Monocrystal silicon wafer flocking process liquid and preparation method thereof
A single crystal silicon wafer and process liquid technology, applied in chemical instruments and methods, crystal growth, post-processing details, etc., can solve problems affecting the appearance of cells and power generation efficiency, instability of suede process batches, etc., to achieve a solution The effect of improving the fragmentation rate, saving manpower, and improving quality stability
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Examples
specific Embodiment 1
[0021] A monocrystalline silicon chip flocking process liquid, comprising the following raw materials in proportion by weight: 62 parts of industrial pure water; 5 parts of electronic grade potassium hydroxide; 5 parts of butyric acid; 4 parts of electronic grade sodium silicate.
[0022] The preparation method is:
[0023] (1) Add 10 parts of industrial pure water and 5 parts of electronic grade potassium hydroxide into the reaction kettle, stir at 800-2500r / min to promote its dissolution, and keep the temperature of the solution at 50°C to 80°C by heating the spacer , the stirring time is controlled within 15 to 30 minutes;
[0024] (2) After the potassium hydroxide is completely dissolved, add butyric acid gradually in the proportion of 5 parts, stir at 800-3000r / min to promote its dissolution, and keep the temperature of the solution at 50°C to 80°C by heating the spacer, and stir The time is controlled within 30-60 minutes;
[0025] (3) Add electronic grade sodium silic...
specific Embodiment 2
[0028] A monocrystalline silicon chip flocking process liquid, comprising the following raw materials in proportion by weight: 86 parts of industrial pure water; 15 parts of electronic grade potassium hydroxide; 15 parts of acetic acid; 8 parts of electronic grade sodium silicate.
[0029] The preparation method is:
[0030] (1) Add 30 parts of industrial pure water and 15 parts of electronic grade potassium hydroxide into the reaction kettle, stir at 800-2500r / min to promote its dissolution, and keep the temperature of the solution at 50°C to 80°C by heating the spacer , the stirring time is controlled within 15 to 30 minutes;
[0031] (2) After the potassium hydroxide is completely dissolved, add acetic acid in a proportion of 15 parts, stir at 800-3000r / min to promote its dissolution, and keep the temperature of the solution at 50°C to 80°C by heating the spacer. Control in 30-60 minutes;
[0032] (3) Add electronic grade sodium silicate in the proportion of 8 parts, stir...
specific Embodiment 3
[0035] A monocrystalline silicon chip flocking process solution, comprising the following raw materials in proportion by weight: 74 parts of industrial pure water; 10 parts of electronic grade potassium hydroxide; 10 parts of valeric acid; 6 parts of electronic grade sodium silicate.
[0036] The preparation method is:
[0037] (1) Add 20 parts of industrial pure water and 10 parts of electronic grade potassium hydroxide into the reaction kettle, stir at 800-2500r / min to promote its dissolution, and keep the temperature of the solution at 50°C to 80°C by heating the spacer , the stirring time is controlled within 15 to 30 minutes;
[0038] (2) After the potassium hydroxide is completely dissolved, add valeric acid gradually in the proportion of 10 parts, stir at 800-3000r / min to promote its dissolution, and keep the temperature of the solution at 50°C to 80°C by heating the spacer, and stir The time is controlled within 30-60 minutes;
[0039] (3) Add electronic grade sodium...
PUM
Property | Measurement | Unit |
---|---|---|
reflectance | aaaaa | aaaaa |
reflectance | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com