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Manufacturing method of porous anodised aluminum oxide biochip

A porous anode and biochip technology, applied in the field of biochip research, can solve problems such as complex manufacturing process

Inactive Publication Date: 2011-09-14
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Biochips involve the integration of various related technologies, and the manufacturing process is complicated. At the same time, they are restricted by international patents and intellectual property rights.

Method used

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  • Manufacturing method of porous anodised aluminum oxide biochip
  • Manufacturing method of porous anodised aluminum oxide biochip
  • Manufacturing method of porous anodised aluminum oxide biochip

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Experimental program
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Embodiment Construction

[0030] see figure 1 combined reference figure 2 As shown, the present invention is a method for making an anodized aluminum sequencing chip, comprising the following steps:

[0031] Step 1: Take a substrate 10, clean it, and remove organic and inorganic impurities. The material of the substrate 10 is glass, pottery, organic thin film material or silicon-based semiconductor material substrate. Cleaning is to use ultrasonic waves in order to analyze pure acetone, Cleaning with absolute ethanol and deionized water to remove organic impurities on the surface of the substrate 10, then heating and boiling the substrate 10 with a mixture of sulfuric acid and hydrogen peroxide, and rinsing with deionized water to remove inorganic impurities on the surface of the substrate 10. The method can remove organic attachments and inorganic particles on the surface of the substrate 10, and improve the film-forming quality of the aluminum film 11;

[0032] Step 2: pre-baking, vacuum-drying th...

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Abstract

The invention discloses a manufacturing method of a porous anodised aluminum oxide biochip. The manufacturing method comprises the following steps of: 1, cleaning a substrate to remove organic and inorganic impurities; 2, pre-baking and drying the substrate in vacuum; 3, carrying out vapor deposition on an aluminum film on the surface of the substrate subjected to vacuum drying; 4, placing the substrate with the surface plated with the aluminum film into electrolyte to carry out primary anodic oxidation; 5, immersing the substrate subjected to the primary anodic oxidation by using a mixed solution of phosphoric acid and chromic acid to remove an aluminum oxide film generated during the primary anodic oxidation and form active spots on the surface of the aluminum film; 6, carrying out secondary anodic oxidation and reaming treatment on the aluminum film to form perforated holes on the active spots on the surface of the aluminum film so as to obtain a porous anodised aluminum oxide array chip; 7, processing the surface of the chip by using plasmas; and 8, bonding dual-functional-group molecules on the surface of the chip in a covalent way to complete the manufacturing of the porous anodised aluminum oxide biochip.

Description

technical field [0001] The invention relates to the field of biochip research, in particular to a porous anodized aluminum biochip and a manufacturing method thereof. Background technique [0002] The concept of biochip was put forward in the early 1980s, which generally refers to all microprocessors prepared by biotechnology or applied to biotechnology. Biochips realize accurate, fast, cheap, and large-information detection of compounds, cells, proteins, DNA, and other biological components, and provide a carrier platform for high-throughput biological detection. Biochip involves the integration of various related technologies, the production process is complex, and at the same time, it is restricted by international patents and intellectual property rights. Contents of the invention [0003] The purpose of the present invention is to provide a porous anodized aluminum biochip and its manufacturing method, which has the characteristics of simple operation, high reliabili...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N33/48C25D11/12C23C14/14
Inventor 韩伟静俞育德李运涛任鲁风周晓光于军孙英男
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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