All-solid-state repetitive-frequency nanosecond pulse source

A technique of repetition frequency and nanosecond pulse, which is applied in the direction of output power conversion device, DC power input conversion to DC power output, instruments, etc., can solve the problem that the repetition frequency is difficult to be super high, and achieves no technical threshold and is easy to purchase , easy-to-achieve effects

Inactive Publication Date: 2011-08-17
XI AN JIAOTONG UNIV
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Problems solved by technology

However, each scheme has its unavoidable defects: the repetition frequency of the Marx generator and the Blumlein transmission line is difficult to exceed 1kHz; and the steepening of the gas switch has gr

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  • All-solid-state repetitive-frequency nanosecond pulse source
  • All-solid-state repetitive-frequency nanosecond pulse source
  • All-solid-state repetitive-frequency nanosecond pulse source

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Embodiment Construction

[0021] The present invention relates to a repetition frequency nanosecond pulse source technology. The specific implementation of the present invention will be described below in conjunction with examples.

[0022] image 3 is the invention according to figure 1 The pulse source is developed in the topological structure, and the output high-voltage pulse waveform diagram. The peak value of the pulse is 42.4kV, the rising edge is 9ns, and the width at half maximum is 22ns.

[0023] Figure 4 It is the output high-voltage pulse waveform diagram under the same charging voltage condition and using diodes with different reverse recovery time parameters. in Figure 4 The diodes used in (a), (b), and (c) are named after models A, B, and C respectively, and the relevant parameters are shown in Table 1 below.

[0024] Table 1

[0025] model

reverse recovery time t rr

Voltage peak U p

Rising edge t r

A

50ns

29.6kV

9ns

B

80ns ...

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Abstract

The invention discloses an all-solid-state repetitive-frequency nanosecond pulse source, which comprises a primary energy storage capacitor C0, an insulated gate bipolar transistor (IGBT) semiconductor device, a saturable pulse transformer PT, a first secondary energy storage capacitor C1, a second secondary energy storage capacitor C2, a pre-magnetic switch MS1, a post-magnetic switch MS2, a post-energy storage capacitor C3, a fast recovery diode D-sos with a semiconductor open switch (SOS) effect, a resistive load Rx and a series inductor L. The magnetic switches are in fit with the fast recovery diode D-sos to produce high-voltage steep pulses. In the all-solid-state repetitive-frequency nanosecond pulse source, the common fast recovery diode is adopted instead of an SOS device with high cost, and has remarkable sharpening effects on the pulses; and a miniature pulsed power supply also has high performance, and can satisfy the needs of most of civilian industries and scientific researches.

Description

technical field [0001] The invention belongs to the technical field of pulse power sources, and in particular relates to a steep front repetition frequency nanosecond pulse power supply. Background technique [0002] Pulse power technology is produced by the needs of national defense technology, and has made great progress under its impetus. It is widely used in laser technology, plasma technology, electromagnetic guns and other research fields. In recent years, with the further development of pulse power technology, it has been widely used in industry, environmental protection, medicine and other fields. Specific applications include: extracorporeal shock wave lithotripsy, sewage treatment, food preservation, nanomaterial development, material surface treatment, etc. . [0003] The realization of all the above applications requires a key premise: a high-performance pulse power source. At present, major countries in the world have invested a lot of manpower and material re...

Claims

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Application Information

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IPC IPC(8): H02M3/315H02M3/07
Inventor 张乔根任保忠庞磊何堃刘轩东
Owner XI AN JIAOTONG UNIV
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