Nanocrystalline silicon/crystalline silicon heterojunction photovoltaic cell

A photovoltaic cell and crystalline silicon technology, applied in the field of solar photovoltaic, can solve problems such as discontinuity of electric field, and achieve the effects of reducing interface recombination, good stability and low production cost

Inactive Publication Date: 2012-07-18
XI AN JIAOTONG UNIV
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  • Abstract
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  • Claims
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Problems solved by technology

[0008] The purpose of the present invention is to improve the deficiencies of the existing photovoltaic cell structure, overcome the problem of the discontinuous electric field at the interface of the HIT cell, and obtain a nano-silicon crystalline silicon heterogeneity with high photoelectric conversion efficiency and a concentration gradient junction formed on the crystalline silicon substrate of the cell Junction Photovoltaic Cell

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  • Nanocrystalline silicon/crystalline silicon heterojunction photovoltaic cell
  • Nanocrystalline silicon/crystalline silicon heterojunction photovoltaic cell

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Embodiment Construction

[0018] The stacking sequence of the present invention is as follows: front silver electrode, front TCO conductive film, p-type heavily doped nano-silicon layer, p-type lightly doped nano-silicon layer, p-type lightly diffused crystalline silicon layer, n-type crystalline silicon layer, this The structures of the nano-silicon layer, the n-type nano-silicon layer, the TCO conductive film on the back, and the silver electrode on the back are illustrated as examples. First, select n-type crystalline silicon wafers, perform the chemical cleaning process and texture in the production of conventional crystalline silicon cells, and then diffuse a low-concentration p-type layer on the n-type crystalline silicon wafers through the diffusion process, and then use RENA’s The wet etching process removes the back junction and edge pn junction, and then deposits a p-type lightly doped nano-silicon layer on the diffusion surface retained by the n-type crystalline silicon wafer using PECVD tech...

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Abstract

The invention discloses a nanocrystalline silicon / crystalline silicon heterojunction photovoltaic cell. The cell sequentially comprises a front side silver electrode, a front side TCO (transparent conductive oxide) conductive thin film, a p type heavily doped nanocrystalline silicon layer, a p type lightly doped nanocrystalline silicon layer, a p type lightly diffused crystalline silicon layer, an n type crystalline silicon layer, an intrinsic nanocrystalline silicon layer, an n type nanocrystalline silicon, a back side TCO conductive thin film and a back side silver electrode. The p type lightly doped nanocrystalline silicon layer and the p type lightly diffused crystalline silicon layer are prepared between the p type heavily doped nanocrystalline silicon layer and an n type crystallinesilicon substrate on the front side of the cell, and a thin buffer layer and a concentration gradient junction are formed between the p type heavily doped nanocrystalline silicon layer and the n typecrystalline silicon substrate. By utilizing the structure, the problem of lattice mismatch between the p type layer and an i type layer of the conventional heterojunction photovoltaic cell can be overcome, an interface electric field can be enhanced, the compounding of an interface can be reduced, the open-circuit voltage and a fill factor of the photovoltaic cell can be improved, and the photoelectric conversion efficiency can be improved.

Description

technical field [0001] The invention relates to a new structure of a photovoltaic cell, which belongs to the field of solar photovoltaic. Background technique [0002] As a photoelectric conversion device that directly utilizes solar energy, photovoltaic cells have been developing in two directions. One is to reduce the production cost of photovoltaic cells, and the other is to improve the photoelectric conversion efficiency of photovoltaic cells. At the same time, the stability of photovoltaic cells is also a concern. [0003] Crystalline silicon photovoltaic cells have the advantages of high photoelectric conversion efficiency and mature production technology, and have always accounted for more than 80% of the world's total output of photovoltaic cells. However, the production of traditional crystalline silicon photovoltaic cells needs to be carried out at high temperature for a long time. The high temperature process may cause more defects in the silicon material, which ...

Claims

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Application Information

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IPC IPC(8): H01L31/0747H01L31/0352H01L31/18H01L31/068
CPCY02E10/50H01L31/0747Y02E10/547
Inventor 杨宏帅争峰王鹤
Owner XI AN JIAOTONG UNIV
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