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CNT (carbon nano tube) field emission array with current limiting transistors and preparation thereof

A carbon nanotube and field emission technology, which is applied in the manufacture of discharge tubes/lamps, parts of discharge tubes/lamps, cold cathodes, etc., can solve the problems of small total emission current, serious emission stability and uniformity, Emission performance cannot meet the requirements of the device, etc., to achieve the effect of high emission stability and high emission current density

Inactive Publication Date: 2012-01-04
上海康众光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the research on carbon nanotube arrays has not been widely used in practice so far, and there are still many deficiencies that need to be explored and improved. Further clarify
At present, there are some problems in the field emission performance of aligned carbon nanotube arrays: (1) Although considerable emission current density has been reported in the literature, it is usually obtained on a small emission area, and the total emission current is small, while the field emission Microwave-emitting devices and field-emission X-ray sources require tens or even more than 100 milliamperes of current to be provided from an emission area of ​​several square millimeters, so the emission performance of the current carbon nanotube array cannot meet the device requirements; (2) emission There are serious problems in stability and uniformity, which limit its application in field emission devices; (3) The triode structure carbon nanotube array technology is still in its infancy, the process level and emission performance need to be improved, and the new emitter structure still needs to be improved. be further developed
[0007] Most of the research work on controlling field emission through field effect transistors reported in the current literature and patents is aimed at field emission displays, focusing on the control of the emission stability and uniformity of a single field emission display pixel, but the emission current cannot be improved accordingly

Method used

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  • CNT (carbon nano tube) field emission array with current limiting transistors and preparation thereof
  • CNT (carbon nano tube) field emission array with current limiting transistors and preparation thereof
  • CNT (carbon nano tube) field emission array with current limiting transistors and preparation thereof

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Experimental program
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Effect test

Embodiment

[0040] Embodiment: The process of preparing a carbon nanotube array with a flow-limiting field effect tube based on an SOI substrate is as follows:

[0041] (1) Firstly, the SOI substrate was ultrasonically cleaned in acetone and IPA for two minutes, and then PMMA electron beam photoresist was spin-coated on the substrate, followed by electron beam lithography, and the photolithographic pattern was a dot with a diameter of 100nm.

[0042] (2) Develop the substrate sample that has been subjected to electron beam lithography (such as placing it in MIBK for development), so that a photoresist mask with a circular hole pattern is formed on the surface of the substrate.

[0043] (3) The magnetron sputtering method is used to sputter the catalyst layer on the surface of the sample, which is composed of two layers of films. The lower layer is an ITO film with a thickness of 20nm; the upper layer is a nickel (Nickel) film with a thickness of 7nm.

[0044] (4) Next, the sample was immers...

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Abstract

A CNT (carbon nano tube) field emission array with current limiting transistors comprises a cathode, a gate below the cathode, an insulating layer between the cathode and the gate and a semiconductor layer, wherein a conductive substrate is used as the gate; the insulating layer is arranged on the conductive substrate, a semiconductor film is arranged on the insulating layer; a grid-shaped or annular metal electrode which is used as the cathode is arranged on the semiconductor film; the central position of a grid-shaped or annular hole of the grid-shaped or annular metal electrode is provided with a single CNT which grows perpendicular to the substrate; one end of the CNT is electrically connected with the semiconductor layer, and the CNT is electrically connected with the cathode through the semiconductor layer; and CNT field emission elements with the current limiting transistors arrayed in a plane can form a field emission array, and the electrode is a grid-shaped metal electrode. In the invention, each CNT in the CNT field emission array is connected with a current limiting transistor in series, thus an emission element with the large emission current density and the high emission stability can be obtained.

Description

technical field [0001] The invention relates to a field emission element and a preparation method, in particular to a field emission cathode preparation method. Background technique [0002] Carbon nanotubes are one of the main materials for field emission research at present, and have very bright prospects. All major scientific research institutions in the world are actively working hard to realize the practical application and industrialization of carbon nanotubes in field emission devices. In the current research field of carbon nanotubes and related fields, new structures, materials and process methods are still being explored. On the other hand, there are already dozens of emission materials and device structures. Exploring the working mechanism of these nanotube material cold cathodes and fully exploring and utilizing the potential performance of existing device structures are still very important research contents. [0003] In the preparation of large current densi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J1/304H01J9/02
Inventor 张研李驰
Owner 上海康众光电科技有限公司
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