N-type doped zns quasi-one-dimensional nanostructure film photoconductive ultraviolet detector and preparation method

An ultraviolet detector and nanostructure technology, applied in nanotechnology, nanotechnology, semiconductor devices, etc., can solve the problems of low response speed, small responsivity, and difficult application of UV detectors, and improve the responsivity and sensitivity of ultraviolet light. High and low cost effect

Inactive Publication Date: 2011-12-14
HEFEI UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

There are not many studies on UV detection of ZnS quasi-one-dimensional nanomaterials. Among the related reports that have been retrieved, Fang et al. studied the intrinsic ZnS nanobelt photoconductive UV detector [X.S.Fang, Y.S.Bando, M.Y.Liao, U.K.Gautam, C.Y. Zhi, B.Dierre, B.D.Liu, T.Y

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  • N-type doped zns quasi-one-dimensional nanostructure film photoconductive ultraviolet detector and preparation method
  • N-type doped zns quasi-one-dimensional nanostructure film photoconductive ultraviolet detector and preparation method
  • N-type doped zns quasi-one-dimensional nanostructure film photoconductive ultraviolet detector and preparation method

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Embodiment 1

[0029] The preparation method and steps of Cl-doped ZnS nanowire film photoconductive ultraviolet detector are as follows:

[0030] 1. After ultrasonically cleaning the silicon wafer with a thickness of 300nm silicon oxide on the surface, use alcohol as the dispersion liquid, and synthesize the doping concentration by chemical vapor phase method to 2.6×10 16 cm -3 The Cl-doped ZnS nanowires were added into the dispersion liquid, and the nanowires were evenly suspended in the dispersion liquid by ultrasonic vibration.

[0031] 2. Spin-coat the dispersion containing ZnS nanobelts on a clean silicon wafer with silicon oxide, and form a ZnS nanobelt film through volatilization.

[0032] 3. Spin-coat photoresist on the silicon wafer coated with the ZnS nanowire film, and photo-etch the interdigital electrode 2 pattern, the distance between adjacent interdigital electrodes is 5 μm, and the width is 10 μm.

[0033] 4. Prepare a layer of AZO electrode with a thickness of 50 nm on th...

Embodiment 2

[0037] The preparation method and steps of Ga-doped ZnS nanobelt film photoconductive ultraviolet detector are as follows:

[0038] 1. After the quartz glass is ultrasonically cleaned, acetone is used as the dispersion liquid, and the doping concentration of the chemical vapor phase synthesis is 1.5×10 17 cm -3 The Ga-doped ZnS nanobelts are added into the dispersion liquid, and the nanobelts are evenly suspended in the dispersion liquid by ultrasonic vibration.

[0039] 2. Spin-coat the dispersion containing ZnS nanobelts on the quartz glass, and form a ZnS nanobelt film through volatilization;

[0040] 3. Spin-coat photoresist on the quartz glass coated with ZnS nanobelt film, and photo-etch the pattern of interdigitated electrodes. The distance between adjacent electrodes of the interdigitated electrodes is 10 μm, and the width is 100 μm;

[0041] 4. Prepare a layer of ITO electrode on the photolithographic electrode by pulse laser deposition method, with a thickness of 2...

Embodiment 3

[0044] The preparation method and steps of Al-doped ZnS nanowire film photoconductive ultraviolet detector are as follows:

[0045] 1. After ultrasonically cleaning the silicon wafer coated with silicon nitride with a thickness of 50nm on the surface, use alcohol as the dispersion liquid, and the doping concentration of the chemical vapor phase synthesis is 3.8×10 17 cm -3The Al-doped ZnS nanowires are added to the dispersion liquid, and the nanowires are evenly suspended in the dispersion liquid by ultrasonic vibration;

[0046] 2. Spin-coat the dispersion containing ZnS nanowires on a clean silicon wafer coated with silicon nitride, and form a ZnS nanowire film through volatilization;

[0047] 3. Spin-coat photoresist on the silicon wafer coated with ZnS nanowire film, and photo-etch the pattern of interdigitated electrodes. The distance between adjacent electrodes of the interdigitated electrodes is 50 μm, and the width is 50 μm;

[0048] 4. Prepare a layer of AZO electro...

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Abstract

The invention discloses an n-type doped ZnS quasi-one-dimensional nanostructure photoconductive ultraviolet detector and a preparation method. It is formed by stacking thin film and insulating substrate. The ultraviolet detector of the present invention uses the n-type doped ZnS quasi-one-dimensional nanostructure film as the ultraviolet sensitive layer, so that it is only sensitive to light with a wavelength of less than 335nm, and uses transparent interdigitated electrodes and nanostructure films to enhance the light-receiving area and improve the ultraviolet light. Responsivity, while using ZnS as photosensitive material, environmentally friendly and reliable. The invention has the advantages of simple structure, high sensitivity, low cost and easy realization.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to an n-type doped ZnS quasi-one-dimensional nanostructure photoconductive ultraviolet detector and a preparation method. Background technique [0002] Ultraviolet detectors are widely used in astronomy, combustion engineering, water purification, flame detection, biological effects, sky communication and environmental pollution detection, etc. Zinc sulfide ZnS is one of the most important II-VI group direct bandgap semiconductors, with a forbidden band width of 3.7eV. It has piezoelectricity, infrared transparency and good luminescence properties. It has been widely studied as a material. It has a wide range of applications in many fields such as ultraviolet detectors, solar cells, infrared windows, lasers and catalysis. Since the ZnS band gap is in the ultraviolet range, it is one of the ideal materials for making ultraviolet detection devices. Compared...

Claims

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Application Information

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IPC IPC(8): H01L31/09H01L31/0296H01L31/0224H01L31/18B82Y30/00
CPCY02P70/50
Inventor 于永强揭建胜蒋阳朱志峰江鹏
Owner HEFEI UNIV OF TECH
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