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Composite transparent conductive film of cadmium telluride (CdTe) solar battery and preparation method of composite transparent conductive film

A technology for transparent conductive films and solar cells, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems that the film layer is not easy to form a continuous film, destroy the pn junction characteristics of the battery, and the film quality is not easy to control, etc., to solve the problem of thickness control. , the effect of improving quantum efficiency and increasing short-circuit current density

Inactive Publication Date: 2011-08-31
上海太阳能电池研究与发展中心
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There is a problem in the preparation process of CdTe cells: the main absorption layer of sunlight is in the CdTe layer, while the band gap of the CdS film as an n-type layer is only 2.4eV, and most of the short-wavelength sunlight will be absorbed when passing through the CdS film. Energy, in order to avoid energy loss and allow sunlight to enter the CdTe layer as much as possible, it is necessary to thin the CdS layer, but if the CdS layer is too thin, the film layer will be distributed in an island shape and it is difficult to form a continuous film, resulting in micropores in the film , so that the p-type CdTe and TCO layer are directly connected, forming a pinhole effect, destroying the pn junction characteristics of the battery, and reducing the efficiency of the battery, so the control of the thickness of the CdS film layer has become a difficult problem to grasp
Cd 2 SnO 4 As a high conductivity and high transmittance film layer, although with Zn 2 SnO 4 Has the same crystal structure, but Cd is poisonous, and the quality of the prepared film is not easy to control, so there are few studies at present
In addition, Cd 2 SnO 4 The preparation cost of the target is high, and in terms of industrial production, the cost factor is a factor that needs to be considered. Therefore, Cd 2 SnO 4 The high-cost preparation of the thin film limits its application in the industrial production of CdTe batteries

Method used

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  • Composite transparent conductive film of cadmium telluride (CdTe) solar battery and preparation method of composite transparent conductive film
  • Composite transparent conductive film of cadmium telluride (CdTe) solar battery and preparation method of composite transparent conductive film
  • Composite transparent conductive film of cadmium telluride (CdTe) solar battery and preparation method of composite transparent conductive film

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Embodiment 1

[0024] The glass substrate was cleaned and dried with nitrogen, and placed on the substrate stage of the magnetron sputtering chamber. The ZnO:Al target (Al 2 o 3 Doping dose ratio is 2wt%) and Zn 2 SnO 4 The targets are installed on the respective target guns, and the sputtering chamber is vacuumed to 2×10 -4 Pa, and then use radio frequency magnetron sputtering technology to grow ZnO:Al film on the glass substrate first, and then grow Zn 2 SnO 4 film.

[0025] Magnetron sputtering parameter range setting of ZnO:Al film layer: sputtering power is 200W, sputtering gas is high-purity Ar, sputtering gas pressure is 0.15Pa, substrate temperature is room temperature, deposition time is 1.5 hours, and the film thickness obtained is 683nm.

[0026] Zn 2 SnO 4 Magnetron sputtering parameter range setting of the film layer: the sputtering power is 100W, and the sputtering gas is high-purity O 2, the sputtering pressure is 0.33Pa, the substrate temperature is room temperature...

Embodiment 2

[0029] The glass substrate was cleaned and dried with nitrogen, and placed on the substrate stage of the magnetron sputtering chamber. The ZnO:Al target (Al 2 o 3 Doping dose ratio is 2wt%) and Zn 2 SnO 4 The targets are installed on the respective target guns, and the sputtering chamber is vacuumed to 2×10 -4 Pa, and then use radio frequency magnetron sputtering technology to grow ZnO:Al film on the glass substrate first, and then grow Zn 2 SnO 4 film.

[0030] Magnetron sputtering parameter range setting of ZnO:Al film layer: sputtering power is 250W, sputtering gas is high-purity Ar, sputtering pressure is 0.15Pa, substrate temperature is room temperature, deposition time is 2 hours, and the film thickness obtained is 1006nm.

[0031] Zn 2 SnO 4 Magnetron sputtering parameter range setting of the film layer: the sputtering power is 100W, and the sputtering gas is high-purity O 2 , the sputtering pressure is 0.33Pa, the substrate temperature is room temperature, an...

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Abstract

The invention discloses a composite transparent conductive film of a cadmium telluride (CdTe) solar battery and a preparation method of the composite transparent conductive film. The composite transparent conductive film consists of zinc oxide: aluminium (ZnO:Al) and zinc 2 stannic oxide 4 (Zn2SnO4) which are environment-friendly. The method comprises a step of forming the composite transparent conductive film by magnetron sputtering growth and high-temperature quick annealing treatment. The invention has the advantages that: a film material is non-toxic, rich in resources and low in cost; a Zn2SnO4 film can solve the problem of poor adhesion between an active layer and a transparent conductive film layer of the battery, can solve the problem of a too-narrow band gap of cadmium sulphide (CdS), can reduce influence of the thickness of the CdS on the performance of the battery, and can improve the quantum efficiency of the CdTe battery in a whole effective wave band; and the composite film with ZnO:Al and Zn2SnO4 structures has low resistivity and high transmissivity, and is a novel transparent conductive film applied to the CdTe solar battery.

Description

technical field [0001] The invention relates to the technical field of transparent conductive oxide thin films, in particular to a composite transparent conductive thin film used for CdTe thin film solar cells and a preparation method thereof. Background technique [0002] CdTe solar cells are considered to be a very promising thin film solar cell. CdTe has an optical bandgap of 1.45eV, which is very close to the optimal energy gap needed for solar cells; the absorption coefficient is about 10 5 cm -1 , ideally, a CdTe film with a thickness of 1 μm can absorb 99% of solar radiation energy and be used as a solar cell material, which can reduce material consumption and production costs. In addition, it can be produced using a variety of rapid film-forming technologies, and its commercial performance has been relatively good in recent years. Many researchers are optimistic about its market prospects and believe that it may exceed the share of amorphous silicon solar cells in ...

Claims

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Application Information

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IPC IPC(8): H01L31/0224H01L31/0216H01L31/18C23C14/08C23C14/35
CPCY02P70/50
Inventor 褚君浩梁艳马建华朱晓晶王善力江锦春姚娘娟
Owner 上海太阳能电池研究与发展中心
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