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Preparation method of crystalline silicon solar cell

A technology of solar cells and crystalline silicon, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of waste of special gas flow, low output, and inability to adjust belt speed, etc., to increase output, improve production efficiency, and save costs Effect

Active Publication Date: 2011-11-16
BAODING GUANGWEI GREEN ENERGY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

And the belt speed cannot be adjusted, the output is low, and the special gas flow is wasted

Method used

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  • Preparation method of crystalline silicon solar cell
  • Preparation method of crystalline silicon solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0012] Example 1, making a red solar cell. It includes the following steps:

[0013] (1) Texture and diffuse the raw silicon wafers; control the texturing depth at 0.2-1.0 μm, and control the diffusion as a shallow junction to be less than 0.1-0.2 μm;

[0014] (2), use PECVD equipment to coat silicon nitride antireflection film; adjust flow meter 1 and flow meter 3 respectively, control the ammonia gas entering U-shaped groove 1, U-shaped groove 2, U-shaped groove 3 and U-shaped groove 4 The flow rate of NH3 and silane SIH4 makes the flow ratio of ammonia NH3 and silane SIH4 be 6:5; adjust flowmeter 2 and flowmeter 4 respectively, control to enter U-shaped groove 5, U-shaped groove 6, U-shaped groove 7 and U-shaped groove The flow rate of ammonia NH3 and silane SIH4 in the type groove 8 makes the flow ratio of ammonia NH3 and silane SIH4 be 3: 1, 7: 2 and 4: 1, preferably 7: 2; Regulate flow meter 5, control The flow rate of the hydrogen H entering the U-shaped groove 5 is 2...

Embodiment 2

[0017] Embodiment 2, making a yellow solar battery sheet. It includes the following steps:

[0018] (1) Texture and diffuse the raw silicon wafers; control the texturing depth at 0.2-1.0 μm, and control the diffusion as a shallow junction to be less than 0.1-0.2 μm;

[0019] (2), use PECVD equipment to coat silicon nitride antireflection film; adjust flow meter 1 and flow meter 3 respectively, and control the ammonia gas entering U-shaped groove 1, U-shaped groove 2, U-shaped groove 3 and U-shaped groove 4 The flow rate of NH3 and silane SIH4 makes the flow ratio of ammonia NH3 and silane SIH4 be 6: 5; adjust flow meter 2 and flow meter 4 respectively, control to enter U-shaped groove 5, U-shaped groove 6, U-shaped groove 7 and U-shaped groove Ammonia NH3 and silane SIH4 flow in the type groove 8, make the flow ratio of ammonia NH3 and silane SIH4 be 3: 1, 7: 2 and 4: 1, preferably 4: 1; Regulate flow meter 5, control The flow rate of the hydrogen H entering the U-shaped gro...

Embodiment 3

[0022] Embodiment 3, making green solar cells. It includes the following steps:

[0023] (1) Texture and diffuse the raw silicon wafers; control the texturing depth at 0.2-1.0 μm, and control the diffusion as a shallow junction to be less than 0.1-0.2 μm;

[0024] (2), use PECVD equipment to coat silicon nitride antireflection film; adjust flow meter 1 and flow meter 3 respectively, and control the ammonia gas entering U-shaped groove 1, U-shaped groove 2, U-shaped groove 3 and U-shaped groove 4 The flow rate of NH3 and silane SIH4 makes the flow ratio of ammonia NH3 and silane SIH4 be 6: 5; adjust flow meter 2 and flow meter 4 respectively, control to enter U-shaped groove 5, U-shaped groove 6, U-shaped groove 7 and U-shaped groove Ammonia NH3 and silane SIH4 flow in the type groove 8, make the flow ratio of ammonia NH3 and silane SIH4 be 3: 1, 7: 2 and 4: 1, preferably 3: 1; Regulate flow meter 5, control The flow rate of the hydrogen H entering the U-shaped groove 5 is 20...

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Abstract

The invention discloses a preparation method of a crystalline silicon solar cell. The method comprises the following steps: 1, carrying out texture etching and diffusion on a raw material silicon wafer, wherein the depth of texture etching is controlled to be 0.2-1.0 mu m, the diffusion is controlled to be 0.1-0.2 mu m; 2, coating a silicon nitride antireflection film by using PECVD (plasma enhanced chemical vapor deposition) equipment, wherein the flow ratio of ammonia gas NH3 and silane SIH4 entering into the first four U-shaped grooves of the PECVD equipment is 6:5; the flow ratio of ammonia gas NH3 and silane SIH4 entering into the last four U-shaped grooves of the PECVD equipment is 3:1-4:1; hydrogen H2 with gas flow of 200-300Sccm is charged in the five U-shaped groove in all the U-shaped grooves; the color of the film of which the thickness is controlled to be 20-40nm is yellow, the color of the film of which the thickness is controlled to be 40-60nm is red, and the color of the film of which the thickness is controlled to be 100-120nm is green. According to the invention, through changing the total amount of the gas entering all the U-shaped grooves of the PECVD equipment,the thickness of the antireflection film can be controlled, and then the cell can show red, green and yellow, so that the demand for the integration of photovoltaic products and buildings can be satisfied. The invention has the advantages of increasing output, reducing the flows of ammonia gas NH3, silane SIH4 and hydrogen H2, improving production efficiency and lowering the cost.

Description

technical field [0001] The invention belongs to the technical field of solar cell production, in particular to a method for preparing a crystalline silicon solar cell. Background technique [0002] At present, the anti-reflection film of solar cells is mainly produced by plasma-enhanced chemical vapor deposition (PECVD). Whether the anti-reflection film is one layer or two layers, the surface color of the battery sheet is always blue-black. After the battery component is packaged, the color of the battery component is single. And the belt speed cannot be adjusted, the output is low, and the special gas flow is wasted. With the continuous progress of the photovoltaic industry, the market has put forward higher requirements for photovoltaic products, not only to ensure the continuous improvement of efficiency, but also to put forward more stringent requirements for the appearance of the cells. At present, a large number of photovoltaic power stations are under construction, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0216C23C16/52
CPCY02P70/50
Inventor 何四红
Owner BAODING GUANGWEI GREEN ENERGY TECH CO LTD
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