Method and device for manufacturing field-effect transistor

A field-effect transistor and manufacturing method technology, applied in transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve problems such as long time, decreased production efficiency, and loss of quality of active layer thin films.

Inactive Publication Date: 2011-08-24
ULVAC INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, there may be a problem that moisture or impurities in the atmosphere adhere to the surface of the active layer to impair the film quality of the active layer.
In addition, it takes a long time to form the protective layer, which is the main reason for the decrease in production efficiency.

Method used

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  • Method and device for manufacturing field-effect transistor
  • Method and device for manufacturing field-effect transistor
  • Method and device for manufacturing field-effect transistor

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no. 1 approach

[0061] Figure 1 to Figure 5 It is a sectional view showing main parts for explaining each process of the method of manufacturing the field effect transistor according to the first embodiment of the present invention. In this embodiment mode, a method of manufacturing a field effect transistor having a so-called bottom-gate transistor structure will be described.

[0062] Such as figure 1 As shown in (A), first, the gate electrode film 11F is formed on one surface of the substrate 10 .

[0063] A typical substrate 10 is a glass substrate. A typical gate electrode film 11F is composed of a metal single-layer film or a metal multi-layer film of molybdenum, chromium, aluminum, etc., and is formed by, for example, sputtering. The thickness of the gate electrode film 11F is not particularly limited, and it is, for example, 300 nm.

[0064] Next as figure 1 Medium (B)~ figure 1 As shown in (D), the gate electrode film 11F is processed into a resist mask 12 for patterning havin...

no. 2 approach

[0103] Figure 7 The second embodiment of the present invention is shown. In addition, in the drawings, parts corresponding to the above-mentioned first embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.

[0104] The transistor element 101 in this embodiment is produced through the same steps as those in the first embodiment. The difference between the illustrated transistor element 101 and the transistor element 100 in the first embodiment described above is that the barrier layer 16 has a multilayer structure composed of a first insulating film 16A and a second insulating film 16B.

[0105] The semiconductor layer containing zinc (Zn) has weak acid and alkali resistance, so it is easy to be etched. Therefore, a barrier layer 16 is formed in the trench region of the IGZO film 15F to prevent corrosion by an etchant when forming the active layer 15 . The barrier layer 16 functions as both an etching mask for the IGZO film...

no. 3 approach

[0116] Figure 9 The third embodiment of the present invention is shown. In addition, in the drawings, parts corresponding to the above-mentioned first and second embodiments are assigned the same reference numerals, and detailed description thereof will be omitted.

[0117] The transistor element 102 in this embodiment is produced through the same steps as those in the first embodiment. The difference between the illustrated transistor element 102 and the transistor element 101 in the above-described second embodiment is that the gate insulating film 14 has a multilayer structure composed of a first gate insulating film 14A and a second gate insulating film 14B.

[0118] The purpose of forming the gate insulating film is to ensure an electrically insulating state between the gate electrode and the active layer. However, since the gate insulating film made of a silicon oxide film has a low barrier to the diffusion of impurities from the substrate (substrate), when impurities...

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Abstract

Provided are a method for manufacturing a field-effect transistor by which an active layer can be protected from an etchant without being exposed to an air atmosphere, and a device for manufacturing same. A method for manufacturing a field-effect transistor comprises a step of forming an active layer (15) (IGZO film (15F)) of In-Ga-Zn-O based composition on a base material (10) by a sputtering method, a step of forming, on the active layer, a stopper layer (16) (stopper layer forming film (16F)) for protecting the active layer from an etchant for the active layer by the sputtering method, and a step of etching the active layer with the stopper layer as a mask. By depositing the stopper layer by the sputtering method, the stopper layer can be formed without exposing the active layer to the air after the active layer is deposited. Consequently, film quality degradation caused by the adhesion of water and impurities in the air to the surface of the active layer can be prevented.

Description

technical field [0001] The present invention relates to a manufacturing method and manufacturing device of a field effect transistor having an active layer formed of InGaZnO semiconductor oxide. Background technique [0002] In recent years, active matrix liquid crystal displays have been widely used. Each pixel of the active matrix liquid crystal display has a field effect thin film transistor (TFT) as a switching element. [0003] There are known types of thin film transistors, namely, a polysilicon thin film transistor whose active layer is made of polysilicon and an amorphous silicon thin film transistor whose active layer is made of amorphous silicon. [0004] Compared with polysilicon thin film transistors, amorphous silicon thin film transistors have the advantages that the active layer is easy to manufacture and can be uniformly formed on a larger substrate. [0005] Since the mobility of carriers (electrons and holes) in transparent amorphous oxide films is higher...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L21/203H01L29/786
CPCH01L21/02631H01L21/02554H01L21/02565H01L29/7869
Inventor 仓田敬臣清田淳也新井真赤松泰彦浅利伸桥本征典佐藤重光菊池正志
Owner ULVAC INC
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