Preparation method of hydrogen and oxygen co-doped graphene

A co-doping, graphene technology, applied in chemical instruments and methods, single crystal growth, polycrystalline material growth, etc. Wide modulation range, easy-to-transfer effects

Active Publication Date: 2011-08-17
KUNMING INST OF PHYSICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] What the present invention is to solve is that the current graphene energy band is not easy to open, the electrical properties are not easy to modulate, the optical properties are not easy to change, it is difficult to achieve doping, and it is difficult to grow a large-area film with a controllable thickness. A preparation method for graphene is provided. The graphene prepared by this method can realize the co-doping of hydrogen and oxygen, which solves the difficulties in the application of graphene in the field of optoelectronics

Method used

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  • Preparation method of hydrogen and oxygen co-doped graphene
  • Preparation method of hydrogen and oxygen co-doped graphene

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Embodiment 1

[0029] Embodiment 1: A kind of preparation method of hydrogen-oxygen co-doped graphene, configure 0.5 mol / L glucose aqueous solution, take 40ml, add in the polytetrafluoroethylene liner of hydrothermal reaction kettle, put reaction kettle into already heated up Heat in an oven at 180°C for 2 hours. After the hydrothermal reactor is cooled to room temperature, the hydrogen-oxygen co-doped graphene intermediate is transferred to it with a quartz plate. After the intermediate film was dried, it was placed in a furnace at 1200°C, and heat-treated for 5 minutes in a nitrogen atmosphere to obtain hydrogen-oxygen co-doped graphene.

Embodiment 2

[0030] Embodiment 2: A kind of preparation method of hydrogen-oxygen co-doped graphene, configure 0.3mol / L glucose aqueous solution, get 40ml, add in the polytetrafluoroethylene liner of hydrothermal reactor, put reactor into already heated up Heat in an oven at 190°C for 3 hours. After the hydrothermal reactor is cooled to room temperature, the hydrogen-oxygen co-doped graphene intermediate is transferred to it with a quartz plate. After the intermediate film is dried, it is placed in a furnace at 1300° C., and heat-treated for 5 minutes under a nitrogen atmosphere to obtain hydrogen-oxygen co-doped graphene.

Embodiment 3

[0031] Embodiment 3: A kind of preparation method of hydrogen-oxygen co-doped graphene, configure 0.6 mol / L glucose aqueous solution, get 40ml, add in the polytetrafluoroethylene liner of hydrothermal reaction kettle, put reaction kettle into already heated up Heat in an oven at 170°C for 1.5 hours. After the hydrothermal reaction vessel is cooled to room temperature, the hydrogen-oxygen co-doped graphene intermediate is transferred to it with a glass sheet. After the intermediate film is dried, it is placed in a furnace at 450° C., and heat-treated for 30 minutes in a nitrogen atmosphere to obtain hydrogen-oxygen co-doped graphene.

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Abstract

The invention provides a preparation method of hydrogen and oxygen co-doped graphene, and relates to a preparation technique of a graphene film, in particular to a preparation technique of a hydrogen and oxygen co-doped graphene film. The preparation method comprises the steps of synthesizing an intermediate film by a hydrothermal process, transferring an intermediate and carrying out heat treatment technique on a substrate transferred with the intermediate. The preparation of the hydrogen and oxygen co-doped graphene film with adjustable thickness, controllable conductivity and semiconductorproperty can be realized by the technique.

Description

technical field [0001] The invention relates to a graphene film preparation process, in particular to a hydrogen-oxygen co-doped graphene film preparation process. Background technique [0002] Graphene is a single-layer carbon atomic surface material stripped from graphite materials. It is a two-dimensional structure of carbon, and the thickness of its crystal film is only 0.335 nanometers. The biggest feature of graphene is that its electrons move at a speed of more than 15,000 cm2 / V s, which is 1 / 300 of the speed of light. In addition, graphene has a low absorption rate for visible light, a thermal conductivity as high as 5300 W / m K, and a lower resistivity than copper and silver, about 10. -6 Ω cm, the quantum Hall effect can be observed at room temperature. In short, based on its chemical structure, graphene has many unique physical and chemical properties, such as high specific surface area, high electrical conductivity, high mechanical strength, easy modification an...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/02C30B7/10C01B31/02
Inventor 唐利斌刘树平姬荣斌庄继胜宋立媛陈雪梅马钰王忆锋
Owner KUNMING INST OF PHYSICS
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