Preparation method of hydrophobic light trapping structure on silicon surface

A light-trapping structure and silicon surface technology, applied in the field of solar cells, can solve the problems of complex equipment and high operating costs, and achieve the effects of improving efficiency, simplifying the process, and high anti-reflection effect

Active Publication Date: 2011-06-22
NORTH CHINA ELECTRIC POWER UNIV (BAODING)
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  • Preparation method of hydrophobic light trapping structure on silicon surface
  • Preparation method of hydrophobic light trapping structure on silicon surface
  • Preparation method of hydrophobic light trapping structure on silicon surface

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[0018] 1. Use a (100) single chip with a resistivity of 7 to 13 Ω cm or a (111) single chip with a resistivity of 8 to 13 Ω cm, put it in a sodium hypochlorite solution with a mass fraction of 12%, and take a water bath at 80°C for 15 minutes; Rinse with deionized water for 1 min; then soak in hydrofluoric acid with a mass fraction of 5% at room temperature for 2 min; rinse with deionized water with a resistivity above 16Ω·cm for 2 min, and dry in vacuum;

[0019] 2. Corrode with 1% (wt) KOH and 8% (vol) isopropanol (hereinafter referred to as alkaline etchant) for 30 to 60 minutes (for example, 35 minutes) to etch the pyramid suede on the surface, and a large number of bubbles can be observed in the experiment The generation of , the silicon surface is no longer darkened by a bright mirror surface, and becomes rough; for (111) silicon wafers (such as figure 1 shown); without this step, go directly to the next step;

[0020] 3. The container to be used is first cleaned with h...

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Abstract

The invention discloses a preparation method of a hydrophobic light trapping structure on silicon surface, belonging to the technical field of the solar cell. The method adopts the silicon wafer (100) or (111) and comprises the following steps: using hot sodium hypochlorite solution and HF to clean and obtain a clean silicon surface; corroding single crystal silicon with alkaline corrosive agent to form the texture with pyramid-shaped surface, or performing catalytic etching with precious metal nanoparticles, namely plating silver on the surface of the silicon wafer through the silver mirror reaction and soaking the silicon wafer plated with silver in acidic corrosive agent; and obtaining the light trapping structure of the antireflection layer. By adopting the light trapping structure, the emissivity can be reduced to 5% in the visible wave band from 380nm to 780nm. By adopting the method of the invention, the technological process of the precious metal nanoparticle plating can be simplified, the characteristics of normal-temperature wet etching can be maintained and the silicon surface can have higher antireflection effect. In addition, the contact angle of the surface of the silicon wafer (100) is up to 110 degrees, the silicon wafer has super hydrophobicity and the new technical means is provided for increasing the efficiencies of the silicon and silicon film solar cells.

Description

technical field [0001] The invention belongs to the technical field of solar cells, in particular to a method for preparing a hydrophobic silicon surface light-trapping structure in the preparation of solar cells. It specifically relates to the noble metal nano-particle catalytic etching process technology for the preparation process of the silicon surface anti-reflection light trapping structure. Background technique [0002] Silicon solar cells occupy a dominant position in the solar cell market due to the wide source of raw materials and low cost. Reducing cost and improving conversion efficiency are the key directions of solar cell research. Reducing the reflection of incident sunlight on the light-receiving surface of the cell is one of the means to improve the photoelectric conversion efficiency of the solar cell. The commonly used anti-reflection measures mainly include etching silicon substrates by traditional methods, and preparing anti-reflection films such as Ti...

Claims

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Application Information

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IPC IPC(8): C30B33/10C23C18/44C23F1/24H01L31/18
CPCY02P70/50
Inventor 李美成任霄峰齐哲
Owner NORTH CHINA ELECTRIC POWER UNIV (BAODING)
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