A kind of preparation method of aluminum nitride film

Abstract

The invention relates to a method for preparing an aluminum nitride film by using atomic layer deposition equipment. The preparation method includes the following steps: placing the silicon substrate in the reaction chamber of the atomic layer deposition equipment; introducing an aluminum-containing substance into the reaction chamber of the atomic layer deposition equipment, and the carbon-containing substance chemically reacts with the surface of the silicon substrate, so that The aluminum atoms in the aluminum-containing substance are adsorbed on the surface of the silicon substrate; the nitrogen-containing substance is introduced into the reaction chamber of the atomic layer deposition equipment, and the nitrogen-containing substance has a halogenation reaction with the surface of the silicon substrate, and the nitrogen-nitrogen atoms in the nitrogen-containing substance and The aluminum atoms on the surface of the silicon substrate form aluminum-nitrogen bonds, and after the reaction is complete, an aluminum nitride film structure is formed on the surface of the silicon substrate. The invention uses ALD equipment and common precursors to prepare aluminum nitride films at normal temperature and low pressure, and can effectively reduce energy consumption, improve the uniformity of aluminum nitride films and reduce the roughness of films, and in the production process It can also effectively reduce the adverse effects of Al hydrolysis.

Description

technical field [0001] The invention relates to the technical field of aluminum nitride thin film preparation, in particular to a method for preparing aluminum nitride thin film by atomic layer deposition equipment. Background technique [0002] Aluminum nitride (AlN) is a compound semiconductor material with a wide energy gap and a direct band gap structure with excellent performance. It has the characteristics of high breakdown electric field, high thermal conductivity, high electrical conductivity and high stability. High-quality aluminum nitride also has extremely high sound propagation velocity, small sound wave loss and large piezoelectric coupling constant, as well as a thermal expansion coefficient that matches Si, good electrical insulation and non-toxic properties. At present, it is widely used in the fields of microelectronics and optics, and has broad application prospects in the field of surface acoustic device (SAW) manufacturing. [0003] SAW devices have t...

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Problems solved by technology

At present, the methods of preparing aluminum nitride thin films are still limited to traditional CVD, sputtering, molecular beam epitaxy, etc., and the uniformity and roughness of the prepared thin films still need to be improved.

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