF with a purity of 99.99% 3 Powder, according to 0.1EuF 3 : 50SiO 2 : 25Al 2 o 3 :9.9LiF:15CeF 3 (Molar ratio) is accurately weighed and placed in an agate mortar, ground for more than half an hour to make it evenly mixed, then placed in a platinum crucible, heated to 1350°C in a program-controlled high-temperature box-type resistance furnace, and then kept for 6 hours , and then, quickly pour the glass melt into a copper mold for forming; put the obtained precursor glass into a resistance furnace, anneal at 500°C for 2 hours and then cool with the furnace to eliminate internal stress; according to the results of differential thermal analysis, the annealed The glass was kept at 600°C for 2 hours to obtain taupe transparent glass ceramics. X-ray diffraction results show that CeF with hexagonal structure is precipitated in the glass matrix 3 Crystalline phase; transmission electron microscopy observat...

example 3

[0029] Example 3: Analytical pure SiO 2 、Al 2 o 3 , NaF, CeF 3 and TbF with a purity of 99.99% 3 Powder, according to 0.5TbF 3 : 55SiO 2 : 25Al 2 o 3 : 12.5NaF : 7CeF 3 (Molar ratio) is accurately weighed and placed in an agate mortar, ground for more than half an hour to make it evenly mixed, then placed in a platinum crucible, heated to 1500°C in a program-controlled high-temperature box-type resistance furnace, and then kept for 6 hours , and then, quickly pour the glass melt into a copper mold to form it; put the obtained precursor glass into a resistance furnace, anneal at 550°C for 2 hours and then cool with the furnace to eliminate internal stress; according to the results of differential thermal analysis, the annealed The glass was kept at 670°C for 2 hours to obtain taupe transparent glass ceramics. X-ray diffraction results show that CeF with hexagonal structure is precipitated in the glass matrix 3 Crystalline phase; transmission electron microscopy observ...

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Abstract

The invention discloses a transparent glass ceramic material for an ultraviolet excited white light emitting diode (LED) and a preparation technique thereof. The glass ceramic comprises the following components: 40 to 60mol% of SiO2, 10 to 30mol% of Al2O3, 5 to 25mol% of CeF3, 0 to 15mol% of NaF, 0 to 15mol% of LiF, 0.01 to 5mol% of ReF3, less than 0.5% of MSO4 and less than 0.02% of Fe. Re represents rare-earth ions (such as Eu, Tb, Dy or the like); M represents Mg or Ca or Ba or Sr; and the content of the NaF and the content of the LiF are not 0 at the same time. The preparation technique for the glass ceramic comprises two steps of melt quenching preparation of precursor glass and subsequent crystallization treatment of the precursor glass. By changing rare-earth doping, the glass ceramic can generate intense multi-color (comprising white color) tunable light emission under the excitation of ultraviolet, and is expected to be developed and applied to a novel white LED device excited by an ultraviolet chip.

Description

technical field [0001] The invention relates to the field of solid luminescent materials, in particular to a rare earth-doped transparent glass ceramic capable of realizing multicolor (including white light) tunable luminescence under ultraviolet light excitation conditions and its preparation technology. technical background [0002] In recent years, white light-emitting diode (LED) lighting, which has unique advantages such as energy saving and durability, has attracted great attention from people. At present, it has gradually become a trend to replace traditional incandescent and fluorescent lamps with white LEDs. Currently common commercial white LEDs are made of blue GaN chips and Ce-doped 3+ It is made of yttrium aluminum garnet (YAG) phosphor powder packaged together, and the phosphor powder is mixed in epoxy resin and coated on the chip. Part of the blue light emitted by the GaN LED chip is absorbed by the phosphor, causing it to be excited to emit yellow light, an...

Claims

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Application Information

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IPC IPC(8): C03C10/16C03B32/02
Inventor 陈大钦王元生余运龙
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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