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Organic thin film transistor and its preparation method

A technology of organic thin film and transistor, applied in the field of organic thin film transistor and its preparation, to achieve the effect of improving performance and reducing contact resistance

Inactive Publication Date: 2011-12-14
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The object of the present invention is to provide an organic thin film transistor and its preparation method to reduce the contact resistance, improve the performance of the organic thin film transistor, thereby overcome the ohmic gap formed between the organic active layer and the source / drain electrode in the existing organic thin film transistor The problem with contact resistance

Method used

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  • Organic thin film transistor and its preparation method
  • Organic thin film transistor and its preparation method
  • Organic thin film transistor and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] (1) Select a heavily doped silicon wafer with a 300nm thick oxide layer as the substrate, (heavily doped silicon and the oxide layer are used as the gate and insulating layer respectively) with acetone, ethanol, and deionized water for 20 minutes, drying in an oven;

[0039] (2) Weigh 0.006g of P3HT, add 2ml of chlorobenzene, stir for 20 minutes to make it all dissolve, and make 3mg / ml of P3HT solution as P3HT ink;

[0040] (3) Set computer control program and graphic files;

[0041] (4) Using aerosol printing equipment, set the printing parameters (surrounding airflow: 50ccm; mist delivery airflow: 20ccm; ultrasonic power: 50w; printing speed: 1mm / sec), and make the P3HT ink form a micron through the ultrasonic wave of water Even smaller aerosols are brought to the spray head by inert gas, and sprayed evenly on the surface of the substrate with a needle with a diameter of 150 μm. Uniform P3HT film, then put it in an oven at 120°C for 1 hour of vacuuming;

[0042] (5...

Embodiment 2

[0048] (1) Select a heavily doped silicon wafer with a 300nm-thick oxide layer as the substrate (heavily doped silicon and the oxide layer are used as the gate and insulating layer respectively), and use acetone, ethanol, and deionized water to ultrasonicate for 20 minutes. , dried in an oven;

[0049] (2) Weigh 0.006g of P3HT, add 2ml of chlorobenzene, stir for 20 minutes to dissolve it completely, and make a 3mg / ml P3HT solution;

[0050] (3) The substrate is placed on the sample stage of the spin coater, the rotating speed of the spin coater is set to 3000rpm, the P3HT solution is dripped on the substrate, and the entire substrate is covered, the spin coater is turned on, and the equipment stops after 30 seconds. Form a uniform P3HT active layer film with a thickness of 100nm-1μm on the substrate, and then put it into an oven at 120°C to vacuumize for 1h;

[0051] (5) Weigh 0.006g P3HT and 0.01g NOPF 6Dissolve it in 2ml of chlorobenzene, stir for 20 minutes to dissolve it...

Embodiment 3

[0056] (1) Select a heavily doped silicon wafer as the substrate (at the same time as the gate), use acetone, ethanol, and deionized water to ultrasonically for 20 minutes, and dry in an oven;

[0057] (2) Weigh 0.01g of PMMA, add 2ml of anisole, stir for 20 minutes to dissolve it completely, and make a 5mg / ml PMMA solution.

[0058] (3) The substrate is placed on the sample stage of the spin coater, the rotating speed of the spin coater is set to be 2500rpm, the PMMA solution is dripped on the substrate, and the whole substrate is covered, the spin coater is turned on, and the equipment stops after 25 seconds. Form a uniform PMMA insulating layer film with a thickness of 100nm-1μm on the substrate, and then put it in an oven at 60°C to vacuumize for 1h;

[0059] (4) Weigh 0.006g of P3HT, add 2ml of chlorobenzene, stir for 20 minutes to make it all dissolve, and make a 3mg / ml P3HT solution;

[0060] (3) the substrate that is spin-coated with the PMMA film layer is placed on t...

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Abstract

The invention discloses an organic thin film transistor and a preparation method thereof. The transistor includes a substrate, source and drain electrodes, a gate electrode, an insulating layer and an active layer, the active layer includes a thin film layer made of organic semiconductor material, and the source and drain electrodes are made of dopant and the organic semiconductor material The mixture forms a thin film layer. The method is as follows: after depositing an organic semiconductor film on a substrate with a solution of an organic semiconductor material, and then annealing to obtain an active layer; An electrode material layer is deposited on the active layer, and then annealed to form source and drain electrodes with a set morphology. The invention can effectively reduce the contact resistance between the source and drain electrodes and the active layer in the organic thin film transistor, and further improve the performance of the organic thin film transistor.

Description

technical field [0001] The invention particularly relates to an organic thin film transistor and its preparation process. Background technique [0002] Organic thin film transistor (Organic Thin Film Transistor, OTFT) has many advantages such as wide material sources, compatibility with flexible substrates, multiple film-forming technologies, light weight, low-temperature manufacturing, and low manufacturing cost, and can be widely used in all-organic active matrices Display, memory components, smart cards, electronic tags, and large-area sensor arrays. It can be predicted that OTFT will greatly change the single current situation in the field of electronic information composed of field-effect transistors in many aspects, so it has attracted more and more attention from people. [0003] However, with the deepening of OTFT research, it is found that there are still many shortcomings and problems in this technology. Studies have shown that the ohmic contact resistance formed...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/10H01L51/40
Inventor 潘革波杨丽媛
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI