Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Micro piezoresistive device for measuring wall shear stress and manufacturing method thereof

A measuring device and shear stress technology, applied in the field of sensors, can solve problems such as difficult process manufacturing, flow field interference, and low sensitivity, and achieve the effects of simple process, reduced bending stiffness, and high sensitivity

Inactive Publication Date: 2011-07-13
NORTHWESTERN POLYTECHNICAL UNIV +1
View PDF6 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] In order to overcome the shortcomings of existing piezoresistive wall shear stress sensors based on MEMS technology, such as low sensitivity, difficult manufacturing process, and interference with the flow field, the present invention provides a miniature piezoresistive wall shear stress sensor with good comprehensive performance. Device and method of making the same

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Micro piezoresistive device for measuring wall shear stress and manufacturing method thereof
  • Micro piezoresistive device for measuring wall shear stress and manufacturing method thereof
  • Micro piezoresistive device for measuring wall shear stress and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] The measuring device in this embodiment is composed of a wall shear stress sensing part 1 , an elastic deformation part 2 , a piezoresistor 3 , wires 4 pads 5 , and a substrate 6 . A piezoresistor is made on the elastic deformation part 2, and is connected with an external measuring circuit through a wire 4 and a welding pad 5 to output an electric signal. The entire measuring device is pasted and fixed on a specific installation device through the base 6, and then the installation device is fixed at the position to be measured to realize measurement. After installation, the upper surface of the wall shear stress sensing part 1 is flush with the wall. The piezoresistor 3 is located at the bottom of the elastic deformation part. The material used in this device is silicon, which is processed by micro-processing technology. The main processing steps are as follows:

[0034] Step 1: Fabricate varistor 3 on the front side of the silicon wafer, see attached image 3 (a), ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a micro piezoresistive device capable of carrying out non-destructive measurement on wall shear stress of a flow field and a manufacturing method thereof, belonging to the technical field of sensors. The device comprises a sensing part 1, an elastic deformation part 2, a base 6, as well as a piezoresistor, a wire and a pad which are arranged on the elastic deformation part 2; wherein the device is arranged and fixed on a structure 7 to be measured by virtue of the base 6, and the upper surface of the sensing part 1 flushes with the surface to be measured of the structure 7 to be measured. The micro piezoresistive device for measuring wall shear stress provided by the invention can achieve better comprehensive performances: (1) high sensitivity is realized, and the bending stiffness of the elastic deformation part 2 can be greatly reduced so that the device achieves higher measuring sensitivity; (2) manufacturing steps and process are simple; only a conventional micro-processing process is required, the manufacturing cost is reduced, and the reliability and controllability of the process are improved; and (3) non-intrusive wall shear stress measurement can be carried out on the flow field.

Description

[0001] Field: [0002] The invention relates to a miniature piezoresistive wall shear stress measuring device and a manufacturing method thereof, in particular to a micro device capable of non-destructively measuring the wall shear stress in a flow field and a manufacturing method thereof, belonging to the technical field of sensors. Background technique: [0003] The flow parameters near the wall, especially the wall shear stress, are important basic parameters for studying and judging the shape of the flow field and the state of the boundary layer. The traditional devices used for wall shear stress measurement mainly include hot wire instrument, pitot tube, laser Doppler velocimeter (LDV) and so on. The measurement of wall shear stress requires not only a certain time resolution of the measuring device, but also a certain spatial resolution to facilitate distributed measurement. Due to the limitation of size, the traditional measurement devices are insufficient in terms of ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01L9/04B81B7/02B81C1/00
Inventor 姜澄宇马炳和孙海浪苑伟政
Owner NORTHWESTERN POLYTECHNICAL UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com